DIODE 132 E Search Results

mcc 550 ixys

Abstract: MCC 132-16io1 IXYS MCC 550 mcc 550
Contextual Info: MCC 132 MCD 132 ITRMS = 2x 300 A ITAVM = 2x 130 A VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM Type V V Version 1 Version 1 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC 132-08io1 MCC 132-12io1 MCC 132-14io1 MCC 132-16io1

Contextual Info: 5 /a s /h *- AUT' S H ^ - h Schottky Barrier Diode OUTLINE DIMENSIONS DE10SC4 Package I E i'ivO Standard soldering pad 40 V 10 A : ±o.i Tolerance: ±0.1 •S M D 0.5±al • T jl5 0 ° C # P rrsm ^ t j y 'j I f fiti • im - x m z a m m 0.1±al m m • S R S ÎÜ

mcc 90-12

Abstract: MCC 90-16 mcc 250 thyristor abb mcc 90-12 ABB thyristor modules MCC 65 ABB mcc MCC 90-06 io 8 Thyristor mcc mcc 90-08 ABB thyristor modules
Contextual Info: A S E A BROUN/ABB SEMICON Netz-Thyristor-Module aJ- F | 00Mfl30fl ouuuiiii i l ] Phase control Thyristor-Modules T - 2 5 - 2 3 EE! Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

TOP245Y equivalent

Abstract: top247y CIRCUIT DIAGRAM TOP247Y TOP243Y smd transistor 46B VC 5022 IC TOP246 TOPSWITCH TOP249Y TOP244Y
Contextual Info: TOP242-249 TOPSwitch®-GX Family Extended Power, Design Flexible, EcoSmart®, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range to 250 W • Features eliminate or reduce cost of external components

APT8020JLL

Abstract: APT30DF100
Contextual Info: APT8020JLL 800V POWER MOS 7 R 33A 0.200Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

S15VT80

Contextual Info: SHINDENGEN General Purpose Rectifiers S15VT80 3 Phase Bridge Modules OUTLINE DIMENSIONS Case : SVT Unit : mm FEATURES Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION Big Power Supply

Contextual Info: HiPerFETTM Power MOSFETs IXFH 66N20Q IXFT 66N20Q VDSS ID25 RDS on Q-Class = 200 V = 66 A Ω = 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

BOD 1-18 R

Abstract: kippdiode ABB BOD 1-17 r ABB bod 1-11 bod 1.08
Contextual Info: A S E A BROÙIN/ABB Kippdiode A3 SENICON DT- I - I 3 D DDDOen DD'Mfl3Gfl 1 Diode de retournement Breakover diode Vbo • 83D 0 0 2 1 9 Ibo Id Ih vH Iavm 1 ISM 25° C Tvj = 125°C 25°C 25° C Ta 50°C Tvj = 50° c dv/dt Ts Tvj RthJA Masse Fig. masse Typ/type

S15VTA60

Contextual Info: SHINDENGEN General Purpose Rectifiers S15VTA60 3 Phase Bridge Modules OUTLINE DIMENSIONS Case : SVTA Unit : mm FEATURES Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION Big Power Supply

S4 56a SMD diode

Abstract: smd transistor 56B TOP250 TOP242-250 smd diode s6 64a transformer for top250 capacitor 336 35K 102 smd diode S4 64a TOP244 TOP243 equivalent
Contextual Info: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P/G packages

d 132 smd diode

Contextual Info: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 DF20JC10 Unit-mm Weight 1.5g Typ 10.2 100V 20A Feature • SMD • <SlR=0.7mA • SMD • S iy R T È Î E iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG

FSJ260

Abstract: MIL-S-19500 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 ta1766
Contextual Info: S E M I C O N D U C T O R FSJ260D, FSJ260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: Super Fast Recovery Diode Twin Diode Wtm D5LC20U OUTLINE 200V 5A Feature •m s'ix • • • L o w N oise trr=35ns 7 [Æ - J U K • trr= 3 5 n s • Full M o ld e d Main Use • S w itc h in g R eg u lator • Fly W heel • ÌM .0 A J M 3 • H om e A p p lia n c e , O ffice A u to m a tio n , Lig h tin g

Contextual Info: □IXYS MEO 500-06DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module VRSM VRRM Type Symbol N rms ' favm ^FRM TVJ = 150°C; fi^ t TVJ = 45 °C; TVJ = 150°C; P,„, Tc - 25°C V .S O L 50/60 Hz, RMS I,sol < 1 mA 726 514 2680 A A A Hz), Hz), Hz),

ap0140a

Abstract: 8 Channel Power Mosfet Array
Contextual Info: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information BVDSS/ ^D S O N (min) (max) 700n -160V -200V -300V -320V -400V 600n 600n 700Q 70 0n SI b v dgs @ ^DS -100 V Max *D SS*

PFTV07

Abstract: amphenol 77820 7000 audio JN1034 faraday formula f85 bp diode EMI gaskets for d-sub K932 MIL-DTL-83513 bendix 6 pin
Contextual Info: Table of Contents Description Page Amphenol EMI/EMP Filter Protection Connectors for Protection of Sensitive Circuits . 1 EMI Capabilities . 2, 3

8AM40

Contextual Info: CED9926/CEU9926 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 26A, RDS ON = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

TO-264-aa

Contextual Info: □ IXYS v DSS HiPerFET Power MOSFETs DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr D ^D25 Preliminary data Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C

UTT150N03

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC’s advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior

BVH-21-P1

Abstract: R15A-15 B3P5 r50a3 diode 17a 400v R15A
Contextual Info: Ordering information AC-DC Power Supplies Enclosed type R10A R R 1 10A 2 -5 3 -O 4 1Series name 2Output wattage 3Output voltage 4Optional *2 G :Low leakage current J :Connector type N :with Cover R MODEL MAX OUTPUT WATTAGE[W] DC OUTPUT R10A-3 6 3V 2.0A R10A-5

APT35GT120JU2

Contextual Info: APT35GT120JU2 ISOTOP Boost chopper Trench + Field Stop IGBT® G E K E C G ISOTOP Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF

PE1508N

Abstract: PF1508N
Contextual Info: DIODE •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT φ E 1 PE1508N PF1508N 150A Avg 800 Volts （単位 Dimension：mm） φ F 2 3 1 2 BASE 3 BASE φ ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧

RB085T-40

Contextual Info: Data Sheet Schottky barrier diode RB085T-40 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability 8 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C)

sim 900A

Contextual Info: MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of one IGBT in a single configura­ tion, with a reverse connected su­