DIODE 1-35 J2 Search Results

1100 CHIP RESISTOR NETWORK

Contextual Info: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW610B-1 Layout Features ♦ ♦ ♦ V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction

PIN diode switch

Abstract: SN62 PB36 ag2 solder preform SN62 PB36 ag2 MA4SW510B-1 MA4SW610B-1
Contextual Info: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW510B-1 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description

SN62 PB36 ag2 solder preform

Abstract: SN62 PB36 ag2 MA4SW510B-1
Contextual Info: MA4SW510B-1 SP5T PIN Diode Switch with Integrated Bias Network MA4SW510B-1 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.8 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description

IR3575

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 35 75 Vdc IF 100 mAdc

Contextual Info: MA4BN1840-2 Monolithic HMIC Integrated Bias Network Rev. V4 Features • Broad Bandwidth Specified 18 to 40 GHz  Usable 10 GHz to 50 GHz  Extremely Low Insertion Loss  High RF-DC Isolation  Rugged, Fully Monolithic Glass Encapsulation  J1 & J2 Matched to 50 Ω

Contextual Info: MA4BN1840-1 Monolithic HMIC Integrated Bias Network Rev. V4 Features • Broad Bandwidth Specified 18 to 40 GHz  Usable 10 GHz to 50 GHz  Extremely Low Insertion Loss  High RF-DC Isolation  Rugged, Fully Monolithic Glass Encapsulation  J1 & J2 Matched to 50 Ω

30V-8A

Abstract: CET453N 8a 817 voltage 67A SOT 23 6
Contextual Info: CET453N March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 8A , RDS ON =28mΩ @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. G D S D 8 S D SOT-223 S G G SOT-223 (J23Z)

BC103C

Abstract: bc 103
Contextual Info: SAMSUNG SEMICONDUCTOR INC 02 KS54HCTLS j2 ß § KS74HCTLS DE | 71b4142 □□Ob4bT S | ” Dual Pof-4 Data Selectors/Multiplexers Sele with 3-State Outputs -<3 / —y l FEATURES DESCRIPTION • • • • Each of these data selectors/multiplexers contains inverters

2SJ295

Contextual Info: 2 S J2 95 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC

CET451AN

Contextual Info: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 7.2A , RDS ON =35mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. 8 G D S D S D SOT-223 S G G SOT-223 (J23Z)

E50U

Contextual Info: FEATURES • 5 - 3 0 0 MHz ■ 3 nSec 10% / 90% RF Transition eL MODEL NO. 100C1041 « ■ 9 nSec Switching Speed Schottky Diode SPST ■ 60 dB Isolation ■ TTL Driver ■ Non-Reflective >e- J2 50 U rh +5V GND CONT. ,.r . 2 PLACES f .xx = .02 .xxx = .010

MA4SW110

Abstract: sp3t spt31 PIN Beam lead diod
Contextual Info: M an A M P com pany Monolithic PIN Diode Switches MA4SW110, MA4SW210, MA4SW310 V2.00 Features • Broad Bandw idth - S p eciied up to 20 GH z MA4SW110 J1 J2 - 0 0— W - Usable to 26 5 G H z • Low Insertion Loss/H igh Isolation • R ugged, Fu lly M onolithic, G lass En cap s u it e d

BAR14-1

Contextual Info: SIEMENS AKTIEN6ESELLSCHAF bOE H • J23Sb05 0051MaM M83 « S I E G SIEMENS -T -07-16 Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Characteristics (TA= 25° C) Maximum Ratings Type 1, V Ct pF mA V BA 585

1RF530

Abstract: 1RF531 43D5571 IRF530R CGJ-1 irf530 harris IRF530 IRF531 IRF531R IRF532
Contextual Info: • 430 2 27 1 0 0 5 3 ^ 3 J2 HARRIS 72T ■ HAS IR F 530/531/532/533 IRF530R/531R/532R/533R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features T 0 -2 2 0 A B • 12A and 14A, 80V - 100V TOP VIEW • r o s ° n = 0 .1 6f2 and 0 .2 3 0

Contextual Info: ED42_ J21 ED47_ _21_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S C R / D Í O d e IS O lS t & d POW-R-BLOK Module 210 Amperes/600-2000 Volts OUTLINE DRAWING _J T \_ Ï Ï T ED42 21, ED47 21 SCR/Diode Isolated

diode A123

Contextual Info: 2 G-1 J10 1 2 3 1 2 3 4 C4 1 2 GND 100n 3 GND MFNS1902 T11 25 R15 GND J42 J22 R16 CR C1 V5 GND 100n C11 DIODE D11 T21 MFNS1902 LED2 25 R25 GND J43 J23 R26 CG TXD RXD RTS# CTS# DTR# DSR# DCD# RI# 2 23 22 13 14 12 1 5 3 11 2 9 10 6 GND MFNS1902 T31 25 R35 J44

Modco

Abstract: ZENER DIODE J3 Zener Diode C37 DIODE SMD J9 HDR2x7 ZC41 HDR2X10 HDR2X10 SMD connector MW520 zener c26
Contextual Info: 12 13 5 5 4 3 2 1 R2E 220 4 R2D 220 3 R2C 220 2 R2B 220 1 R2A 220 1 2 14 3 15 4 16 5 +3V SW1E DIG-8 D 12 J2 CON2 EE_SEL SW1D DIG-8 13 SW1C DIG-8 15 16 SW1B DIG-8 14 SW1A DIG-8 D C5 .01uF C6 22pF C7 22pF 2 C1 3.3uF 1 +3V U1 TSSOP-24 CA1A 100pF 1 16 FR 24 GND

Contextual Info: FEATURES • 20-2000 MHz ■ 60 dB Isolation ■ 13 mA,+5 VDC ■ TTL Driver ■ Non-Reflective ■ Replaceable SMA Connectors & MODEL NO. CDS0623 PIN Diode SP3T +5V GND " 1” C1 J2 “ 0” C2 “ ST 0” C3 GND RF COMMON >* a s ö TYPICAL PERFORMANCE

Contextual Info: MCP2050 LIN Transceiver with Voltage Regulator Features • The MCP2050 is compliant with: - LIN Bus Specifications Version 1.3, and 2.x - SAE J2602-2 • Support Baud Rates Up to 20 kBaud • 43V Load Dump Protected • Maximum Continuous Input Voltage of 30V

OH MARKING diode

Contextual Info: MCP2050 LIN Transceiver with Voltage Regulator Features • The MCP2050 is compliant with: - LIN Bus Specifications Version 1.3, and 2.x - SAE J2602-2 • Support Baud Rates Up to 20 kBaud • 43V Load Dump Protected • Maximum Continuous Input Voltage of 30V

DIODE SMD J9

Abstract: Relay RL1, 5V, 100 ohm SMD R1D diode smd diode R2C y2 smd zener ZENER SMD J9 HDR2X10 SMD connector smd cap 1206 diode smd J3 smd zener diode code J1
Contextual Info: 12 13 5 5 4 3 2 1 R2E 220 4 R2D 220 3 R2C 220 2 R2B 220 1 R2A 220 1 2 14 3 15 4 16 5 +3V SW1E DIG-8 D 12 J2 CON2 EE_SEL SW1D DIG-8 13 SW1C DIG-8 15 16 SW1B DIG-8 14 SW1A DIG-8 D C5 .01uF C6 22pF C7 22pF 2 C1 3.3uF 1 +3V U1 TSSOP-24 CA1A 100pF 1 16 FR 24 GND

Contextual Info: i n FEATURES MODEL I • 2 0 - 6 0 0 MHz U s ■ High Isolation mm ■ +36 dBm 3rd Order Intercepts XFER PIN Diode Transfar Striteli ■ TTL Driver ■ SMA Connectors 2 .00 ± .03 .08 1 .836 — 1.42 j b - ~ Ti l J2 ji J2 Ü PART IDENTIFICATION / 1.50 1.336

Contextual Info: MCP2021A/2A LIN Transceiver with Voltage Regulator Features: Description • The MCP2021A/2A is compliant with: - LIN Bus Specifications Version 1.3, and 2.x. - SAE J2602-2 • Support Baud Rates up to 20 kBaud • 43V Load Dump Protected • Maximum Continuous Input Voltage of 30V

2021A50E

Abstract: MCP2021A MCP2022A-500 500EMD diode marking 7Ls VREG-03 4x4x09
Contextual Info: MCP2021A/2A LIN Transceiver with Voltage Regulator Features Description • The MCP2021A/2A is compliant with: - LIN Bus Specifications Version 1.3, and 2.x. - SAE J2602-2 • Support Baud Rates up to 20 kBaud • 43V Load Dump Protected • Maximum Continuous Input Voltage of 30V