DIODE 2R Search Results

IDG 600

Abstract: M61880FP 20P2N-A M61880
Contextual Info: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.

thyristor code

Abstract: 1KHZ thyristor thyristor h 250 tb 15 R216CH12FJO Anti-Parallel Thyristor
Contextual Info: lllfESTCODE SEMICONDUCTORS * Isolated Base Power Modules Available as DOUBLE THYRISTOR, THYRISTOR/DIODE, DIODE/THYRISTOR, DOUBLE DIODE. Features compression mounted ceramic units ensuring hermeticity. Isolation 2.5KV RMS using non-hazaidous materials. Integral water cooled unit available.

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

laserdiode application

Abstract: laserdiode and Application Note, Data S circuit diagram APC rs 1200 laserdiode driver 20P2N-A M61880FP wiring a 10 pin laser n type laser diode driver laser printer circuit diagram mitsubishi laserdiode
Contextual Info: MITSUBISHI < DIGITAL ASSP > M61880FP Laser-diode driver / controller DESCRIPTION The M61880FP is a semiconductor laser-diode driver/ controller. Its functions are the driving and laser power control of a specific type Mitsubishi's N-type laser of semiconductor laser diode,in which the anode of a

Contextual Info: SMD Zener Diode CZRSC55C2V0-G Thru CZRSC55C36-G Voltage: 2.0 to 36 Volts Power: 0.5 Watts RoHS Device Features 0805 - This diode is also available in other case styles including the 1206 case with the type designation. - Sillcon Planar Power Zener Diode. 0.086 2.20

Y234

Abstract: newave power 2RI100E ZS1000
Contextual Info: _ _ _ 2-Pack Diode 2R110OE-060/080 '“ S T POWER DIODE MODULE Features • All the term inals and the m ounting plate are electrically isolated. These modules can be Installed in the same cooling fin as other modules, thus saving installation space - a cost-effective feature.

Contextual Info: ¿CM A dvanced po w er Te c h n o l o g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT60D120B 1200V 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES Anti-Parallel Diode -Switchmode Power Supply -Inverters 1Free Wheeling Diode

Contextual Info: MITSUBISHI DIGITAL ASSP M66512P/FP LASER-DIODE DRIVER DESCRIPTION The M66512 is a semiconductor laser-diode driver for driving a specific type* of semiconductor laser, in which the anode of a semiconductor laser diode is connected in stem structure to the cathode of a monitoring photodiode.

Contextual Info: MITSUBISHI DIGITAL ASSP M66512P/FP LASER-DIODE DRIVER DESCRIPTION The M66512 is a semiconductor laser-diode driver for driving a specific type* of semiconductor laser, in which the anode of a semiconductor laser diode is connected in stem structure to the cathode of a monitoring photodiode.

R604A

Abstract: R606A 2RI60E-060 R605A
Contextual Info: DIODE MODULES Ratings and Specifications H 600 volts class general use diode modules/E series V 8RI30E-060 6RI50E-060 fcftttæ-oeo 6RnooE-oeo 6RM50E-Û60 2RI60E-060 2RI100E-060 2RI150E-060 2RI250E-060 * rrm V r sm Volts Volts 600 600 600 660 660 lo Amps. Package

ML4403R

Abstract: ML4403 "Laser Power Meter" laserdiode and Application Note, Data S MO-90 laser power meter laserdiode driver laser driver circuit M66510P M66510
Contextual Info: MITSUBISHI MITSUBISHI 〈DIGITAL 〈DIGITAL ASSP〉 ASSP〉 M66510P/FP M66510P/FP LASER-DIODE DRIVER LASER-DIODE DRIVER DESCRIPTION The M66510 is a semiconductor laser diode driver that drives a semiconductor laser of the type whose cathode and the anode of monitor photodiode are connected to the stem.

Design With PIN Diodes

Contextual Info: APPLICATION NOTE Design With PIN Diodes Introduction The PIN diode finds wide usage in RF, UHF, and microwave circuits. At these types of frequencies, a PIN diode is fundamentally a device with an impedance controlled by its DC excitation. A unique feature of the PIN diode is its ability to control

HP8640B

Abstract: HP83595A HSMP-3880 HP11612A HP436A HSMP-3820 HSMP-3830 HSMP-3890 HP8565
Contextual Info: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled

hp11612a

Abstract: HP8640B HP8565A HP436A HP83595A HSMP-3820 Microwave PIN diode HSMP-3830 HSMP-3880 HSMP-3890
Contextual Info: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled

M66515FP

Abstract: m66515 20P2N-A Laser Diode driver making ld
Contextual Info: M66515FP Laser Diode Driver/Controller REJ03F0084-0100Z Rev.1.0 Sep.22.2003 Description The M66515 is a laser diode driver/controller that performs drive and controls the laser power control of a type of semiconductor laser diode the anode of which is connected, with the cathode of a photodiode for monitoring, to a stem

UM9441 UM9442

Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Contextual Info: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of

fuji 6000

Abstract: "Power Diode" 2RI60E-060 2RI60E DIODE 255 power rectifying diode
Contextual Info: 2-Pack Diode E 5 4 h T û3 D ( S 2R I60E-060/080 *S§ r ’ POWER DIODE MODULE Features • All the term inals and the m ounting plate are electrically isolated. These m odules can be installed in the same cooling fin as other m odules, thus saving installation

2RI60E

Contextual Info: 2-Pack Diode E 5 4 h T û 3 D (S 2R I60E-060/080 *S§ r ’ POWER DIODE MODULE Features • All the term inals and the m ounting plate are electrically isolated. These m odules can be installed in the same cooling fin as other m odules, thus saving installation

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

marking dp sot363

Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

2N301

Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

6RI150E-080

Abstract: 2RI60E-060 R604A R606A 6RI100g-120 6ri30g-160
Contextual Info: /\°7 —x / W ¥ ' f t — K^ v :i —it/ 7s / Power Devices r Jj£ Diode Modules 600M O v X / v a - ; u E v 'J - X 600 volts class general use diode modules E series m •£ Device type 6RI30E-060 6RI50E-060 6RI75E-060 6RI100E-060 6RI150E-060 2RI60E-060