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    DEVICE MARKING CODE GA Search Results

    DEVICE MARKING CODE GA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD2015FN
    Toshiba Electronic Devices & Storage Corporation Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30 Datasheet
    TPD2017FN
    Toshiba Electronic Devices & Storage Corporation Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30 Datasheet
    TC4511BP
    Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Datasheet
    TPD4206F
    Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=500 V / Iout=2.5 A / SSOP30 Datasheet
    TPD4204F
    Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2.5 A / SSOP30 Datasheet

    DEVICE MARKING CODE GA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking codes fairchild

    Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
    Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


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    and8004/dr14525marking codes fairchildhep08+8fairchild marking codes sot-23torex top codeand8004t324sot-353 a7marking l5 sot363xaa643and8004 d PDF

    marking codes fairchild

    Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
    Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


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    and8004/d14xxxr14525marking codes fairchild+9sot-363 a7wz 74 markingsot-363 marking wfmarking 324 tssop 16vk sot-363on semiconductor logic data code and traceabilitymarking code cpsot-363 a1 marking codeson tsop6 marking 6l PDF

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


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    and8004/d14xxxy1416vk sot-363+8lcx00and8004mc74hc04adr2ase chunglidate code markingmarking code" v2mx marking code sot23marking a6 sot363 PDF

    kvt22

    Abstract: KVL11 KPT23 ON Semiconductor marking k1648 KLT20 HEL16 KEL32 KEL01 xaa9646
    Contextual Info: AND8002/D ECLinPS, ECLinPS Lite and ECLinPS Plus Device Type and Date Code Marking Guide Gary Richards, ECL Logic Product Engineering http://onsemi.com APPLICATION NOTE need ON Semiconductor’s marking spec 12MON00232D and S.O.P. 7–19 ID of Products to Location of


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    and8002/d12mon00232dr14525kvt22+9kvl11kpt23on semiconductor markingk1648klt20hel16kel32kel01xaa9646 PDF

    2N55551

    Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
    Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit


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    2n55502n55512n5550/d2n55551+72n5550rlra2n5550rlrp2n5550rlrpg2n5551g2n5551rl12n5551rlra2n5551rlrm PDF

    2n5551

    Abstract: 2N55551 2N5551 circuit 2n5550
    Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit


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    2n55502n55512n555512n5551 circuit PDF

    2SC2012

    Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications


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    sc201sc201-2sc201-4sc201-6+3sc201-815x15mm2sc2012 PDF

    marking code GC diode

    Abstract: SC201 SC201-2 SC201-4 SC201-6 SC201-8 diode marking Gc marking CODE GA
    Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications


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    sc201sc201-2sc201-4sc201-6+515x15mmmarking code gc diodesc201-8diode marking gcmarking code ga PDF

    4060BE

    Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications


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    sc201200de15x15mm4060be PDF

    2N6426G

    Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
    Contextual Info: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage


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    2n64262n64272n6426/d2n6426g+42n6426rlra2n6427rlra2n6427rlrag2n64 PDF

    2N6426

    Contextual Info: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage


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    2n64262n64272n6426g2n6426rlra+32n6427rlra2n6427rlragbrd8011/d PDF

    M3-12H

    Abstract: fujitsu gaas marking code fujitsu gaas mm catalog CAPACITOR JL 1500 SJPL 4012K 1994C
    Contextual Info: PACKAGE MARKING Fujitsu's optoelectronic device has the following marking attached to each package or package case. cP 1. Manufacturer's Name: F or FUJITSU 2. Part Number: See part numbering systems 3. Serial Number: Serial number consists of Date Code and Sequence Number.


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    m3-12hfujitsu gaas marking codefujitsu gaas mm catalogcapacitor jl 1500+3sjpl4012k1994c PDF

    77V1254

    Contextual Info: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


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    77v1254l2577v1254l25pg PDF

    77V1254

    Abstract: 77V1254L25
    Contextual Info: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


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    77v1254l2577v1254l25pg PDF

    77V1253

    Abstract: 77V1254
    Contextual Info: 77V1253L25 Device Errata Notes Supplemental Information The revision of the 77V1253L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1253 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


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    77v1253l2577v125377v1254l25pg PDF

    Contextual Info: 77V1054L25 Device Errata Notes Supplemental Information The revision of the 77V1054L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1054 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


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    77v1054l2577v105477v1254l25pg PDF

    Contextual Info: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped


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    q62702g72 PDF

    Contextual Info: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package


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    cgy93pq62702g72 PDF

    sot marking code ZS

    Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
    Contextual Info: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


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    ot-23sot marking code zstransistor bfrmarking code r7 rf transistor+4sot-23 npn marking code vdbfr106transistor bfr 30sot-23 m PDF

    Contextual Info: 77V1053L25 Device Errata Notes Supplemental Information The revision of the 77V1053L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1053 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


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    77v1053l2577v105377v1254l25pg PDF

    GaAs FET cfy 14

    Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration


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    q62702-f1393q62702-f1394gaas fet cfy 14 PDF

    Contextual Info: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


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    q62702-f1776ot-343 PDF

    BF1009

    Abstract: 1009 Q62702-F1613
    Contextual Info: BF 1009 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    q62702-f1613ot-143jul-29-1996bf1009+11009 PDF

    smd MARKING CODE G72

    Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package


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    mw-16q62702-g72gpw05969smd marking code g72 PDF