DD 127 TRANSISTOR Search Results

DD 127 D TRANSISTOR

Abstract: STP4NA100
Contextual Info: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

JMC5701

Abstract: GPS-101-2
Contextual Info: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold

DD 127 D TRANSISTOR

Contextual Info: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.

JMC5701

Abstract: Y 335
Contextual Info: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold

STH5NA100FI

Abstract: STW5NA100 TRANSISTORS 132 GD
Contextual Info: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

SIEMENS 3 TB 40 17 - 0A

Abstract: SIEMENS 3 TB 40 17 - 0B SIEMENS 3 TB 40 12 - 0A
Contextual Info: ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73,

Contextual Info: Zjï SGS-THOMSON ¡[LieraMe STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V dss R d S oii Id S T W 5 N A 1 00 S T H 5N A 1 00 F I 1 0 00 V 1 0 00 V < 3 .5 Q. < 3 .5 CÌ 4 .6 A 2 .9 A TYPICAL R D S (on) = 2.9 Î2

Contextual Info: S G S -T H O M S O N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ S T P 4 N A 100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss S T P 4 N A 1 00 1000 V R dS(oii) <3. 5 Q. Id 4.2 A . • TYPICAL RDS(on) =2.9 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: 7^2^237 G G 4 b 4 cî 7 ÛT3 «SSTH STP50N06 STP50N06FI SGS-THOMSON id * ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI . . • . . . . . V dss RDS on Id 60 V 60 V < 0.028 n < 0.028 Q 50 A 27 A TYPICAL Rds(oh) = 0.022 £2

DD 127 D TRANSISTOR

Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N
Contextual Info: IPB070N06N G OptiMOS Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature

MA7805

Abstract: Transistor 2n2307 K1202 2SK19GR 2SK19Y 2N3406 DG-34 transistor ns800 Dh-37 C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD EFFECT TR A N SIST O R S 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

IEC61249-2-21

Abstract: IPB066N06N IPP066N06N C2320
Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature

DD 127 D TRANSISTOR

Abstract: DD 127 D TDSON-8 Mosfet BSC027N03S JESD22
Contextual Info: BSC027N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 2.7 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications

Contextual Info: TOSHIBA TB6520P TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB6520P PW M TYPE 3-PHASE FULL-WAVE SENSORLESS MOTOR CONTROLLER The TB6520P is a PW M chopper type 3-phase full-wave sensorless motor controller. It is capable of PW M type sensorless driving when used in conjunction with

Contextual Info: W5280 i.lV in bond Electronics Corp. ADPCM VOICE SYNTHESIZER ROM-less PowerSpeech GENERAL DESCRIPTION The W5280 is a CMOS 1C that is used solely tor the purpose ot demonstrating W528X series PowerSpeech products. The W5280 employs the same JUMP-GO architecture as most ot Winbond's other speech

W525

Contextual Info: W528XXX i.lV in b o n d E lectronics Corp. ADPCM VOICE SYNTHESIZER PowerSpeech GENERAL DESCRIPTION The W 528xxx fam ily are programmable speech synthesis ICs that utilize the ADPCM coding method to generate all types of voice effects. The W528xxx&#39;s LOAD and JUMP commands and four programmable registers provide powerful userprogrammable functions that make this chip suitable for an extremely wide range of speech 1C

DD 127 D transistor

Contextual Info: EPSON PF237-05 SVM7960C Series Multi-Melody 1C • 2 Sound Sources •1 2 7 Words Melody ROM •Dynam ic Loudspeaker Driving Capability • 4 Melodies Max. Binary Selection or 3 Melodies(Direct Melody Selection) I DESCRIPTION The SVM7960C Series CMOS IC produce melodies or alarm tones from a preprogrammed ROM. The ROM has a

W525

Abstract: w5283
Contextual Info: W528X ADPCM VOICE SYNTHESIZER PowerSpeech GENERAL DESCRIPTION The W528X family are programmable speech synthesis ICs that utilize the ADPCM coding method to generate all types ot voice ettects. The W528X&#39;s LOAD and JUMP commands and tour programmable registers provide powerful userprogrammable functions that make this chip suitable for an extremely wide range of speech 1C

Space Electronics

Abstract: DD 127 D TRANSISTOR 3 phase ac sinewave phase inverter single ic ttl to cmos converter 1N914 8408RP DAC8408 OP470 OP-470 OP-490
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. QUAD 8-BIT MULTIPLYING D/A CONVERTER S PACE PRODUCTS 8408RP VREFB VDD VREFA 8 1 2 RFB Latch A A 3 RFBA 4 I OUT 1A Tri-State Buffer I OUT 2A/ I OUT 5 DB0 LSB DATA BUS 9 DB7 (MSB) 16 Bi-Directional Line Driver B Tri-State Buffer

C3117

Abstract: transistor b764 TRANSISTOR D400 transistor D1207 s transistor b985 TRANSISTOR D1347 B892 D1207 s Transistor d1153 B985
Contextual Info: SA0YO P C P Power C h i p Pack o te Transistor Series C a s e s F* s at ur* ♦ Very small size making it possible to provide high-densi ty, small-sized hybrid ICs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.

2n0404

Contextual Info: IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

d2455

Contextual Info: S T U/D2455P LS S amHop Microelectronics C orp. Dec 30, 2005 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -55V -24 R DS ON ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.

sw1 band sw2 receiver am mw

Abstract: pec 2329
Contextual Info: 05/07/03 10:00 AM TERRY SPI/I2C Compatible, Temperature Sensor, 4-Channel ADC and Quad Voltage Output DAC ADT7516/ADT7517/ADT7518* FEATURES ADT7516—Four 12-Bit DACs ADT7517—Four 10-Bit DACs ADT7518—Four 8-Bit DACs Buffered Voltage Output Guaranteed Monotonic by Design over All Codes