DD037 Search Results

ECG1011

Abstract: Philips ECG g1009 KF 520 MTVA0100N05W3 ECG1009 ECG1010 6k8k
Contextual Info: LbSBTEÔ DD0373M 0 17E D PHILIPS E C G INC EC G 1009 1W AUDIO POW ER AM PLIFIER ECG1010 2W AUDIO POW ER AM PLIFIER sem iconductors ECG1011 3W AUDIO POW ER AM PLIFIER Dimensions In Mllllm«t«rs ECG1009 Ta=25°C Absolute Maximum Ratings V 16 Vcc max Maximum Supply Voltage

DUP1

Contextual Info: FIJCRON TECHNOLOGY INC MICRON SSE T> • blllSMT DD037M3 DT4 ■ URN M T56C 2818 8 K x 18, DUAL 4 K x 18 C A CH E DATA SRAM ■ - ; CACHE DATA -0 4 - q q a i i

Contextual Info: SIE D • Ö13bb71 DD037S2 b37 « S E K G SEMIKRON SEMIKRON INC Maximum Ratings VcEVsus lc = 1 A ,V be = - 2 V V V V V A 300 150 8 1000 - 4 0 . . . + 150 - 4 0 . . . + 125 2500- A A A W °C °C V o II O D. C. tp = 1 ms Ib Tease —25 °C Ptot Tvj Tstg Visol

ECG1011

Abstract: ECG1010 KF10 ecg1009
Contextual Info: 17E D PHILIPS E C G INC • btiSBTHfi DD0373M 0 ECG 1009 1W A U D IO P O W E R A M P L IF IE R ECG 1010 2 W A U D IO PO W E R A M P L IF IE R semiconductors ECG1011 3W A U D IO P O W E R A M P L IF IE R Dimensions In Millimeters ECG1009 Ta=25°C Vcc RL 11

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 DD037S3 t> ■ î-91-01 P R O C E S S NJ16 Process NJ16 N-Channel Junction Field-Effect Transistor Process NJ16 is an N-channel junction fieid-effect transistor designed for low-current, general-purpose applications. This process is particularly useful in

A1396

Contextual Info: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper­

ke721k03

Abstract: KE721203 KE524505 KE7245A1 KED245A1 KE524575 KE524510 KE724502 KE924503 KE921205
Contextual Info: POÜJEREX INC m u D B w • DD037M3 5 M P R X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14

Contextual Info: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

NJM2058

Abstract: DDD3733 HJH205BM NJM2058V NJM4558
Contextual Info: QUAD OPERATIONAL AMPLIFIER NJM2058 T he NJM2058 integrated circuit is a quad high-gain operational am plifier internally com pensated and constructed on a single silicon chip using an advanced epitaxial process. Each amplifier o f th e NJM2058 has the same electrical characteristics of the NJM4558.

Contextual Info: GENNUM C O R P O R A T I O G X 434 Monolithic 4x1 Video Multiplexer N DATA SHEET FEATURES CIRCUIT DESCRIPTION • low differential gain: 0.03% typ. at 4.43 MHz The GX434 is a high performance low cost monolithic 4x1 video multiplexer incorporating four bipolar switches with a

Contextual Info: IBM11D1365E IBM11D2365E 1M/2M x 36 DRAM Module Features 72-Pin Single-In-Line Memory Module Performance: -60 High Performance C M O S process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & C M O S compatible Low active current dissipation

Contextual Info: OPERATIONAL AMPLIFIER NJM741 T he NJM741 is a high perform ance M onolithic O perational A m plifier constructed using the New JR C Planar epitaxial process. It is intended for a wide range of analog applications. High com m on m ode voltage range and absence of latch-up

Contextual Info: P F 7 8 0 -0 2 EPSON SEDI 752 Series High Duty LCD Driver • Suitable for Color STN-LCD • 240 Output Segment Driver • Super Slim TCP • DESCRIPTION SED1752 is a 240 output segment column LCD driver suitable for driving of colored STN dot-matrix LCD panels

cd 4069 pin data

Abstract: 82C43 CI 4069 cjne MSM80C31F MSM80C31 MSM80C51F *82c43 80C31F
Contextual Info: O K I SEMICONDUCTOR GROUP IDE D | t.754S4D Q003b78 7 | C 5 1 1 C .1 I s e m i c o n c a y c t o r M S M 8 0 C 3 1 F /M S M 8 0 C 5 1 F -t - w - h - p i - n '- * - * ! CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51F m icrocontroller is a low power, high performance 8-bit single

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 05QM33Ö Ü003723 Ö ■ T -9 1-0 1 PR O CESS SRB Process SRB PNP Darlington Transistor Process S R B is a double-diffused silicon epitaxial P N P Darlington pair. This device is designed for use as a high-gain amplifier in audio and control circuits

HY628100

Contextual Info: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: PHILIPS E C INC G 17E D bbSBTSñ ECG1004 T -7 7 -0 7 -0 5 n TV AUTOMATIC FREQUENCY TUNING semiconductors k m □ f ? F u n c tio n s of w id e ban d am p lifier, 2 p h a s e d e te c t o r a nd d i f f e r e n tia l DC a m plifier. 3 5 6 7 .6 2 * » * * M axim um R » t in g s /T a = 2 5 ‘C

sed1672f

Contextual Info: EPSON PF838-02 SEDI 672 Dot Matrix High Duty LCD Driver • 68 Output • 1/64 to 1/300 in display duty • CMOS High Voltage Resistant Process • OVERVIEW The SED1672 is a 68 output low-power resistance common row driver which is suitable for driving a very high

Contextual Info: M O S E L V IT E L IC V53C8258H ULTRA-HIGH SPEED, 2 5 6K X 8B IT PAGE MODE WITH EXTENDED DATA OUTPUT EDO CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, (tRAC) 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA)

Contextual Info: & C I A T O - " S b S IS b l 0DD37S1 ADS-946 2 Tb • 14-Bit, 8MHz Sampling A/D Converters INNOVATION and EXCELLENCE FEATURES • • • • • • • • • • 14-bit resolution 8MHz guaranteed sampling rate No missing codes over full military temperature range

Contextual Info: fINTERNATIONAL RB151 S e m ic o n d u c to r , I n c . thru RB157 M INIATURE SINGLE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 1.5 Amperes FEATURES: .35 8 Max 9 . 1 D ia Plastic m aterial used carries U nderw riters Laboratory recognition 94 V -0

Contextual Info: 4TE J> TAIWAN LITON ELECTRONIC • &&35h^5 0003?bl S3b LTS-360 SERIES LITEM Î ITLIT 0.36" SINGLE D IG IT NUMERIC DISPLAYS FEATURES • 0 .3 6 IN C H 9 .2 0 m m D IG IT H E IG H T . • C O N T IN U O U S U N IF O R M S E G M E N T S . • C H O IC E O F F IV E B R IG H T C O L O R S -R E D /B R IG H T

Contextual Info: IBM11D1360Q IBM11E1360Q IBM11D2360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 : W c ; RAS Access Time 60ns 70ns I tcAC i CAS Access Time 15ns 20ns 30ns 35ns j Iaa !Access Time From Address

6DI15S-050

Abstract: M106 M115 M210 6DI20MS-050 1di200 1di400
Contextual Info: BIPOLAR TRANSISTO R M O D U LES Ratings and Specifications 3 H igh-speed sw itch in g 1400 volts class p o w e r tran sisto r m odules • S uited fo r m o to r control ap p licatio n s w ith 5 7 5V A C input. • P o w er transistors and fre e w h e e ls are built into o ne package.