DD31B Search Results

BTA 36

Abstract: bta 700 BTA-SERIES BTA 18 800 triacs bt 16 triacs bt 130
Contextual Info: 3DE D WM 7^2=5237 DD31bbE T • S C S - T H O M S O N '“F - Z S - l S s 15 S T H O n s O N B liœ K Q it E e î ls e iia ic a B T A / B T B 0 8 T W LOGIC LEVEL TRIACS D E S C R IP T IO N ■ It r m s = 8 A at Tc = 80 °C. ■ V d r m : 200 V to 800 V. ■ !q t = 5 mA QI-II-lll .

AxC11

Contextual Info: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.

Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212

Contextual Info: Integrator Series FPGAs - 1200XL and 3200DX Famüies Features Cadence, Escalade, Exemplar, 1ST, M entor Graphics, Synopsys and Viewlogic High C a p a c ity • JTAG1149.1 Boundary Scan Testing • 2,500 to 40,000 logic gates • Up to 4 Kbits configurable dual-port SRAM

mc 79L

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - B R O W N S E SDM862 SDM863 SDM872 SDM873 1 16 Single Ended/8 Differential Input 12-BIT DATA ACQUISITION SYSTEMS FEATURES • POWER PLANT MONITORING • COMPLETE 12-BIT DATA ACQUISITION SYSTEM IN A MINIATURE PACKAGE

Contextual Info: HB56H164EJ Serie 1,048,576-word x 64-bit High Density Dynamic RAM Modul HITACHI ADE-203-697A Z Rev. 1.0 Dec. 27, 1996 Description The HB56H164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: HB56G236 Series, HB56G136 Series 2,097,152-word x 36-bit High Density Dynamic RAM Module 1,048,576-word x 36-bit High Density Dynamic RAM Module HITACHI ADE-203-702A Z Rev.1.0 Dec. 27,1996 Description The HB56G236 is a 2M x 36 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (HM5118160)

Contextual Info: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.

Contextual Info: Philips Semiconductors tb53^31 0031b73 3=n APX Product specification NPN 4 GHz wideband transistor — — BFQ136 N AUER PHILIPS/DISCRETE b^E ]> PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. Ail leads are isolated

10D41

Abstract: CMC 339 TT 2222 cross reference 2222 philips 0805 ceramic Philips npo 0805 AgPd resistor
Contextual Info: Philips Components Product specification Surface mounted ceramic multilayer capacitors FEATURES f t o Class 1, NPO series QUICK REFERENCE DATA • Six standard sizes DESCRIPTION • High capacitance per unit volume Rated voltage Ur DC • Supplied in tape on reel or in bulk

b1l3

Abstract: CV7C136 CY7C1361V25 CY7C1363V25 CY7C1365V25 7C1361-133
Contextual Info: ^ _ 5r^ C Y P R F .S S CY7C1361V25 CY7C1363V25 CY7C1365V25 PBEUm m m 256K x36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32/512K x 18 common I/O » Fast clock-to-output times — 7.5 ns lor 117-MHz device

Contextual Info: 3DE D • 7cJ5lìS37 GDBlb'ìS fi ■ S G S - T H O M S O N E _ T-ZS-lS S G S-THOMSON BTB 06 CW h SNUBBERLESS TRIACS A at Te = 1 00 °C. ■ V drm : 200 V to 800 V. ■ Iqt = 35 mA Ql-ll-lll . ■ It r m s = 6 ■ GLASS PASSIVATED CHIP. ■ HIGH SURGE CURRENT : It s m = 60 A.

ge 8513

Contextual Info: 5 b E *57 7 D ^ 2 3 ? Q G a ^ S 'ib SCS-THOMSON S G T ? *! • S G T H S -T H O M S O N TSG8513 iL O T -¿ ¥ -¿ > 5 ~ SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER ■ CHEBYCHEVTYPE ■ 8TH ORDER ■ STOPBAND ATTENUATION : 69dB typ AT 2 x Fc ■ PASSBAND RIPPLE : 0.15dB (typ)

Contextual Info: £U £J_ei £ ÿ j 7T5T237 QG31b2Q 5 • _ 'T-ZS-iS S G S - ÎH HO O MM SS OO NN B T A /B T B 06 S [H O T M *S S G S-TH0MS0N SENSITIVE GATE TRIACS ■ GLASS PASSIVATED CHIP ■ Ig t SPECIFIED IN FOUR QUADRANTS ■ AVAILABLE IN INSULATED VERSION -» BTA SERIES INSULATING VOLTAGE

Contextual Info: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input

LQ-500

Abstract: SO-110
Contextual Info: 3DE T> m S C S _ 'T'’7.S'\S 7^5^237 ÜD31bôM - T H O M S O N [M Û [î* L [IÛ ÏÏ[F 3 g * S S 6 - B T B 0 6 A W S- THOMSON SNUBBERLESS TRIACS • Itrms = 6 A a t T c = 1 0 0 °C. ■ V drm : 200 V to 800 V. ■ Igt = 75 mA (Ql-ll-lll). ■ GLASS PASSIVATED CHIP.

Contextual Info: Philips Sem iconductors bL.SB'm 0 0 3 1 ^ 2 lfi7 • APX Product specification BFQ163 NPN 1 GHz video transistor N AilER PHILIPS/DISCRETE b 'lE ]> ' PINNING DESCRIPTION NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a

24MHZ

Abstract: 48MHZ PC11 W48S111 W48S111-14
Contextual Info: W CYPRESS PRELIMINARY W48S111-14 Spread Spectrum Desktop/Notebook System Frequency Generator Features Key Specifications • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Reduces measured EMI by as much as 10 dB • l2C programmable to 133 MHz

LSK Series

Abstract: D031 PC11 W130 0z16
Contextual Info: 0 CYPRESS PRELIMINARY W130 Spread Spectrum Desktop/Notebook System Clock Features CPU0:5 Clock Skew:. 175 ps * Maximized EMI suppression using Cypress’s Spread Spectrum technology * Six copies of CPU Clock

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROW N" E REF102 1 Precision VOLTAGE R EFER EN C E FEATURES APPLICATIONS • +10V ±0.0025V OUTPUT • VERY LOW DRIFT: 2.5ppm/°C max • EXCELLENT STABILITY: 5ppm/1 OOOhr typ • EXCELLENT LINE REGULATION:

AW 55 IC

Contextual Info: N E C ELECTRONICS INC 3ÖE D • b427S25 ODBlbMM T ■ NECE M C -4 2 1 0 0 0 A 9 1 ,0 4 8 ,5 7 6 X 9 -B it CMOS Dynam ic RAM M odule NEC Electronics Inc. r ~ Description w ~ i 3 - i 7 Pin Configurations The MC-421000A9 is a fast-page, 1,048,576-word by 9-bit C M O S dynamic R A M module, designed to operate

Contextual Info: TC59GJ632AFB-80,-10,-12 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT StU CbN ^pN bLIJH IC 262,144-WORDX 2-BANKX32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1632AFB is a CM OS synchronous graphics random access memory or& ajiize^a* 262.144

Contextual Info: Advance Data Sheet February 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations Ambassador T8100 H.100/H.110 Interface andTime-Slot Interchanger 1 Product Overview Programmable switching between local time-slots and H.100 bus, up to 256 connections

Contextual Info: KM29N32000RS Fl ash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512+16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte