10V4Z
Abstract: 708B
Contextual Info: P A I R C H May 1994 I I - D M IC D N D U C T Q R ! NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e se N -ch an nel e n h a n ce m e n t m ode po w e r field
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ndp708andp708aendp708bndp708be+7ndb708andb708aendb708bndb708bendp70810v4z708b
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Contextual Info: M ay 1994 N NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's
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ndp708andp708aendp708bndp708be+5ndb708andb708aendb708bndb708bendp708
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708B
Abstract: NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708A NDP708AE NDP708B
Contextual Info: May 1994 N NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-ehannel enhancem ent mode power field effect transistors are produced using National's
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ndp708andp708aendp708bndp708be+6ndb708andb708aendb708bndb708bendp708708b
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NDB708A
Abstract: NDB708AE NDB708B NDB708BE NDP708A NDP708AE NDP708B NDP708BE
Contextual Info: N May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's
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ndp708andp708aendp708bndp708be+5ndb708andb708aendb708bndb708bendp708
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NDB708A
Abstract: NDB708AE NDB708B NDB708BE NDP708A NDP708AE NDP708B NDP708BE
Contextual Info: May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's
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ndp708andp708aendp708bndp708be+5ndb708andb708aendb708bndb708bendp708
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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NDB406B
Abstract: NDB406BL ndb706al NDB510AEL NDB510AL NDB510BEL NDB610AEL NDB610AL NDB610BEL NDB610BL
Contextual Info: _ . m bfiE D Power M O S F E T S continued bSD113Q 23b M N S C S TO-263AB Logic Level DMOS NATL SEMICOND (DISCRETE) N Channel N Channel r DS(OB)@ lo ^ B S (Volts) Min 100 Device Po b (Amps) (Watts) (mfì) (Amps/Volts) Max Max Max NDB710AEL 38 21/5 42 42
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bsd113do-263abndb710aelndb710al+12ndb710belndb710blndb610aelndb610alndb610belndb610blndb406bndb406blndb706alndb510aelndb510alndb510bel
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NDB406B
Abstract: NDB605A National Semiconductor Discrete catalog NDB506B NDB510A NDB510AE NDB510B NDB610A NDB610AE NDB610B
Contextual Info: böE D NATL TO-263AB DMOS SE I UCOND N Channel 100 Device NDB710A Po *D Amps (Watts) (mQ) (Amps/Volts) Max Max Max 38 21/10 42 42 21/10 40 65 13/10 26 (Volts) Min 150 80 80 12/10 NDB606B 24 120 7.5/10 15 150 6.5/10 13 250 4/10 8 300 3.5/10 7 NDB506A 60 NDB708A
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o-263abbsg113qndb710andb710ae+13ndb710bndb710bendb610andb610aendb610bndb610bendb406bndb605anational semiconductor discrete catalogndb506bndb510andb510aendb510b
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