DIM400NSM33 Search Results

Contextual Info: DIM400NSM33-F000 Single Switch IGBT Module Replaces DS5883-3 DS5883-4 October 2011 LN28811 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

Contextual Info: DIM400NSM33-F000 Single Switch IGBT Module DS5883-1.0 March 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS

DIM400NSM33-F000

Abstract: 60749
Contextual Info: DIM400NSM33-F000 Single Switch IGBT Module DS5883-2.1 November 2008 LN26439 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A 800A *(measured at the power busbars and not the auxiliary terminals)

ge traction motor

Abstract: DIM400NSM33-F000 DIM400NSM33 DIM400N dim400nsm33-f
Contextual Info: DIM400NSM33-F000 Single Switch IGBT Module DS5883-2.0 April 2007 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS

DIM400NSM33-F000

Abstract: DIM400NSM33-F DIM400NSM33
Contextual Info: DIM400NSM33-F000 Single Switch IGBT Module Replaces DS5883-3 DS5883-4 October 2011 LN28811 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

DCR370T

Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches

2sd315ai

Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
Contextual Info: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.