DF TRANSISTOR Search Results

3RG7847-4BF

Abstract: 3RG7202-3CC00 3RG78 3RG7842 siguard 3RG7841 3zx1012 3RG7202-3BG00 Siemens Optical Sender 3rg7847-4b
Contextual Info: 4BDF-DE.book Seite 1 Montag, 7. August 2000 10:20 22 Auswertegerät 3RG7847-4B/DF mit Mutingfunktion für SIGUARD Lichtvorhänge Evaluation Unit 3RG7847-4B/DF with Muting Function for SIGUARD Light Curtains Technische Anleitung Instruction Manual Bestell-Nr./Order No. 3ZX1012-0RG78-4FA1

DF2-DC24V

Abstract: DF2-L2-DC12V matsua DF2-DC12V DF2-L2-DC24V df2-dc5v DF2-DC12V Relay Matsushita DS2 Relay Matsushita DS2 m df2-dc9v Relay Matsua DS2 m
Contextual Info: DF HIGHLY SENSITIVE DIP MINIATURE RELAY 16 .630 DF-RELAYS UL File No.: E43149 CSA File No.: LR26550 9.9 .390 • Smaller than most of 2 Form C relays Header area: 80% of DS2 relay Cubic measure: 57% of DS2 relay • High sensitivity — 100 mW nominal power

IR2086S

Abstract: BAV16WDICT "FULL-BRIDGE DC BUS CONVERTER" rectifier schematic zener db3 GRM188R61C105KA93D t2a sot23 IR2086 bridge rectifier 2A IRF7380
Contextual Info: IRDC2086S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2086S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated full-bridge DC-DC

Contextual Info: SIEMENS SPW11N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/df rated • Optimized capacitances • Improved noise immunity • Former development designation:

VPT09051

Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
Contextual Info: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity

BCW88H

Abstract: BCW67CR BCW67 BCW67A BCW67AR BCW67B BCW67BR BCW67C BCW68F BCW68FR
Contextual Info: BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4- JUNE 1996 PARTMARKING DETAILS - BCW67A - DA BCW67AR - 4W BCW67B - DB BCW67BR - 5W BCW67C - DC BCW67CR - 6W BCW68F - DF BCW68FR - 7T BCW68G - DG BCW68GR - 5T BCW68H - DH BCW68HR - 7N COMPLEMENTARY

df transistor

Abstract: BDT30AF BDT30BF BDT30CF BDT30DF BDT30F
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF

NPN Transistor VCEO 80V 100V

Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF

TIP626

Contextual Info: TEXAS INSTR ~b2 - COPTO} 8961726 TEXAS . ' «_•. : ' INSTR dF | ÖTblTEb D 0 3 b c]b4 ß 62C <OPTO 36964 " TIP625, TIP626, TIP627 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed For Complementary Use With TIP620, TIP621, TIP622

Contextual Info: "34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC MICRO-T continued dF J b3t,7ES5 (DIODES/OPTO) 34C CI03a202 38202 D r - 5f- n MMT74 — NPN RF AMPLIFIER TRANSISTOR • designed for high-gain, low-noise amplifier, oscillator and mixer applications. TOP

BCW67

Abstract: BCW58 BCW57 BCW57B BCW67BR BCW65 BCW66 BCW67A BCW68 BCW68HR-7N
Contextual Info: BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -JUNE 1996_ PARTM ARKING D ETA ILSBCW 67A- DA BC W 67B- DB BCW 67C- DC BCW 68F- DF BCW 68G - DG BCW 68H - DH BCW67AR BCW67BR BCW67CR BCW68FR BCW68GR BCW68HR -

Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

BCW68GR

Abstract: BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

SC08810

Contextual Info: f Z 7 SGS-THOMSON Ä 7 # M SR i[LiOT8raO@§ BCW67 BCW68 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW67A DA BCW67B DB BCW67C DC BCW68F DF BCW68G DG BCW68H DH . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

smd code 46n

Abstract: SPB46N03L smd diode 46A 46n03l
Contextual Info: SIEMENS SPP46N03L SPB46N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP46N03L Vfes 30 V b f lDS on @ VGS 46 A SPB46N03L 0.018 Q

Contextual Info: DF N 20 20 MD -6 PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench