33153
Abstract: No abstract text available
Text: O rder this docum ent by M C33153/D MOTOROLA M C33153 Single IGBT G ate Driver T he M C 3 31 53 is spe cifica lly d e sig ned as an IG BT d rive r for high po w e r a p plicatio ns tha t in clud e ac indu ction m otor control, bru shless d c m otor con tro l and un in te rru p ta b le po w e r supplies. A ltho ug h d e sig ned for driving
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C33153/D
C33153
MC33153/D
33153
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lp5n08le
Abstract: lp5n08 lp5n0 TB334 harris c RTE DIOD Diod UG Rlp5N08le
Text: HARRIS LP5N08LE ,\G^S S E M I C O N D I UU CC TT OORR S ^See5 < S S £ 5.5A, 80V, 0.120 Ohm, Current Limited, N-Channel Power MOSFET A ug ust 1998 Description Features 5.5A, 80V T he R L P 5N 08L E is an “ Intellig ent D iscrete” m on olithic po w e r circu it w h ich in corp orates a sm all sig na l b ipo lar tra n
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LP5N08LE
TB334
RLP5N08LE
O-22QAB
O-220AB
lp5n08le
lp5n08
lp5n0
TB334
harris c
RTE DIOD
Diod UG
Rlp5N08le
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u T SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m fl TMOS W aveFET™ de vice s are an ad van ced se rie s of po w e r M O SFETs w h ich utilize M o to ro la ’s
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MMSF3300/D
MMSF3300
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTDF2N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTDF2N06HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which
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MTDF2N06HD/D
MTDF2N06HD
46A-02
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Diod UG
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF3205/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3205 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS RDS on = 0.015 OHM
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MMSF3205/D
MMSF3205
Diod UG
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ITRON DC 205
Abstract: SF3305
Text: MOTOROLA Order this document by MMSF3305/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3305 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8 AMPERES 30 VOLTS W aveFET devices are an advanced series of pow er M O SFETs
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MMSF3305/D
MMSF3305
ITRON DC 205
SF3305
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M MFT1N10E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T
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MMFT1N10E/D
MFT1N10E
OT-223
318E-04
O-261AA
OT-223
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M DF2C02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs
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DF2C02HD/D
MMDF2C02HD/D
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10V4Z
Abstract: 708B
Text: P A I R C H May 1994 I I - D M IC D N D U C T Q R ! NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e se N -ch an nel e n h a n ce m e n t m ode po w e r field
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NDP708A
NDP708AE
NDP708B
NDP708BE
NDB708A
NDB708AE
NDB708B
NDB708BE
NDP708
10V4Z
708B
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UES2605
Abstract: UES2606 UES2604 UES2604R
Text: U ES2604-U ES2606 RECTIFIERS High Efficiency, 30A Center-Tap FEATURES D ESCRIPTIO N • • • • • • • T he U ES2604 series is spe cifically d e sign e d for operation in power sw itch ing c irc u its operating at frequencies of at least 20 KHz. T h is Series co m b in e s two h igh efficiency
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ES2604-U
ES2606
50nSec)
UES2604
UES2604
25Vdc
UES2605
UES2606
UES2604R
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ch6c
Abstract: EVUJ0
Text: ADC0834A, ADC0838A, ADC0834B, ADC0838B AfD PERIPHERALS WITH SERIAL CONTROL D 2795, A UG U ST 1 9 8 5 -R E V IS E D OCTOBER 1986 ADC0S34 . . . N PACKAGE 8-Bit Resolution TOP VIEW Easy Microprocessor Interface or StandAlone Operation v + : csC Operates Ratlometrlcally or w ith 5-V
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ADC0834A,
ADC0838A,
ADC0834B,
ADC0838B
ADC0S34
7b26c
ch6c
EVUJ0
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMFT2N02EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T
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MMFT2N02EL/D
OT-223
318E-04
O-261AA
OT-223
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XR13600
Abstract: XR-13600CP XR 13600 13600cp XR-13600 XR13600CP XR13600AP
Text: Z * EXAR XR-13600 Dual Operational Transconductance Amplifier G E N E R A L DESCRIPTION F U N C T IO N A L B LO C K DIAGRAM T h e X R -13600 is a dual operational tra nsconductance N orton a m plifier w ith predistortion diodes and non com m itted D arlington bu ffer outputs.
