DIODE 43B Search Results

Contextual Info: DISC T Y P E DIODE SDF4000BA SD F4000BA rectification. is a Flat Pack Diode designed for high power • If av>— 4000A, Vrrm— 1200V • High Reliability by pressure mount construction. (Applications • High Power Rectifier • Welding Power Supply • Maximum Ratings

S370

Contextual Info: VISIB LE LIG HT PRODUCTS Super Bluish-Green Light Emitting Diode REV:B DATE:2006/8/30 iDEVICE NO:HMIB-43B/TR7 " LENS COLOR: colored diffusion colored transparent white diffusion water clear iPACKAGE DIMENSIONS: 2.25 1.1 0.83 m 2 .^ 5 ^ cathode stripe 3.Tolerance is 0.3mm unless otherwise

zener 27b

Abstract: 27B zener diode 22b zener diode 43B MARKING 20B zener diode zener diode 33B
Contextual Info: Diodes Zener Diode for Constant Voltage Control UDZ Series •Features •External dimensions Units: mm 1)Extremely compact, 2-pin mini-mold type for highdensity mounting (UMD2) 2)High reliability 3)Can be mounted automatically, using chip mounter CATHODE MARK

skiip 613 gb

Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Contextual Info: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

1SMB3EZ11

Abstract: 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200
Contextual Info: 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l Glass passivated junction

skiip 613 gb

Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Contextual Info: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

b698 transistor

Abstract: B698 30PF DS3893A DS3893AV V20A
Contextual Info: DS3893A £3i National Semiconductor ü DS3893A BTL TURBOTRANSCEIVER General Description The bus driver is an open collector NPN with a Schottky diode in series to isolate the transistor output capacitance from the bus when the driver is in the inactive state. The

338 zener

Abstract: diode zener ZL 7 ZENER DIODES DZ 6.28 diode zener ZL 8 15B zener diode udz diode
Contextual Info: I 2-pin Mini-mold Zener Diode UDZS Series l External dimensions Units: mm @Application Constant voltage control CA1 tiODF MAI<K @Features I1 l)Extremely compact 2-pin mrnr-mold type for highdensity mounting (UMD2 (USM) ). 2)Due to a wireless structure surge proof

zener zp 278

Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
Contextual Info: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20

GV 475 diode

Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode
Contextual Info: TRANSYS ELECTRONICS LIMITED 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 W atts FEATURES For surface mounted app cations in order to DO-214AA optimize board space MODIFIED J-BEND Low prof e package Built-in strain re ef

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

10DF1

Abstract: 10DF2 n439
Contextual Info: FAST RECOVERY DIODE 1.1A/100— 200V/trr : 200nsec 10DF1 10DF2 FEATURES ° Miniature Size 2.71.106 DIA 2.3 .091) -GO ° Super Fast Recovery » Low Forward Voltage Drop 0.9(.035) n r * 0.7Î.027) o Low Power Loss, High Efficiency 27(1.06) MIN ° High Surge Capability

43B diode

Abstract: Q002 FCH10A04 S7045 g3il
Contextual Info: SCHOTTKY BARRIER DIODE FCH10A04 i o a /4q v FEATU RES o Similar to T0-220AB Case OFully Molded Isolation ODual Diodes-Cathode Common OLow Foward Voltage Drop oL ow Power Loss, High Efficiency o High Surge Capability OTj = 150°C operation Approx. N et W eight: 1.75 Grams

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

D403 power transistor

Abstract: D403 transistor TRANSISTOR D403 D403 A 2SB1344 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor
Contextual Info: 2SB1344 2SD2025 Transistors I Power Transistor —100V, —8A 2SB1344 •A b s o lu te maximum ratings (Ta—25‘C ) •F e a tu re s 1) 2) 3) 4) Darlington connection fo r high D C current gain. Built-in resistor between base and emitter. Built-in dam per diode.

