DIODE 47-6 H1 Search Results

50-12P1

Contextual Info: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18

17434

Abstract: 343 "cross-reference" opto cross reference 4n35f 4n26f 94766 H11A1 "cross reference" 4N25M H11A4 4N35M
Contextual Info: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 WHITE PACKAGE -M SUFFIX 4N35 H11A4 4N36 H11A5 SCHEMATIC 6 1 4N28 H11A3 1 6 2 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 BLACK PACKAGE (NO -M SUFFIX)

H11AV2

Abstract: H11AV1A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

4N37 "cross reference"

Abstract: TD 6pin 4N35M
Contextual Info: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 WHITE PACKAGE -M SUFFIX 4N35 H11A4 4N36 H11A5 SCHEMATIC 6 1 4N28 H11A3 1 6 2 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 BLACK PACKAGE (NO -M SUFFIX)

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

H11BX522

Abstract: 2500VPEAK 2MTC
Contextual Info: 1 •»$ .*/> G E N E R A I ELECTRIC Photon Coupled Isolator H11BX522 Ga As Solid State Lamp & NPN Silicon Photo-Darlington Amplifier The G eneral E lectric H 11B X 522 is a gallium arsenide, infrared em itting diode coupled w ith a silicon photo-d arlin g to n am plifier

2D21

Abstract: 74ABT16273
Contextual Info: INTEGRATED CIRCUITS 74ABT16273 16-bit D-type flip-flop Product data Replaces data sheet 74ABT/H16273 of 1998 Feb 27 Philips Semiconductors 2004 Feb 12 Philips Semiconductors Product data 16-bit D-type flip-flop 74ABT16273 FEATURES DESCRIPTION • 16-bit D-type edge triggered flip-flops

h11n1 "cross-reference"

Abstract: H11N1M
Contextual Info: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC ANODE 1 6 VCC 6 6 CATHODE 2 5 GND 1 1 3 4 VO 6 1 DESCRIPTION The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode.

fairchild 1011 opto

Abstract: cj 6PIN H11L1SR2M H11L1M
Contextual Info: 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT H11L1M H11L2M H11L3M DESCRIPTION The H11LX series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and

H11D3

Abstract: RBE1
Contextual Info: H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V

H11D3

Abstract: DSA0011162
Contextual Info: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage

H11D3

Abstract: OPTO H11D1
Contextual Info: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage

H11D1

Abstract: H11D3 h11d3-d4 H11D12
Contextual Info: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage

UC320

Abstract: CIRCUIT diagram welding inverter diode K14
Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state

Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coeficient of the on-state

transistor model h1a

Abstract: IRGS4045D irgs4045 JESD-47 lm 230 wf1 JESD47F
Contextual Info: IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC  6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C C E G VCE on typ.  1.7V G D2-Pak IRGS4045DPbF E n-channel Applications • Appliance Motor Drive  Inverters

a4n33

Abstract: H11B255 H13A2 H11C1 photo interrupter module photo interrupter module h13a1 4N38 4N38A H11A10 H11AA1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100

H11L1M

Contextual Info: 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT H11L1M H11L2M H11L3M DESCRIPTION The H11LX series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and

Contextual Info: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVcer Voltage Optocoupler FEATURES Dimensions in inches mm • CTR at / F=1 O m A, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Em itter Breakdown Voltage

DIODE marking 78A

Abstract: FTR-K1
Contextual Info: FTR-K1 SERIES SILENT POWER RELAY 1 POLE - 78A/120A Inrush Current Type FTR-H3 Series n FEATURES Pin compatible with widely used VS and FTR-H1 series power relays l Silent relay with patented unique U-shape spring. Noise level ≈ 50dB at 5cm. l Low profile height 18.8 mm / cadmium free contacts

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

BZX88C15

Abstract: BZX88-C11 diode l2 32 diode BAW65 f021 Z6 DIODE 2N929 2N930 BAW63 BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors T yp e Device marking Nearest m etal can or IE-line equivalent B .S . num ber* Page

the light activated scr

Abstract: H11B255 photo interrupter module h13a1 GE SCR 1000 H11C1 H11C2 4N38 4N38A H11A10 H11AA1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 ID nA MAX. BVceo (VOLTS) MIN. 50 30 I I 100 200 30 30 20'ä I 20% 20% 10% 100 100 100 100 50 50 300 300 100 100 100 100 100 100