DIOD UG Search Results

33153

Contextual Info: O rder this docum ent by M C33153/D MOTOROLA M C33153 Single IGBT G ate Driver T he M C 3 31 53 is spe cifica lly d e sig ned as an IG BT d rive r for high po w e r a p plicatio ns tha t in clud e ac indu ction m otor control, bru shless d c m otor con tro l and un in te rru p ta b le po w e r supplies. A ltho ug h d e sig ned for driving

lp5n08le

Abstract: lp5n08 lp5n0 TB334 harris c RTE DIOD Diod UG Rlp5N08le
Contextual Info: HARRIS LP5N08LE ,\G^S S E M I C O N D I UU CC TT OORR S ^See5 < S S £ 5.5A, 80V, 0.120 Ohm, Current Limited, N-Channel Power MOSFET A ug ust 1998 Description Features 5.5A, 80V T he R L P 5N 08L E is an “ Intellig ent D iscrete” m on olithic po w e r circu it w h ich in corp orates a sm all sig na l b ipo lar tra n ­

Contextual Info: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u T SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m fl TMOS W aveFET™ de vice s are an ad van ced se rie s of po w e r M O SFETs w h ich utilize M o to ro la ’s

Contextual Info: MOTOROLA Order this document by MTDF2N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTDF2N06HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which

Diod UG

Contextual Info: MOTOROLA Order this document by MMSF3205/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3205 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS RDS on = 0.015 OHM

ITRON DC 205

Abstract: SF3305
Contextual Info: MOTOROLA Order this document by MMSF3305/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3305 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8 AMPERES 30 VOLTS W aveFET devices are an advanced series of pow er M O SFETs

Contextual Info: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M MFT1N10E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T

Contextual Info: MOTOROLA O rder this docum ent by M M DF2C02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs

10V4Z

Abstract: 708B
Contextual Info: P A I R C H May 1994 I I - D M IC D N D U C T Q R ! NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e se N -ch an nel e n h a n ce m e n t m ode po w e r field

UES2605

Abstract: UES2606 UES2604 UES2604R
Contextual Info: U ES2604-U ES2606 RECTIFIERS High Efficiency, 30A Center-Tap FEATURES D ESCRIPTIO N • • • • • • • T he U ES2604 series is spe cifically d e sign e d for operation in power sw itch ing c irc u its operating at frequencies of at least 20 KHz. T h is Series co m b in e s two h igh efficiency

ch6c

Abstract: EVUJ0
Contextual Info: ADC0834A, ADC0838A, ADC0834B, ADC0838B AfD PERIPHERALS WITH SERIAL CONTROL D 2795, A UG U ST 1 9 8 5 -R E V IS E D OCTOBER 1986 ADC0S34 . . . N PACKAGE 8-Bit Resolution TOP VIEW Easy Microprocessor Interface or StandAlone Operation v + : csC Operates Ratlometrlcally or w ith 5-V

Contextual Info: MOTOROLA Order this document by MMFT2N02EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T

XR13600

Abstract: XR-13600CP XR 13600 13600cp XR-13600 XR13600CP XR13600AP
Contextual Info: Z * EXAR XR-13600 Dual Operational Transconductance Amplifier G E N E R A L DESCRIPTION F U N C T IO N A L B LO C K DIAGRAM T h e X R -13600 is a dual operational tra nsconductance N orton a m plifier w ith predistortion diodes and non­ com m itted D arlington bu ffer outputs.

ICM72171

Abstract: CD4013 UP DOWN COUNTER 2N6034 ICM7109 ICM7217IJI CD4069 design of the IC CD4013 HARRIS ICM7555 ICM7217 ICM7217A
Contextual Info: ICM7217 Semiconductor 4-Digit LED Display, Programmable Up/Down Counter A ug ust 1997 Features Description • Four Decade, Presettable Up-Down Counter with Parallel Zero Detect The IC M 7217 is a four digit, presettable up/dow n counter with an onboard presettable register continuously com pared to the

ES2602

Abstract: ES2601T unitrode Applications Note
Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE CORP » F | ci347cltJB D D l l O M l 92D 11041 High Efficiency, 30ACenter-Tap FEATURES • Very Low Forward Voltage • Very Fast S w itc h in g Sp e e d • C on venient P ackage • H igh S u rge • Low Therm al R e sista n ce

Contextual Info: CA3290, CA3290A Semiconductor September 1998 BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output File Number 1049.3 Features • M O S F E T Input S tage T he C A 3 2 9 0 A and C A 3 29 0 type s co n sist o f a dual voltage co m p a ra to r on a sin gle m o n o lith ic chip. T he com m o n m ode

Contextual Info: MOTOROLA O rder this docum ent by M TD1N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N50E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 500 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: International ¡^Rectifier_ HEXFET Power MOSFET P D -9.1271 IRFD214 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d ss = 2 5 0 V ^ D S o n = 2 . 0 ß

Contextual Info: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA M TP2P50E D esigner’s Data Sheet Motorola Preferred Device TMOS E-FET ™ Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate T h is hig h v o lta g e M O S F E T u s e s an a d v a n c e d te rm in a tio n

F5044

Abstract: F5044H F5044H TE 3C87
Contextual Info: V« «Mm* • r k U m v\«»Ti > A HoJI Slvelrlt^ ,l.i 4 é U e lr le Za TVt |I*1 J U U l f. K 1" 9Ki »«V *N l>U ««<r Tu/ I Hi UM 0l VTf au Ir r*jr uMd v i*w ji« M ir p u ^ i v l l t a t l 1. Scope T h is 2.C o n « truclion S e lM s o t a S io n s p e c if ie s

6bj8

Abstract: 30-FRAME h 48 diode
Contextual Info: 6BJ8 TUNOSOl "N DOUBLE 01 ODE T RIO DE MINIATURE TYPE 7" ïïMAX C OA T E D UNI P O T E N T I A L ^ 2 CATHODE HEATER ^ 8 MAX T*6-g- 6.3 VOLTS Q.6±6* AMP. AC OR DC i 8 MAX A NY M OU N T I N G P O S I T I O N BOTTOM VIEW GLASS BULB M I N I A T U R E BUTTON

BYW31-100

Abstract: BYW31-150 BYW31-50 UES701 UES702 UES703
Contextual Info: BYW31-50 BYW31-100 BYW31-150 RECTIFIERS High Efficiency, 25A UES701 UES702 UES703 FEATURES DESCRIPTION • • • • • D esigned to meet the efficiency dem and of sw itching type power supplies, these devices are useful in m any sw itching applications.

Contextual Info: MOTOROLA O rder this docum ent by M TD1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N60E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 600 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: h a r ® S E M I C O N D U C T O R CA3290, CA3290A m W BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output N o vem b er 1996 Features Description • MOSFET Input Stage - Very High Input Impedance ZiN .1.7Tß (Typ) - Very Low Input Current at V+ = 5 V .3.5pA (Typ)