DIODE 4151 Search Results

LL4151

Contextual Info: 1N 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data Case: DO-34, DO-35 Glass Case

MINI-MELF DIODE BLACK CATHODE

Abstract: 1N4151 651 diode
Contextual Info: L L 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the DO-35 case with the type designation 1N4151.

Contextual Info: 1N 4151 Small-Signal Diode Fast Switching Rectifier Features ‹ Silicon Epitaxial Planar Diode ‹ Fast switching diode ‹ This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data ‹ Case: DO-35 Glass Case

Contextual Info: L L 4151 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 75V Forward Current 150mA Features ‹ Silicon Epitaxial Planar Diode ‹ Fast switching diode in MiniMELF case especially suited for automatic insertion. ‹ This diode is also available in other case styles including the

fr diode 205

Abstract: diode fr 207 TFK 450 B2 41880 A751
Contextual Info: 1N 41510 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Besondere Merkmale: • Kann als gütebestätigtes Bauelem ent g e lie fe rt werden Features: • Can be de live re d as "Q ualified semico n d ucto r d e v ic e “

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

1N4151

Abstract: DIODE WITH SOD CASE
Contextual Info: 1N4151, 1N4151W Silicon E pitax ial P la n a r Diode fast switching diode. Packages - DO-35 1N4151 - SOD-123 (ÌN 4I51W ) -Cathode Mark max. 00,52 DO-35 G lass Case Weight approx. 0.13 g Dimensions in mm ''I e min. 0.25 SOD-123 P lastic P ackage Weight approx. 0.01 g

BAW 76 b

Abstract: BAW76
Contextual Info: BAW76 Silicon planar logical diode BAW 76 is a silicon planar diode in "d o u b le heat s in k " technique in a case 56 A 2 DIN 41 883 D O -3 5 . The cathode is marked by a blue co lo u r ring. B AW 76 is particularly suitable fo r use as high-speed sw itch in com puters as w e ll as fo r general

IN 4151

Abstract: DIODE 4151 41880
Contextual Info: E G CORP 17E D 002^421= ODG'iô'iB 4 1 N 4151 IfM e le c t ro n ic CreativeTechnologies TTdLO T -d S -O f Silicon Epitaxial Planar Diode Applications: Extreme fast switches Features: • • Also available as „Qualified semiconductor device" according to :

CM05B

Abstract: D65084 1N78 1N5764 1N5764MR C65101
Contextual Info: MIL-s-19500&l EL 19November 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE,GALLIUM ARSENIDE, MIXER TYPE1N5764, and 1N5764MR 1N5764M , . 1. ScOPE 1.1Scope.Thisspecification covers thedetailrequirements forGal!iumArsenide, Luw Barrier, HighSee:itivity,

AEG AKTIENGESELLSCHAFT

Abstract: ir 0588 LL41 LL4151 aeg diode
Contextual Info: i E G CORP 17E D O O S ^ S b G OÜTATB T LL4151 ìTtKUilFMKllKl electronic Creative Technologies Silicon Epitaxial Planar Diode Application: Extreme fast switches Features: • Electrical data identical with the device 1N 4151 D im e n sio n s in m m Terminals are tin plated

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

D45H11 equivalent replacement

Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS

MJ3001 equivalent

Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS

2sC144

Abstract: lc 3101 ST BDW83C BUX98A BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for

motorola 415 D2PAK

Abstract: 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

2SC1943

Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

pin configuration transistor bd140

Abstract: TRANSISTOR REPLACEMENT GUIDE BU108 Drive IC 2SC3346 Replacement MOTOROLA BDX54 2sA671 transistor BU326 BU100 transistor NSD134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

Contextual Info: Te m ic LS4151 T ELEFUN K EN Sem iconductors Silicon Epitaxial Planar Diode Features • E lectrical data id en tical w ith the d e v ic e 1N 4151 • Q uadro M e lf pack age Applications E xtrem e fast sw itc h e s I Absolute M axim um Ratings T, = 2 5 ° C

In5062

Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
Contextual Info: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149

PYF08A-E

Abstract: PY14QN2-Y1 112467UG MY4N-CR OMRON PYF-08A-N PY08-02 PYF08A PYF14A-E relay my4n omron PY14
Contextual Info: General-purpose Relay MY New model Versatile and Function-filled Miniature Power Relay for Sequence Control and Power Switching Applications Many variations possible through a selection of operation indicators mechanical and LED indicators , test button, built-in diode and CR (surge

MY4N-CR

Abstract: MY4N-D2 OMRON MY2 220/240VaC OMRON MY2 220 MY2IN MY4N OMRON MY4 relay my2n omron omron relay my4 110/120 vac MY2N
Contextual Info: General-purpose Relay MY New model Versatile and Function-filled Miniature Power Relay for Sequence Control and Power Switching Applications Many variations possible through a selection of operation indicators mechanical and LED indicators , test button, built-in diode and CR (surge

Contextual Info: Ordering number : EN*A2326 PCP1405 Advance Information http://onsemi.com N-Channel Power MOSFET 250V, 0.6A, 6.5Ω, Single PCP Features • On-resistance RDS on 1=5Ω(typ.) • 2.5V drive • Protection diode in • Halogen free compliance Specifications