Contextual Info: SCHOTTKY BARRIER DIODE F C H1 0 A 0 4 1 0A /4 0V FEATU RES o Similar to TO-220AB Case OFully Molded Isolation ODual Diodes-Cathode Common OLow Foward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability OTj = 150°C operation Approx. Net Weight : 1.75 Grams

10EF1

Abstract: 10EF2
Contextual Info: FAST RECOVERY DIODE l.lA /10 0~ 20 0V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size 2.7 .106 nlA M A X U1A « Super Fast Recovery o Low Forward Voltage Drop 0.7(.027)DIA 0.5(.020) •>Low Power Loss, High Efficiency 2 7 ( 1.0 6 ) ' M IN ° High Surge Capability

ic lm324

Abstract: laser APC CIRCUIT APC 1500 CIRCUIT DIAGRAM 16G075-2X 16G075-2L1 LM324 Gigabit Logic DIODE in s2v 16G075-2L1E 16G075-3L1
Contextual Info: IGBL I G i g a B i t L o g ic 16G075 Laser Diode Driver 3 Gbit/s NRZ Data Rate FEATURES High speed operation 2Gbps, 3 Gbps NRZ Differential ECL com patible interface Single power supply (-5.2V) 25 to 50 mA p-p modulation current 0 to 40 mA bias current Maximum bias current preset control

1016S

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l DlO d& P O W -R -B L O K M o d u le 600 Amperes/2400 Volts Description: OUTLINE DRAWING M lO T H D M 10TH D M10THD '.I TT • n LD41_ _60 Dual Diode POW-R-BLOK™ Module

F6P20F

Abstract: F6P10F C6P20F C6P10F 3a ultra fast diode
Contextual Info: FAST RECOVERY DIODE C6P10F C6P20F F6P10F F6P20F 6.6A/100— 2 0 0 V /trr : 30nsec 3.K.122 M AX FEATURES ° S i m i l a r to T 0 - 2 2 0 A B Ca se °Ful l y Mold Isolation 10.3 .405) P MAX •.81.189] MAX, w (F-Type) 6.9(.272) 6.3(.248) i 0 Dual Diodes - Cathode Common

MUR1560R

Abstract: RUR1550 RUR1560 UR1550 MUR1550
Contextual Info: H SbE D • A R R M U R 1540 M UR1550 M UR1560 IS IHAS 4 3 G 2 27 1 D G M 2 3 5 3 STT R U R 1540 RUR1550 RUR1560 ‘15A Ultrafast Diode With Soft Recovery Characteristic M ay 1991 HA RR IS S E I H C O N D SE CT OR re a iu re s X 'O P ackage -ò -n TO-220AC

Contextual Info: baHTfiS? bBE QG1SB30 bb3 • P I I T 3 M I T S U B IS H I M ITSU B ISH I BIPOLAR DIGITAL ICs M 54661P CD6TL L O G IC 4 -U N IT HIGH VOLTAGE 1.5A DARLINGTON T R A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION TOP VIEW) T h e M 5 4 6 6 1 P , 4 -c h a n n e l sink driver, consists of 4 P N P and

Contextual Info: SIE D • fllBbb71 0DG3S74 43b « S E K G s e MIKRD n SEMIKRÖN INC I Absolute Maximum Ratings Symbol V ds V dgr Id Id m V gs Pd Tji Tstg Visol humidity climate Conditions ' R g s = 20 k i l AC, 1 min, 200 |iA DIN 40 040 DIN IEC 68 T.1 Units ; Values 100 100

FLUKE 43 manual

Abstract: FLUKE 43B PM9080 PM9087 fluke bp120 epson printer pm 235 deskjet printer troubleshoot guide FLUKE 43b manual c789 BB120
Contextual Info: Fluke 43B Power Quality Analyzer Maintain power systems, troubleshoot power problems, diagnose equipment failures The Fluke 43 Power Quality Analyzer performs the measurements you need to maintain power systems, troubleshoot power problems and diagnose equipment failures. All in a rugged