DIODE 6A 250V Search Results

PT570LC4

Abstract: 74118 2500VRMS 3000VA E214025 EN60947-4-1 relays schrack relay 17a 12v PT570730 miniature 12v relay schrack
Contextual Info: General Purpose Relays Industrial Relays Schrack Miniature Relay PT n 2 pole 12A, 3 pole 10A or 4 pole 6A, 2, 3 or 4 form C CO contacts or AC coil n Switching performance up to 3000VA n Relay height 29mm n Mechanical indicator, optional LED and protection diode

2SK2099-01L

Contextual Info: 2SK2099-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 0,85Ω 6A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,

Contextual Info: 2SK2099-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 0,85Ω 6A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

STP6NS25

Abstract: STP6N
Contextual Info: STP6NS25 N-CHANNEL 250V - 0.9Ω - 6A TO-220 MESH OVERLAY MOSFET TYPE STP6NS25 • ■ ■ VDSS RDS on ID 250 V < 1.1 Ω 6A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™

FDD6N25TM

Abstract: FDD6N25 FDD6N25TF FDU6N25
Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Rad hard MOSFETS in Harris

Abstract: MIL-S-19500 1E14 2E12 FSS234D FSS234R fss234
Contextual Info: S E M I C O N D U C T O R FSS234D, FSS234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 6A, 250V, rDS ON = 0.600Ω • Total Dose - Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

STP6NS25

Abstract: S355
Contextual Info: STP6NS25 N-CHANNEL 250V - 0.9Ω - 6A TO-220 MESH OVERLAY MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STP6NS25 250 V < 1.1 Ω 6A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 DESCRIPTION Using the latest high voltage MESH OVERLAY

FS12VS-5

Contextual Info: MITSUBISHI Nch POWER MOSFET FS12VS-5 HIGH-SPEED SWITCHING USE FS12VS-5 OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. +0.3 –0 1.5 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 250V

L03A

Contextual Info: FU JI stuMoruajK 2SK2099-01L,S FAP-IIA Series > Features - N-channel MOS-FET 250V 0,85Q 6A ' 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications

12V ENERGY LIGHT CIRCUIT DIAGRAM

Abstract: STRH10N25ESY3
Contextual Info: STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH10N25ESY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

sd 7401

Abstract: T0257
Contextual Info: JA N SR 2N 7401 É S 1 H A R R I S S E M I C O N D U C T O R Formerly FSS234R4 August 1998 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 5 0 V , rQg ONi = 0.600J2 has d evelo p ed a s e ries of R adiation H a rd e n e d M O S F E T s for com m ercial

2SK2099-01L

Abstract: Collmer SC l03a
Contextual Info: F U JI 2SK2099-01 L,S N-channel MOS-FET 250V 0,85D 6A 20W FA P -IIA Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications -

FS12KM

Abstract: FS12KM-5
Contextual Info: MITSUBISHI Neh POWER MOSFET FS12KM-5 HIGH-SPEED SWITCHING USE FS12KM-5 OUTLINE DRAWING • V dss . Dimensions in mm 250V 0.40Q • rDS ON (MAX) . • I d . 12A

A 3120V

Abstract: 205-3CC-DM-1 m7 diode 205-2CC-DM-3 205-3CC-DM-3 dm 0256 3120v led diode song chuan e419
Contextual Info: 205 SONG CHUAN Features □ DPDT ; TPDT General Purpose Power Relay. □ DC / AC Coil. □ Single or Twin contacts with / without gold plated. □ With position indicator, manual override and override level. □ Optional LED and protection diode. □ Comply with RoHS-Directive 2002/95/EC.

1E14

Abstract: 2E12 FRS244D FRS244H FRS244R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS244D, FRS244R, FRS244H 9A, 250V, 0.415 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 250V, RDS on = 0.415Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: STP6NB25 STP6NB25FP N - CHANNEL 250V - 0.9Ω - 6A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE STP6NB25 STP6NB25FP • ■ ■ ■ ■ V DSS R DS on ID 250 V 250 V < 1.1 Ω < 1.1 Ω 6A 3.7 A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: FSS234D, FSS234R Semiconductor 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 6A, 250V, ros ON = 0-600£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A • Low gate charge ( Typ. 15nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

5 pin relay 12vdc

Abstract: UF3-230VAC1 5 pin relay 12vdc 250VAC kuhnke relay UF3 24vdc kuhnke relay 24vdc Relays with single Changeover kuhnke uf3 24VDC relay UF3-230VAC relay SPCO 12V coil UF3-24VDC1
Contextual Info: Relays - Plug in TYCO SCHRACK The XT series relays are a new generation of plug in relays featuring a clear case and extra strong pins for greater mechanical strength. Also features a manual test lever as standard and a sensitive 400mW coil with built in led indication and suppression diode. Suitable for RT series

FDD6N50

Contextual Info: FDD6N50TM_F085 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)

NTE2990

Abstract: Power MOSFET P-Channel 250V 50A
Contextual Info: NTE2990 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Low Drain−Source On−Resistance D Low Input Capacitance D High Avalanche Capability Ratings Applications: D Switching Regulators D UPS D DC−DC Converters D General Purpose Power Amplifier