DF 331 TRANSISTOR Search Results

DF 331 TRANSISTOR

Abstract: transistor df 331
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type l/bs b f l DS on Package Ordering Code BUZ 331 500 V 8A 0.8 n TO-218 AA C67078-S3114-A2 Maxim um Ratings Parameter Symbol Continuous drain current b Values

sdt9303

Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
Contextual Info: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @

DF 331 TRANSISTOR

Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

DF 331 TRANSISTOR

Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR
Contextual Info: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S

Contextual Info: SIEMENS BSP 324 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Vbs th = 1-5 .2.5 V Type VDS b f lDS(on) Package Marking BSP 324 400 V 0.17 A 25 n SOT-223 BSP 324 Type BSP 324 Ordering Code Q67000-S215 Tape and Reel Information

Contextual Info: SIEMENS BSP 324 SIPM OS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 v Type VDS BSP 324 400 V Type BSP 324 Ordering Code Q67000-S215 0.1 7 A ^DS(on) Package Marking 25 a SOT-223 BSP 324 Tape and Reel Information E6327

BUZ 336

Contextual Info: SIEMENS BUZ 50 A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 A Vos 1000 V b 2.5 A RfiSlon 5C2 Package Ordering Code TO-220 AB C67078-A1307-A3 Maximum Ratings Parameter Symbol Drain source voltage W)S Drain-gate voltage '' dgr

Contextual Info: N E C ELE CTR ON IC S INC 6 4 2 7 5 2 5 N E C E L E C T R O N I C S INC Tfl MOS dF | bi»57SaS OOITDHI S | ~ 9 8 D 19031 D j FIELD EFFECT TRANSISTOR ELECTRON DEVICE \ _ FAST SWITCHING P-CHANNEL S IL IC O N POWER 2J±a2 s.o±a 2 zi FET

Contextual Info: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h ^DS on Package Ordering Code 5.3 A 2w TO-218AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit

Transistor motorola 418

Abstract: MRF1500 motorola rf Power Transistor Transistor motorola 277 10-04 MOTOROLA TRANSISTOR
Contextual Info: MOTOROLA Order this document by MRF1500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1500 Motorola Preferred Device Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz

BUK436-100B

Abstract: BUK436-100A
Contextual Info: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

lidar ACC

Abstract: airbag
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . capacitors VJ.31 / VJ.34 • Automotive Applications • Product Range • AEC-Q200 Testing • Part Numbering w w w. v i s h a y. c o m instructional G uide Vishay Vitramon Automotive MLCC s Surface-Mount Multilayer

CDR03 receiver module

Abstract: CDR03 receiver 9926 mosfet Optoelectronics Device data Zener diode smd marking code 621 "Piezoelectric Sensor" sun chemical un 1210 array resistor 9926 ceramic disc 104 aec capacitors Zener diode smd marking code w1
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book surface mount MUltilayer Ceramic chip capacitors vishay vse-db0097-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

DF 331 TRANSISTOR

Contextual Info: MOTOROLA sc -c xstrs /r f > 13E D I t,3 b ? E S 4 □Df l TSt . T T -n -ty 1 | Order this data sheet by MG100BZ100/D MOTOROLA I SEMICONDUCTOR • 8 9 TECHNICAL DATA MG100BZ100 Isolated Gate Bipolar Power Transistor Module Energy M anagem ent Series D U A L N-CH ANN EL

real time microprocessor 8253 applications

Abstract: ic 8253 rtc M40Z111 M40Z300 M48T201V M48T201Y M4Z28-BR00SH1 M4Z32-BR00SH1 SOH28 SOH44
Contextual Info: New Controllers Turn Low Power SRAMs into Non-Volatile RAMs First devices in a family of surface-mount Controllers in the SNAPHAT package that address the needs for high density non-volatility with a substantially lower cost structure. NVRAM CONTROLLERS IN SNAPHAT

IL221AT

Abstract: IL222AT IL223AT RS481A 223AT
Contextual Info: IL221AT/222AT/223AT Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES A 1 8 NC • Isolation test voltage, 4000 VRMS C 2 7 B NC 3 6 C • Industry standard SOIC-8 surface mountable package

DSP56300

Abstract: DSP56303 G38-87 AA0482
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or

Response AA0482

Abstract: AA0463 AA0470 AA0482 284 278 DSP56300 DSP56302 G38-87 AA-0481 AA0460
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56302 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56302 specifications are preliminary and are from design simulations, and may not be fully tested or

Contextual Info: IL221AT/222AT/223AT Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES A 1 8 NC • Isolation test voltage, 4000 VRMS C 2 7 B NC 3 6 C • Industry standard SOIC-8 surface mountable package

331 Optocoupler

Abstract: IL221AT IL222AT IL223AT RS481A
Contextual Info: IL221AT/222AT/223AT Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES A 1 8 NC • Isolation test voltage, 4000 VRMS C 2 7 B NC 3 6 C • Industry standard SOIC-8 surface mountable package

Contextual Info: IL221AT/222AT/223AT Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES A 1 8 NC • Isolation test voltage, 4000 VRMS C 2 7 B NC 3 6 C • Industry standard SOIC-8 surface mountable package

TIP 41 transistor pin configuration

Abstract: FSK 9600 qmx05 SR-232 SM224ATL 1/929 rev oh s26
Contextual Info: SM224ATF e SM224ATF SocketModem Family Rockwell INTRODUCTION The Rockwell SM224ATF is a combination V.22 bis data and Group 3 facsimile fax CMOS modem in a compact socketmountable module. This complete solution allows OEMs to bring new features to market immediately, with minimal

Contextual Info: ILCT6/ MCT6 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel Features • Current Transfer Ratio, 50 % Typical • Leakage Current, 1.0 nA Typical • Two Isolated Channels Per Package Agency Approvals • UL - File No. E52744 System Code H or J

IL7660

Abstract: DF 331 TRANSISTOR
Contextual Info: IL766/ ILD766 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, AC Input, Internal RBE Features • • • • • • • Internal RBE for Better Stability BVCEO > 60 V AC or Polarity Insensitive Inputs Built-In Reverse Polarity Input Protection