DIODE 6A 250V Search Results

Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFP12N50PM RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings

IXTP12N50PM

Abstract: 12n50p d1518
Contextual Info: PolarTM Power MOSFET IXTP12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings

IXTP12N50PM

Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTP12N50PM RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings

IXFP12N50PM

Abstract: T12N50 IXFP12N50 12n50 41408
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFP12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings

PT570LC4

Abstract: 74118 2500VRMS 3000VA E214025 EN60947-4-1 relays schrack relay 17a 12v PT570730 miniature 12v relay schrack
Contextual Info: General Purpose Relays Industrial Relays Schrack Miniature Relay PT n 2 pole 12A, 3 pole 10A or 4 pole 6A, 2, 3 or 4 form C CO contacts or AC coil n Switching performance up to 3000VA n Relay height 29mm n Mechanical indicator, optional LED and protection diode

bUTTON PCB

Abstract: relay 17a 12v 74118 diode marking code 777 10A250VAC PT580024
Contextual Info: General Purpose Relays Industrial Relays SCHRACK Miniature Relay PT n 2 pole 12A, 3 pole 10A or 4 pole 6A, 2, 3 or 4 form C CO contacts or AC coil n Switching performance up to 3000VA n Relay height 29mm n Mechanical indicator, optional LED and protection diode

1E14

Abstract: 2E12 FSS234R4 JANSR2N7401 relay 12v 300 ohm
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 File Number 4571 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli­

2SK2099-01L

Abstract: MOSFET 3a 250v
Contextual Info: 2SK2099-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 0,85Ω 6A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2099-01L

Contextual Info: 2SK2099-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 0,85Ω 6A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,

Contextual Info: 2SK2099-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 0,85Ω 6A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

STP6NS25

Abstract: STP6N
Contextual Info: STP6NS25 N-CHANNEL 250V - 0.9Ω - 6A TO-220 MESH OVERLAY MOSFET TYPE STP6NS25 • ■ ■ VDSS RDS on ID 250 V < 1.1 Ω 6A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™

Contextual Info: JANSR2N7401 January 2002 Formerly FSS234R4 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: STP6NS25 N-CHANNEL 250V - 0.9Ω - 6A TO-220 MESH OVERLAY MOSFET TYPE STP6NS25 • ■ ■ VDSS RDS on ID 250 V < 1.1 Ω 6A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY

Rad hard MOSFETS in Harris

Abstract: MIL-S-19500 1E14 2E12 FSS234D FSS234R fss234
Contextual Info: S E M I C O N D U C T O R FSS234D, FSS234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 6A, 250V, rDS ON = 0.600Ω • Total Dose - Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

6N25

Abstract: TO252-DPAK FDD6N25TM
Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

STP6NS25

Abstract: S355
Contextual Info: STP6NS25 N-CHANNEL 250V - 0.9Ω - 6A TO-220 MESH OVERLAY MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STP6NS25 250 V < 1.1 Ω 6A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 DESCRIPTION Using the latest high voltage MESH OVERLAY

1E14

Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

irfs654a

Abstract: VM-50V
Contextual Info: IRFS654A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VOS= 250V

Contextual Info: STP6NB25 STP6NB25FP N-CHANNEL 250V - 0.9Ω - 6A TO-220/TO-220FP PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP6NB25 250 V < 1.1 Ω 6A STP6NB25FP 250 V < 1.1 Ω 3.7 A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED