DIE CHIP 51 Search Results

Contextual Info: Chip Mounting and Handling of GaAs MMIC Chips CHIP DIE DOWN BONDING TECHNIQUES Die Attach The important considerations for die attach are to have low thermal resistance, strong mechanical bond over the desired temperature range, and no damage occurring to the chip

M36P0R9070E0

Abstract: M58PR512J M69KB128AB
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

23LIST

Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

M36P0R9070E0

Abstract: M58PR512J M69KB128AB
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

cfi commands

Abstract: A0-A21 J-STD-020B M36W0R6030B0 M36W0R6030T0
Contextual Info: M36W0R6030T0 M36W0R6030B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM • SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V

infineon c167 bare die

Abstract: C167CR-LC AN10 AN11 AN12 C166 C167CR SAK-C167CR-LC c167 bare die 4536 timer circuits
Contextual Info: Microcontrollers C166 Family 16-Bit Single-Chip Microcontroller C167CR-LC, Bare Die, Step FA Data Sheet 1999-11 Bare Die Delivery www.infineon.com C167CR-LC Step FA C167CR-LC Revision History: (Bare Die Delivery) 1999-11, Step FA Previous Versions: 10.97

ZU 107

Abstract: 10BaseS visteon zu107
Contextual Info: high-tech vom feinsten High-Tech vom Feinsten system-on-a-chip: klein aber oho die herausforderung die position von infineon Früher wurden die verschiedensten Kommunikations- und Rechenvorgänge meist von mehreren Halbleiter-Bauelementen parallel ausgeführt. Mittlerweile werden

infineon c167 bare die

Abstract: ba 4614 4614 Ba 4164 ram bosch ac drive AN10 AN11 C166 C167CR SAK-C167CR-4RC
Contextual Info: Microcontrollers C166 Family 16-Bit Single-Chip Microcontroller C167CR-xC, Bare Die, Step GA Data Sheet 1999-11 Bare Die Delivery www.infineon.com C167CR-xC Step GA C167CR-xC Revision History: (Bare Die Delivery) 1999-11, Step GA Previous Versions: 1999-11

actel package mechanical drawing

Abstract: CC256 antifuse programming technology AC193 CERAMIC QUAD FLATPACK CQFP antifuse CQ208 CQFP 256 PIN actel
Contextual Info: Application Note AC193 Ceramic Chip Carrier Land Grid CC256 Package Handling Introduction Die-level solutions allow for the integration of differing technologies or products from multiple companies, all on the same board or multi-chip module. Die that can be tritemp tested or screened, also

me 4946

Abstract: SAK-C167CR-LC c167 bare die 7313 28 pin integrated circuit BOSCH bosch ac drive AN10 AN11 C167CR-LC
Contextual Info: Microcomputer Components 16-Bit CMOS Single-Chip Microcontroller Bare Die, Step BA C167CR/C167SR-LC Data Sheet 05.97 Bare Die Delivery C167CR-LC/C167SR-LC Revision History: (Bare Die Delivery) Original Version 05.97 Previous Releases: - Page Subjects Controller Area Network (CAN): License of Robert Bosch GmbH

SAMSUNG MCP

Abstract: MCP NAND
Contextual Info: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die

Silicon Microstructures

Abstract: MEDICAL PRESSURE die SM5102 OEM PRESSURE SILICON DIE
Contextual Info: SM5102 SILICON MICROSTRUCTURES INCORPORATED • OEM Silicon Pressure Die OEM SILICON PRESSURE SENSOR DIE DESCRIPTION Compensated The SM5102 is a silicon micro-machined, piezoresistive pressure-sensing chip. These devices are available in full-scale ranges

IRF540

Abstract: IRF540CHIP
Contextual Info: SGS-THOMSON itl ¥»HD S IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back Au/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

low PRESSURE die

Contextual Info: OEM Pressure Silicon Die Model 5102 Description The 5102 is a silicon micro­ machined, piezoresistive pressure sensing chip. These devices are available in full-scale ranges from 5 to 300 PSI and are ideal for OEM and high volume applications. Provided in die form, these sensors

BSW68

Abstract: AG TRANSISTOR BUY49S CP349 chip die npn transistor
Contextual Info: PROCESS CP349 Power Transistor NPN- High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 51 x 51 MILS Die Thickness 9.1 MILS Base Bonding Pad Area 7.9 x 15.7 MILS Emitter Bonding Pad Area 7.9 x 15.7 MILS Top Side Metalization Al - 30,000Å

CPD24

Abstract: datasheet 1N4937 1N4933 1N4937 1N4942 1N4948 1N5615 1N5623 CMR1F-02M DIE CHIP 51
Contextual Info: PROCESS CPD24 Fast Recovery Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 11 MILS Anode Bonding Pad Area 35 x 35 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

CMR1U-01M

Abstract: UF4007 CMR1U-01 CPD16 UES1001 UES1003
Contextual Info: PROCESS CPD16 Ultra Fast Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 14 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

PT 2102 ic

Abstract: HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003
Contextual Info: H E W L E T T - P A C K A R D n CMPNTS EOE D £3 44475Û4 m General Purpose Transistors HXTR-2001 Chip Technical Data Features ^ k laert ; LJ Generic Chip HXTR-2001 Recommended Die Attach and Bonding Procedures Eutectic Die Attach at a stage temperature of 410 ± 10°C under

80C166

Abstract: SAB80C166
Contextual Info: EVA16A Application Note SAB80C166 Speichererweiterung durch MemoryBanking Seit Jahren ist der Siemens Mikrocontroller SAB80C166 auf dem Markt verfügbar. Durch die extrem schnelle CPU und die zahlreichen on-chip verfügbaren Peripheriefunktionen eignet sich der SAB80C166 hervorragend für fast alle

Silicon Microstructures

Abstract: SM5106 tire pressure sensor low PRESSURE die
Contextual Info: SM5106 SILICON MICROSTRUCTURES INCORPORATED • Low Cost OEM Pressure Die Small, Low Cost OEM Pressure Die DESCRIPTION The SM5106 is a very small 1.56mm x 1.56mm silicon micromachined piezoresistive pressure sensing chip that has been optimized to provide the highest

nor flash 1.8V

Abstract: PSRAM M36P0R9060E0 M58PR512J
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

Contextual Info: BRIDGELUX BLUE POWER DIE BXFE 45 x 45 PRODUCT DATA SHEET DS-C18 The Bridgelux family of blue power die enables high performance and cost effective solutions to serve solid state lighting market. This next generation chip technology delivers improved efficiency and

BL51

Abstract: G100 P89C660 P89C668
Contextual Info: phyCORE-P89C668 QuickStart Instructions Using PHYTEC FlashToolsOCF for on-chip Flash and the µVision2 Software Evaluation Development Tool Chain Note: The PHYTEC Spectrum CD includes the electronic version of the phyCORE-P89C66x English Hardware Manual Hinweis: Die PHYTEC Spectrum CD beinhaltet die elektronische

PSRAM

Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory