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Vishay Intertechnologies D55342K07B1L30RUL SMD Chip Resistor, 1.3 Mohm, ? 5%, 250 mW, 1206 [3216 Metric], Thin Film, Established Reliability - Tape and Reel (Alt: D55342K07B1L30RUL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	D55342K07B1L30RUL	Tape & Reel		7 Weeks	300	1 - 10 - 100 - 1000 $0.70 10000 $0.65	Buy Now
Vishay Intertechnologies M55342K06B1L30RWB SMD Chip Resistor, 1.3 Mohm, ? 5%, 150 mW, 0805 [2012 Metric], Thin Film, Established Reliability - Waffle Pack (Alt: M55342K06B1L30RWB)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M55342K06B1L30RWB	Waffle Pack		7 Weeks	100	1 - 10 - 100 $3.40 1000 $1.32 10000 $1.19	Buy Now
Torex Semiconductor LTD XCL208B1L3DR DC/DC Converter Synchronous Step-Down Single 1.85V 400mA 2V to 6V 10-Pin USP-B03 T/R - Tape and Reel (Alt: XCL208B1L3DR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	XCL208B1L3DR	Tape & Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.50	Buy Now
Torex Semiconductor LTD XCL209B1L3DR DC/DC Converter Synchronous Step-Down Single 1.85V 400mA 2V to 6V 10-Pin USP-B03 T/R - Tape and Reel (Alt: XCL209B1L3DR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	XCL209B1L3DR	Tape & Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.43	Buy Now
Vishay Intertechnologies M55342K05B1L30RWB SMD Chip Resistor, 1.3 Mohm, ? 5%, 225 mW, 2208 [5819 Metric], Thin Film, Established Reliability - Waffle Pack (Alt: M55342K05B1L30RWB)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M55342K05B1L30RWB	Waffle Pack		7 Weeks	50	1 - 10 - 100 $2.86 1000 $1.11 10000 $1.11	Buy Now

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B1L3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
b1l3 Contextual Info: MBRA130LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high	Original	MBRA130LT3 r14525 MBRA130LT3/D b1l3	PDF
Contextual Info: MBRA130LT3G, NRVBA130LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	MBRA130LT3G, NRVBA130LT3G MBRA130LT3/D	PDF
t9842b Abstract: LH002H U102h T6B31 RTC Z80 CODE Z80 MANUAL keyboard matrix toshiba CE300H tc8521 po14h Contextual Info: TOSHIBA T6B31 TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T6B31 8-BIT CONTROLLERS FOR CONSUMER ELECTRONICS PRODUCTS 1. INTRODUCTION The T6B31 is an 8-bit microprocessor of low power consumption and high performance that has been developed using Toshiba's CMOS silicon gate technology.	OCR Scan	T6B31 T6B31 TC8521) TC8570) D-0-24 QFP100-P-1420-0 t9842b LH002H U102h RTC Z80 CODE Z80 MANUAL keyboard matrix toshiba CE300H tc8521 po14h	PDF
b1l3 Abstract: Si3225 ProSLIC Q1 25C2 AN58 Contextual Info: AN58 S i 3 2 2 0 / S i 3 2 2 5 P ROGRAMMER ’S G UIDE 1. Si3220/Si3225 RAM & Register Space The Si3220/Si3225 is a highly-programmable telephone linecard solution that uses internal registers and RAM to program operational parameters and modes. The register and RAM space are explained in this	Original	Si3220/Si3225 b1l3 Si3225 ProSLIC Q1 25C2 AN58	PDF
b1l3 Abstract: MBRA130LT3 403B 403D Contextual Info: MBRA130LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high	Original	MBRA130LT3 r14525 MBRA130LT3/D b1l3 MBRA130LT3 403B 403D	PDF
b1l3 Abstract: 403D MBRA130LT3 MBRA130LT3G Contextual Info: MBRA130LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	MBRA130LT3 MBRA130LT3/D b1l3 403D MBRA130LT3 MBRA130LT3G	PDF
able mx 1608 RX Abstract: tqfp 64 thermal resistance Si3220-KQ SMD transistor SF3 mx 1608 RX 2n2222 smd with hybrid parameter value low frequency bandpass filter smd a1z PCM IOM-2 b1l3 smd Contextual Info: Si3220/Si3225 PR ELIM IN AR Y DATA SH EET D U A L P R O S LIC P R O G R A M M A B L E C M O S SLI C/ C O D E C Features Performs all BORSCHT functions Ideal for applications up to 18 kft Internal balanced ringing to 65 Vrms Si3220 External bulk ringer support (Si3225)	Original	Si3220/Si3225 Si3220) Si3225) able mx 1608 RX tqfp 64 thermal resistance Si3220-KQ SMD transistor SF3 mx 1608 RX 2n2222 smd with hybrid parameter value low frequency bandpass filter smd a1z PCM IOM-2 b1l3 smd	PDF
MBRA130LT3G Abstract: b1l3 Contextual Info: MBRA130LT3G, NRVBA130LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	MBRA130LT3G, NRVBA130LT3G AEC-Q101 MBRA130LT3/D MBRA130LT3G b1l3	PDF
b1l3 Abstract: 403D MBRA130LT3 Contextual Info: MBRA130LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high	Original	MBRA130LT3 MBRA130LT3/D b1l3 403D MBRA130LT3	PDF
b1l3 Abstract: SMA CASE 403D-02 403D MBRA130LT3 Contextual Info: MBRA130LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high	Original	MBRA130LT3 r14525 MBRA130LT3/D b1l3 SMA CASE 403D-02 403D MBRA130LT3	PDF
U840 diode motorola Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001 Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in	Original	DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001	PDF
b1l3 Abstract: 100E3 100E-6 Contextual Info: MBRA130LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high	Original	MBRA130LT3 100E-3 10E-3 100E-6 10E-6 10E-3 100E-3 b1l3 100E3	PDF
b1l3 Abstract: 100E3 Contextual Info: MBRA130LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high	Original	MBRA130LT3 100E-3 10E-3 100E-6 10E-6 10E-3 100E-3 b1l3 100E3	PDF
b1l3 Abstract: 403D MBRA130LT3 MBRA130LT3G Contextual Info: MBRA130LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	MBRA130LT3 403D-01 403D-02. b1l3 403D MBRA130LT3 MBRA130LT3G	PDF