DD31S Search Results

BTAJ6

Abstract: si268 ha5105
Contextual Info: 30E » H 7^5^ 237 DD31S4Ô 1 • ^ Z S ~ \S V 7 S G S -T H O M S O N k7 # M œ m iO T T IH M D ! S G S-THOMSON B TA 16 B W SNUBBERLESS TRIACS ■ Itrms = 16 A at Tc = 80 °C. ■ Vdrm : 200 V to 800 V. ■ ■ ■ ■ Iq t = 50 mA Ql-ll-lll . GLASS PASSIVATED CHIP.

transistor t4B

Abstract: BFP91A tag 8726 BFQ23C Tag c0 665 800 transistor d 1557 0D31521 1557 transistor SOT173 SOT173 RF transistor
Contextual Info: i Philips Semiconductors 53*131 ^ DD31SE 1 T4b M i APX Product specification PNP 5 GHz wideband transistor . — — DESCRIPTION BFQ23C N AWER PHILIPS/DISCRETE PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT173X micro-stripline envelopes. It is

Contextual Info: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide GaAs laser diode driver to be used with direct modulated laser

800w inverter diagrams

Abstract: 800w power inverter circuit diagram
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - B R O W N 1' E DAC2813 1 DUAL 12-BIT DIGITAL-TO-ANALOG CONVERTER 12-bit port interface FEATURES • INTEGRAL LINEARITY ERROR: ±1/2LSB max • +12V to ±15V SUPPLIES • 28-PIN PLASTIC DIP PACKAGE

Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,

Contextual Info: KM29N16000ERS ELECTRONICS Fl ash 2 M x 8 B i t NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit

Contextual Info: Philips Semiconductors ^53^31 0031521 m b B i APX Product specification PNP 5 GHz wideband transistor . — — — BFQ23C i N A-flER PHILIPS/DISCRETE DESCRIPTION b'lE T> PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes. It is

philips bfq23

Abstract: BFQ23 BFR91A the pin function of ic 7423 BFR91A transistor transistor 9634
Contextual Info: Philips Sem iconductors ^ 5 3 ^ 3 1 0 D 3 1 5 13 T7T H A P X Product specification PNP 5 GHz wideband transistor BFQ23 N AMER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a plastic SOT37 envelope, primarily intended for use in UHF and microwave amplifiers,

UAA 146

Abstract: K3296 UAA 170 a7356 404344 K1962 A1837-2 M3204 A1439-2 LM 327 CN
Contextual Info: '0 CYPRESS CY7C0430V P R E L IM IN A R Y 3.3V 64K x 18 Synchronous QuadPort Static RAM Features • Counter wrap-around control • True four-ported memory cells which allow simulta­ neous access of the same memory location • Synchronous Pipelined device

varo r634

Abstract: SSIE1440 varo diode ssie1240 Varo r624 siemens ssie1440 R622 VARO SSIE1140 R628 SSIE1230
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer V VF IR IF Max RRM •FSM Max A 00 (A) 00 @ Test 25 °C @ (A) (A) IR VR Test M T2 @ Test (A) c r> Toper Package Style Max (°C) G n ral-Purp se, lo >= 25 A (Cont'd) . . . . 5 -10 .

lS286

Contextual Info: 3QE » • 7*^537 QD31Sfc.it T ■ _ ' T ' Z S r j £ Z 7 SG S-TH O M SO N 7 # s HICTliMQûS BTA 26 A ^ S S S - T H O M S O N TRIACS ■ ■ ■ ■ GLASS PASSIVATED CHIP Igt SPECIFIED IN FOUR QUADFiANTS INSULATING VOLTAGE 2500 V rms UL RECOGNIZED (E81734

82C206

Contextual Info: 47E D SIEMENS • flaasbos 0031S7D 1 « S I E G SIEMENS AKTIE NGE SELLSCHAF -rs a -3 S -5 5 SAB 82C211 CPU/Bus Controller of Siemens PC-AT Chipset Advance Information 117 3.90 47E » ■ Ö 535b05 0031571 SIEMENS AKTIENGESELLSCHAF -•

Contextual Info: K M 2 9 N 16 0 0 0 R Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

tam 0340

Contextual Info: b b 53^31 Philips Semiconductors □ □ 31 S 7 S TEb H A P X Product specification PNP 5 GHz wideband transistor 1 DESCRIPTION « N ArlER BFQ51 p h x l x p s / d i s CRETE b 'lE » PINNING PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF

Contextual Info: s í J- FUJITSU SEMICONDUCTOR DATA SHEET iiì^ p il^ g i 'if , m iA S ^ f IL25Í ^ P625/W625/626R/627R/P62' MB89PV620 • DESCRIPTION The MB89620R series has been developed as a general-purpose version of the F2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers.

IRF 140N 75

Abstract: bta 3045 0031SQS
Contextual Info: 3D ED H 7 ^ 2 3 7 G G 31500 b• _ _ _ _ _ Q S C S -T H O M S O N E f f lM jH i C T ©0101 SG S -T H 0M S 0N B T A 08 A W SNUBBERLESS TRIACS ■ ■ ■ ■ ■ ■ = 8 A at T o = 90 °C. : 200 V to 800 V. Ig t = 75 mA QI-II-III , GLASS PASSIVATED CHIP.

DAC4814

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only BURR - BROW N ? DAC4814 DAC4814 Quad 12-Bit Digital-to-Analog Converter (Serial Interface) FEATURES Q • COMPLETE QUAD DAC — INCLUDES INTERNAL REFERENCES AND OUTPUT AMPLIFIERS CONVERTERS • GUARANTEED SPECIFICATIONS

Contextual Info: 30E D 7 ^ 7 # • TTS'ìEa? DDBlSSb 0 ■ 'T - T S A ' ] S G S -T H O M S O N G K iæ L iû ir œ M S B TA 25 A S G S-TH0MS0N TRIACS ■ ■ ■ ■ . GLASS PASSIVATED CHIP FAST-ON CONNEXIONS Igt SPECIFIED IN FOUR QUADFIANTS INSULATING VOLTAGE 2500 V r m s

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW NS E REF01 1 +10V Precision VOLTAGE REFERENCE FEATURES DESCRIPTION • OUTPUT VOLTAGE: +10V ±0.2% max The REF01 is a high performance, low price, precision pin compatible second source voltage reference. Out­

Contextual Info: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7,1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is

Contextual Info: KM29N16000ER Flash ELECTRONICS 2Mx8Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register

Contextual Info: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in

BTA 08

Abstract: T2515 Q500 08-BW
Contextual Info: 3GE ì> m 7^237 GÜ315DM 3 • _^ P 2 S ~ l S SGS-THOMSON BTA 08 BW S G S-TH0MS0N SNUBBERLESS TRIACS ■ It r m s = 8 A at Te = 90 °C. ■ V drm : 200 V to 800 V. ■ Ig t = 50 mA Ql-ll-lll . ■ GLASS PASSIVATED CHIP. ■ HIGH SURGE CURRENT : It s m = 80 A.

triacs BTA 15 700

Abstract: BTA 16 bta 600b 200B 400B 600B 700B 800B rta 600B
Contextual Info: 3DE H Z T> m 7^5^537 003154M M • _ 'T-'ZS~\S 7 S G S - T H O M S O N ^ 7# S G S-THOMSON B T A 16 B TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT dv/dt c > 10 V/^is ■ I g t SPECIFIED IN FOUR QUADRANTS ■ INSULATING VOLTAGE 2 5 0 0 V rms ■ UL RECOGNIZED (E81734)