1SMB3EZ15 Search Results
1SMB3EZ15 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 1SMB3EZ15 | PanJit Semiconductors | SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) | Original | 129.88KB | 5 | ||
| 1SMB3EZ15 | Transys Electronics | SURFACE MOUNT SILICON ZENER DIODE | Scan | 379.99KB | 5 | ||
| 1SMB3EZ150 | PanJit Semiconductors | SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) | Original | 129.88KB | 5 | ||
| 1SMB3EZ150 | Transys Electronics | SURFACE MOUNT SILICON ZENER DIODE | Scan | 379.99KB | 5 | ||
| 1SMB3EZ15-AU_R1_000A1 | Panjit International | GLASS PASSIVATED JUNCTION SILICO | Original | 193.19KB | 6 | ||
1SMB3EZ15
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SUNMATE electronic Co., LTD | Surface mount silicon Zener diode in SMB/DO-214AA package with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon zener diode in SMB package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, junction temperature from -55 to +175°C, reverse leakage current up to 80µA.Surface mount silicon zener diode in SMB package with 3.0W power dissipation, voltage range from 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon Zener diode in SMB/DO-214AA package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, maximum forward voltage 1.5V, junction temperature range -55 to +175°C.Surface mount silicon Zener diodes in SMB package with 3.0W power dissipation, voltage range from 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon Zener diode in SMB package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, junction temperature from -55 to +175°C, reverse leakage current as low as 0.5µA. | Original | ||||
1SMB3EZ150
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SUNMATE electronic Co., LTD | Surface mount silicon Zener diode in SMB/DO-214AA package with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon zener diode in SMB package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, junction temperature from -55 to +175°C, reverse leakage current up to 80µA.Surface mount silicon zener diode in SMB package with 3.0W power dissipation, voltage range from 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA. | Original |
1SMB3EZ15 Price and Stock
PanJit Group 1SMB3EZ15_R1_00001DIODE ZENER 15V 3W DO214AA |
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1SMB3EZ15_R1_00001 | Cut Tape | 688 | 1 |
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PanJit Group 1SMB3EZ15-AU_R1_000A1DIODE ZENER 15V 3W DO214AA |
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1SMB3EZ15-AU_R1_000A1 | Cut Tape | 678 | 1 |
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PanJit Semiconductor 1SMB3EZ15_R1_00001Zener Diodes 3000mW,ZENER,SMB,15V |
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1SMB3EZ15_R1_00001 |
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1SMB3EZ15_R1_00001 | 1 |
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PanJit Semiconductor 1SMB3EZ15-AU_R1_000A1Zener Diodes 3000mW,ZENER,SMB,15V |
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1SMB3EZ15-AU_R1_000A1 |
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1SMB3EZ15-AU_R1_000A1 | 1 |
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1SMB3EZ15-AU_R1_000A1 | 18 Weeks | 800 |
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PanJit Semiconductor 1SMB3EZ15_R3_00001Zener Diodes 3000mW ZENER 15V |
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1SMB3EZ15_R3_00001 |
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1SMB3EZ15 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance |
Original |
TS16949 AECQ101 2002/95/EC DO-214AA, 2012-REV | |
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Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance |
Original |
TS16949 AEC-Q101 2011/65/EU IEC61249 2012-REV | |
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Contextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability |
Original |
DO-214AA, MIL-STD-750, 2002/95/EC 2012-REV | |
marking 43b
Abstract: E1A-481
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Original |
2002/95/EC DO-214AA, MIL-STD-750, 2012-REV marking 43b E1A-481 | |
zener 3.082
Abstract: 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB
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Original |
1SMB3EZ100 SMB/DO-214AA DO-214AA, MIL-STD-750, zener 3.082 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB | |
1SMB3EZ11
Abstract: 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200
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Original |
1SMB3EZ11 1SMB3EZ200 DO-214AA DO-214AA, MIL-STD-750, 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200 | |
TSP160C
Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
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50Amp 80Amp 100Amp 375x360x390/390x240x420 375x360x390 O-252 TSP160C ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C | |
smb 347
Abstract: SMB MARKING 60 80
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1SMB3EZ11 1SMB3EZ39 SMB/DO-214AA SMB/DO-214AA, smb 347 SMB MARKING 60 80 | |
E1A-481Contextual Info: 1SMB3EZ5.6 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 5.6 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O |
Original |
2002/95/EC DO-214AA, MIL-STD-750, 2011-REV E1A-481 | |
1SMB3EZ10
Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ51 ZENER DIODE 5.1B e1a481 E1A-481
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1SMB3EZ51 2002/95/EC DO-214AA, MIL-STD-750, E1A-481) 1SMB3EZ10 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ51 ZENER DIODE 5.1B e1a481 E1A-481 | |
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Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance |
Original |
TS16949 AEC-Q101 2002/95/EC 2012-REV | |
zener 4.7v
Abstract: E1A-481
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Original |
2002/95/EC DO-214AA, MIL-STD-750, 2012-REV zener 4.7v E1A-481 | |
8v2bContextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability |
Original |
2002/95/EC DO-214AA, MIL-STD-750, 2012-REV 8v2b | |
GV 475 diode
Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode
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OCR Scan |
1SMB3EZ11 1SMB3EZ200 0J/10 DO-214AA, MIL-STD-750, GV 475 diode 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode | |
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