DD3B33 Search Results

Contextual Info: SSP1N60A Advanced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V — 600 V

Contextual Info: IRF520A Advanced Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^DS on = 0.2Í2 lD = 9-2 A ■ 175°C Operating Temperature

Contextual Info: SSP7N80A Advanced Power MOSFET FEATURES B V DSS - 800 V • Avalanche Rugged Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. Low RDS(ON) ^DS(on) = 1.8 a < h- Rugged Gate Oxide Technology

Contextual Info: SSP6N70A A dvanced Power MOSFET FEATURES ^DSS — 700 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ^DS on = 1.8 Q < CD II _p ■ ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 700V

Contextual Info: SSP4N80A A d v a n c e d Power MOSFET FEATURES = 800 V B Vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V

lf7a

Contextual Info: SSP7N60A Advanced Power MOSFET FEATURES BVdss - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA (Max.) @ V DS = 600V

Contextual Info: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V

5d3 diode

Abstract: IRLZ44A 5d3 N-Channel A/SMD 5d3 diode
Contextual Info: IRLZ44A Advanced Power MOSFET FEATURES BVdss = 60 V • Logic-Level Gate Drive ■ Avalanche Rugged Technology ■ ■ ■ ■ ■ ■ ^DS on = 0 -0 2 5 Q Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area

74142

Abstract: SGP40N60UF INDUCTION LAMP ballast lc21
Contextual Info: SGP40N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast

IRFZ44A

Abstract: ne 22 mosfet
Contextual Info: IRFZ44A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* »Operating Temperature Lower Leakage Current : 10

irf610a

Contextual Info: IRF610A Advanced Power MOSFET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge - ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V H Low Rds(0n) ■ 1-169 £l(Typ.)

Contextual Info: a PRELIMINARY Advanced Micro Devices Am79C983 Integrated Multiport Repeater 2 IMR2 DISTINCTIVE CHARACTERISTICS • Repeater functionality compliant with IEEE 802.3 Repeater Unit specifications ■ Hardware implementation of Management Informa­ tion Base (M1B) with all of the counters, attributes,

Contextual Info: SSP5N90A A d van ced Power MOSFET FEATURES - 900 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 900V

Contextual Info: IRL630A Advanced Power MOSFET FEATURES b v dss Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ V OS = 200V ■ Lower RDS(0N) : 0.335 « (Typ.) 0.4 O

E200

Abstract: IRL510A
Contextual Info: IRL510A A d va n ce d Power MOSFET FEATURES B V DSS • ■ ■ ■ Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance ■ ■ ■ H Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS=100V

ld33a

Abstract: IRL610A
Contextual Info: IRL610A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive Rds oii = 1-5 £2 ■ Avalanche Rugged Technology ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area lD = 3.3 A

ifr 350 mosfet

Abstract: IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet
Contextual Info: IRL620A Advanced Power MOSFET FEATURES 200 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10pA M ax. @ VOS = 200V Lower RDS(ON) : 0.609 i l (Typ.)

DO313

Abstract: IRLZ34A 1GIT a2633
Contextual Info: IRLZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10

ld18a

Contextual Info: IR F640A Advanced Power MOSFET FEATURES B V DSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V

Contextual Info: SSP2N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology = 5.0 £2 ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V

Contextual Info: SSP3N90A A d van ced Power MOSFET FEATURES B V qss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 900V

Contextual Info: IRF630A A dvanced Power MOSEET Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V H Low Rds(0n) ■ 0.333 £1 (Typ.)

Contextual Info: IRL640A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive ■ Avalanche Rugged Technology ^DS on = 0 .1 8 ÎÎ ■ Rugged Gate Oxide Technology lD = 18 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area

Contextual Info: SSP2N90A Advanced Power MOSFET FEATURES - 900 V ^DS on = 7 .0 C i B V DSs • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V I Low RDs(on) • 5-838 Cl (Typ.) CM Extended Safe Operating Area