DIFFUSED JUNCTION Search Results

DIFFUSED JUNCTION Result Highlights (5)

Part	Manufacturer	Description	Download
LF157H	Rochester Electronics LLC	LF157 - JFET Input Operational Amplifier	PDF
DG191AP/B	Rochester Electronics LLC	DG191 - Dual SPDT, High-Speed Drivers with JFET Switch	PDF
TL082ACDRE4	Texas Instruments	JFET-Input Operational Amplifier 8-SOIC 0 to 70
TL082BCDR	Texas Instruments	JFET-Input Operational Amplifier 8-SOIC 0 to 70
TL084ACNSR	Texas Instruments	JFET-Input Operational Amplifier 14-SO 0 to 70

DIFFUSED JUNCTION Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TLCR5800, TLCY5800 www.vishay.com Vishay Semiconductors Ultrabright LED, Ø 5 mm Untinted Non-Diffused Package FEATURES • Untinted non-diffused lens • Utilizing ultrabright AllnGaP AS • High luminous intensity • High operating temperature: Tj (chip junction	Original	TLCR5800, TLCY5800 JESD22-A114-B 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: TLCR5200, TLCY5200 Vishay Semiconductors Ultrabright LED, Ø 5 mm Untinted Non-Diffused FEATURES • • • • Untinted non-diffused lens Utilizing ultrabright AllnGaP AS High luminous intensity High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCR5200, TLCY5200 JESD22-A114-B 2002/95/EC 2002/96/EC 11-Mar-11	PDF
Contextual Info: TLCR6200, TLCY6200 Vishay Semiconductors Ultrabright LED, Ø 5 mm Untinted Non-Diffused FEATURES • • • • Untinted non-diffused lens Utilizing ultrabright AllnGaP AS High luminous intensity High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCR6200, TLCY6200 JESD22-A114-B 2002/95/EC 2002/96/EC 11-Mar-11	PDF
TLCR5200 Abstract: TLCY5200 Contextual Info: TLCR5200, TLCY5200 Vishay Semiconductors Ultrabright LED, Ø 5 mm Untinted Non-Diffused FEATURES • • • • Untinted non-diffused lens Utilizing ultrabright AllnGaP AS High luminous intensity High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCR5200, TLCY5200 JESD22-A114-B 2002/95/EC 2002/96/EC 18-Jul-08 TLCR5200 TLCY5200	PDF
Contextual Info: TLCR6200, TLCY6200 Vishay Semiconductors Ultrabright LED, Ø 5 mm Untinted Non-Diffused FEATURES • • • • Untinted non-diffused lens Utilizing ultrabright AllnGaP AS High luminous intensity High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCR6200, TLCY6200 JESD22-A114-B 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12	PDF
Contextual Info: VLCPG5100 Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP AS • High luminous intensity e2 • High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	VLCPG5100 JESD22-A114-B 2002/95/EC 2002/96/EC VLCPG5100 08-Apr-05	PDF
Contextual Info: TLCR/Y5200 Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP AS • High luminous intensity e3 • High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCR/Y5200 JESD22-A114-B 2002/95/EC 2002/96/EC 08-Apr-05	PDF
Contextual Info: TLCY511. Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP technology • Very high luminous intensity e3 • High operating temperature: Tj chip junction temperature up to 125 °C for	Original	TLCY511. 08-Apr-05	PDF
2N3055 Abstract: 2N3055 TO-220 2N3054 2N3440 2N3441 2N3442 2N3583 2N3584 2N6099 2N6101 Contextual Info: NPN DIFFUSED JUNCTION TABLE 1 - NPN SILICON DIFFUSED JUNCTIO N TRANSISTORS The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a w ide variety	OCR Scan	2N6103 T0-220 2N3055* 2N3442 2N6101 O-220 2N3441 2N3585 2N3584 2N3055 2N3055 TO-220 2N3054 2N3440 2N3583 2N6099	PDF
Contextual Info: TLCR/Y510. Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP AS • High luminous intensity e3 • High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCR/Y510. JESD22-A114-B 2002/95/EC 2002/96/EC 08-Apr-05	PDF
AS12 Abstract: TLCR6200-AS12 Contextual Info: TLCR6200, TLCY6200 Vishay Semiconductors Ultrabright LED, Ø 5 mm Untinted Non-Diffused FEATURES • • • • Untinted non-diffused lens Utilizing ultrabright AllnGaP AS High luminous intensity High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCR6200, TLCY6200 JESD22-A114-B 2002/95/EC 2002/96/EC 18-Jul-08 AS12 TLCR6200-AS12	PDF
2SA223 Abstract: 2SA201 2SA265 Contextual Info: -C o LIST OF DISCONTINUED TRANSISTORS Note: In this list n o distinction is m ade between PN Pand NPN. IX EMEt Epitaxial mesa type S: Silicon TME: Triple diffused mesa type G: Germanium AL: Alloy ju n ctio n type TD: Triple diffused type TDP: Triple diffused planar	OCR Scan		PDF
Contextual Info: TLCR/Y5800 Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP AS • High luminous intensity e3 • High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCR/Y5800 JESD22-A114-B 2002/95/EC 2002/96/EC 08-Apr-05	PDF
TLCR5200 Abstract: TLCY5200 Contextual Info: TLCR/Y5200 Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP AS • High luminous intensity e3 • High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCR/Y5200 JESD22-A114-B 2002/95/EC 2002/96/EC 18-Jul-08 TLCR5200 TLCY5200	PDF

ZS150 Abstract: ZS102 C642 diode zs104 ZS100 ZS101 ZS103 ZS104 ZS106 ZS108 Contextual Info: AXIAL DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series of diffused junction D07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 400m A and 250m A respectively.	OCR Scan	ZS100 ZS120 400mA 250mA ZS101 ZS102 ZS103 ZS104 ZS150 C642 diode zs104 ZS106 ZS108	PDF
Contextual Info: TLCY 581. Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP and OMA technology e2 • Very high luminous intensity • Very small emission angle • High operating temperature: Tj chip junction	Original	18-Jul-08	PDF
TLCS5110 Contextual Info: TLCS511. Vishay Semiconductors High Brightness LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP, OMA technology e2 • High luminous intensity • High operating tempreature: Tj chip junction temperature up to 125 °C for AllnGaP	Original	TLCS511. 2002/95/EC 2002/96/EC 18-Jul-08 TLCS5110	PDF
Contextual Info: TLCY 581. Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP and OMA technology e2 • Very high luminous intensity • Very small emission angle • High operating temperature: Tj chip junction	Original	08-Apr-05	PDF
ZS106 Abstract: zs102 diode ZS102 250mA ZS10B ZS100 ZS101 ZS103 ZS104 ZS108 Contextual Info: GENERAL PURPOSE DIODES TABLE 3 - SILICO N DIFFUSED JUNCTION DIO DES The ZS100 and ZS120 series of diffused junction glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 400m A and 250m A	OCR Scan	ZS100 ZS120 400mA 250mA ZS101 ZS102 ZS103 ZS104 ZS106 zs102 diode ZS10B ZS108	PDF
TLCPG5100 Abstract: TLCR5100 TLCY5100 TLCY5101 Contextual Info: TLCS/R/O/Y/YG/PG510. Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP AS • High luminous intensity e2 • High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCS/R/O/Y/YG/PG510. JESD22-A114-B 2002/95/EC 2002/96/EC D-74025 11-Aug-06 TLCPG5100 TLCR5100 TLCY5100 TLCY5101	PDF
2N3055 TO-220 Abstract: FGT3055 2N3054 2N3055 2N3440 2N3441 2N3442 2N3583 2N6099 2N6101 Contextual Info: NPN DIFFUSED JUNCTION TABLE 1 -N P N SILICON DIFFUSED JUNCTION TRANSISTORS The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching	OCR Scan	2N6103 2N3055 FGT3055 T0-220 2N3442 2N610y 2N3441 2N3585 2N3584 2N3055 TO-220 2N3054 2N3440 2N3583 2N6099 2N6101	PDF
BUW13AW Abstract: BUW13W Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUW13W; BUW13AW Silicon diffused power transistors Product specification File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors BUW13W; BUW13AW	Original	BUW13W; BUW13AW OT429 MBB008 MBK117 OT429) SCA55 137067/00/01/pp12 BUW13AW BUW13W	PDF
BUW11AW Abstract: BUW11W Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors Product specification File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW	Original	BUW11W; BUW11AW OT429 MBB008 MBK117 OT429) SCA55 137067/00/01/pp12 BUW11AW BUW11W	PDF
Contextual Info: TLCS/R/O/Y/YG/PG510. Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Utilizing ultrabright AllnGaP AS • High luminous intensity e2 • High operating tempreature: Tj (chip junction temperature) up to 125 °C	Original	TLCS/R/O/Y/YG/PG510. JESD22-A114-B 2002/95/EC 2002/96/EC 08-Apr-05	PDF

DIFFUSED JUNCTION Search Results

DIFFUSED JUNCTION Result Highlights (5)

DIFFUSED JUNCTION Datasheets Context Search

TLCR5200

2N3055

AS12

2SA223

TLCR5200

ZS150

TLCS5110

ZS106

TLCPG5100

2N3055 TO-220

BUW13AW

BUW11AW