DIM1600FSM12 Search Results
DIM1600FSM12 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| DIM1600FSM12-A000 | Dynex | Single Switch IGBT Module | Original | 167.31KB | 10 | ||
| DIM1600FSM12-A000 | Linear Integrated Systems | 1600a 1200v Single Switch IGBT Module | Original | 169.05KB | 10 | ||
| DIM1600FSM12-A000 | Linear Integrated Systems | Single Switch IGBT Module | Original | 180.21KB | 10 |
DIM1600FSM12 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DIM1600FSM12-A000
Abstract: LIN26324
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Original |
dim1600fsm12-a000ds5533-3lin26324 | |
DIM1600FSM12-A000
Abstract: 6x transistor
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Original |
dim1600fsm12-a000ds5533-2ds5533-36x transistor | |
DIM1600FSM12-A000
Abstract: DIM1600FSM12-A
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Original |
dim1600fsm12-a000ds5533-4ds5533-5ln31767+1 | |
DIM1600FSM12-A000Contextual Info: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Preliminary Information DS5533-1.2 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates |
Original |
dim1600fsm12-a000ds5533-1 | |
DIM1600FSM12-A000Contextual Info: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5533-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5533-3.0 March 2003 |
Original |
dim1600fsm12-a000ds5533-2ds5533-3 | |
DIM1600FSM12-A000Contextual Info: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5533-1.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates |
Original |
dim1600fsm12-a000ds5533-1ds5533-2 | |
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Contextual Info: DIM1600FSM12-A000 Single Switch IGBT Module Replaces DS5533-3.1 DS5533-4 October 2010 LN27611 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) |
Original |
dim1600fsm12-a000ds5533-3ds5533-4ln27611 | |
DIM1600FSM12-A000Contextual Info: DIM1600FSM12-A000 Single Switch IGBT Module Replaces DS5533-3.1 DS5533-4 October 2010 LN27611 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) |
Original |
dim1600fsm12-a000ds5533-3ds5533-4ln27611 | |
Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
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Original |
ds5766-4tag 225-600igbt cross-referencescr gto+7 | |
kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
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Original |
ds5766-4kpb 307kp8 500kp9 1500 -12+7 | |
DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
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Original |
4500veeds5766-4dcr370tdcr370t18+8 | |
DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
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Original |
ds5766-4dcr2950wk1457tag 225-600+7 | |
IGBT cross reference semikron eupec
Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
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Original |
ds5468ds5468-2fz1200r33kf2140x190+14 | |
IGBT cross reference semikron eupec
Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
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Original |
ds5468ds5468-2fz1200r33kf2140x190+15 | |
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MP02X
Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
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OCR Scan |
acr300sgacr400seacr44udcr1002sf+12 | |
108X62Contextual Info: powerline igbt modules IG B T M o d u le s Generic Part Number Voltage Grade Current Rating Circuit Type VcES V 'c (A) @ T case CQ Max. Saturation Current Voltage VCE(SAT) Rating (Typical) «CM (A) (V) Total Switching Energy Isolation Voltage (mJ) v« (kV) |
OCR Scan |
gp250mhb06sgp350mhb06sgp500lss06sgp200mhs12+7 | |
DCR2950W
Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
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Original |
ds5766-4dcr2950wigbt types 6000vigbt sinewave inverter+7 | |