FDU6N25 Search Results

FDU6N25 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDU6N25		Fairchild Semiconductor	250V N-Channel MOSFET	Original	PDF	689.91KB	9
FDU6N25		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 4.4A IPAK-3	Original	PDF		8

FDU6N25 Price and Stock

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onsemi FDU6N25 MOSFET N-CH 250V 4.4A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDU6N25	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	FDU6N25	Tube			3,847	1 - 10 - 100 - 1000 - 10000 $0.26	Buy Now
Verical ()	FDU6N25		110,880		1,244	1 - 10 - 100 - 1000 - 10000 $0.27	Buy Now
	FDU6N25		4,464		1,244	1 - 10 - 100 - 1000 - 10000 $0.30	Buy Now
	FDU6N25		3,822		1,244	1 - 10 - 100 - 1000 - 10000 $0.30	Buy Now
	FDU6N25		2,130		1,244	1 - 10 - 100 - 1000 - 10000 $0.30	Buy Now
Rochester Electronics	FDU6N25		11,072		1	1 - 10 - 100 $0.29 1000 $0.24 10000 $0.21	Buy Now
Flip Electronics	FDU6N25		30,757			1 - 10 - 100 - 1000 - 10000 -	Get Quote
FLIP ELECTRONICS FDU6N25 MOSFET N-CH 250V 4.4A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDU6N25	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $0.20	Buy Now
Fairchild Semiconductor Corporation FDU6N25 Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FDU6N25		117,474		1	1 - 10 - 100 $0.29 1000 $0.24 10000 $0.21	Buy Now

FDU6N25 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDU6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features Description • RDS on = 0.9 Ω (Typ.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	FDU6N25	PDF
6N25 Abstract: TO252-DPAK FDD6N25TM Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDD6N25 FDU6N25 FDU6N25 FDD6N25TF FDD6N25TM 6N25 TO252-DPAK	PDF
Contextual Info: FDU6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1  Features Description • RDS on = 1.1  (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	FDU6N25	PDF
FDD6N25TM Abstract: FDD6N25 FDD6N25TF FDU6N25 Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDD6N25 FDU6N25 FDD6N25TM FDD6N25TF FDU6N25	PDF
Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDD6N25 FDU6N25	PDF