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XR-13600
XR-1468/1568
XR13600
XR-13600CP
XR 13600
13600cp
XR-13600
XR13600CP
XR13600AP
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ICM72171
Abstract: CD4013 UP DOWN COUNTER 2N6034 ICM7109 ICM7217IJI CD4069 design of the IC CD4013 HARRIS ICM7555 ICM7217 ICM7217A
Text: ICM7217 Semiconductor 4-Digit LED Display, Programmable Up/Down Counter A ug ust 1997 Features Description • Four Decade, Presettable Up-Down Counter with Parallel Zero Detect The IC M 7217 is a four digit, presettable up/dow n counter with an onboard presettable register continuously com pared to the
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ICM7217
ICM7207A
CD4011
ICM7217
400mV
ICM7109
ICM72171
CD4013 UP DOWN COUNTER
2N6034
ICM7217IJI
CD4069
design of the IC CD4013
HARRIS ICM7555
ICM7217A
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ES2602
Abstract: ES2601T unitrode Applications Note
Text: UNITRODE CORP 9347963 T2 UNITRODE CORP » F | ci347cltJB D D l l O M l 92D 11041 High Efficiency, 30ACenter-Tap FEATURES • Very Low Forward Voltage • Very Fast S w itc h in g Sp e e d • C on venient P ackage • H igh S u rge • Low Therm al R e sista n ce
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i347cl
30ACenter-Tap
ES2601T
UES2602
UES2603
UES2601HR
UES2602HR
UES2603HR
ES2602
ES2601T
unitrode Applications Note
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Untitled
Abstract: No abstract text available
Text: CA3290, CA3290A Semiconductor September 1998 BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output File Number 1049.3 Features • M O S F E T Input S tage T he C A 3 2 9 0 A and C A 3 29 0 type s co n sist o f a dual voltage co m p a ra to r on a sin gle m o n o lith ic chip. T he com m o n m ode
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CA3290,
CA3290A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD1N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N50E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 500 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TD1N50E/D
TD1N50E
MTD1N50E/D
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Untitled
Abstract: No abstract text available
Text: International ¡^Rectifier_ HEXFET Power MOSFET P D -9.1271 IRFD214 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d ss = 2 5 0 V ^ D S o n = 2 . 0 ß
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IRFD214
DQ2244S
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA M TP2P50E D esigner’s Data Sheet Motorola Preferred Device TMOS E-FET ™ Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate T h is hig h v o lta g e M O S F E T u s e s an a d v a n c e d te rm in a tio n
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MTP2P50E/D
TP2P50E
21A-09
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F5044
Abstract: F5044H F5044H TE 3C87
Text: V« «Mm* • r k U m v\«»Ti > A HoJI Slvelrlt^ ,l.i 4 é U e lr le Za TVt |I*1 J U U l f. K 1" 9Ki »«V *N l>U ««<r Tu/ I Hi UM 0l VTf au Ir r*jr uMd v i*w ji« M ir p u ^ i v l l t a t l 1. Scope T h is 2.C o n « truclion S e lM s o t a S io n s p e c if ie s
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APPR07SÃ
F5044H
HO4-004
K04-004-Ã
F5044
F5044H
F5044H TE
3C87
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6bj8
Abstract: 30-FRAME h 48 diode
Text: 6BJ8 TUNOSOl "N DOUBLE 01 ODE T RIO DE MINIATURE TYPE 7" ïïMAX C OA T E D UNI P O T E N T I A L ^ 2 CATHODE HEATER ^ 8 MAX T*6-g- 6.3 VOLTS Q.6±6* AMP. AC OR DC i 8 MAX A NY M OU N T I N G P O S I T I O N BOTTOM VIEW GLASS BULB M I N I A T U R E BUTTON
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525-LINE,
30-FRAME
6bj8
h 48 diode
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BYW31-100
Abstract: BYW31-150 BYW31-50 UES701 UES702 UES703
Text: BYW31-50 BYW31-100 BYW31-150 RECTIFIERS High Efficiency, 25A UES701 UES702 UES703 FEATURES DESCRIPTION • • • • • D esigned to meet the efficiency dem and of sw itching type power supplies, these devices are useful in m any sw itching applications.
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BYW31-50
BYW31-100
UES702
BYW31-150
UES703
UES701
UES703
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N60E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 600 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TD1N60E/D
TD1N60E
MTD1N60E/D
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Untitled
Abstract: No abstract text available
Text: h a r ® S E M I C O N D U C T O R CA3290, CA3290A m W BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output N o vem b er 1996 Features Description • MOSFET Input Stage - Very High Input Impedance ZiN .1.7Tß (Typ) - Very Low Input Current at V+ = 5 V .3.5pA (Typ)
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CA3290,
CA3290A
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