JMC5701
Abstract: GPS-101-2
Contextual Info: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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pcs61061-877-goldmos1522-ptfjmc5701+1gps-101-2
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Contextual Info: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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Contextual Info: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and
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jmc5701220ohm220ztr1-877-goldmos+11522-ptf
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RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
Abstract: G200 JMC5701 transistor l 2050
Contextual Info: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS ® FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 13 dB gain. Nitride surface passivation and full gold metallization
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jmc5701220ohm220ztr1-877-goldmos+41301-ptfrf npn power transistor 5 watt 2.4 ghzg200transistor l 2050
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JMC5701
Abstract: Y 335
Contextual Info: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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pcs6106-nd220qbk-nd1-877-goldmos1522-ptf+2jmc5701y 335
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JMC5701
Abstract: 466W capacitor 30 pf
Contextual Info: PTF 10053 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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p4525-ndpcs6106-nd220qbk-nd1-877-goldmos+41522-ptfjmc5701466wcapacitor 30 pf
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702 P TRANSISTOR
Abstract: 702 Z TRANSISTOR G200 JMC5701 ghz 100 watts amplifier circuit diagram capacitor 0.1uf DIGIKEY resistor 220ohm
Contextual Info: GOLDMOS PTF 10041 Field Effect Transistor 12 Watts, 1.99 GHz Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and
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jmc5701220ohm220ztr1-877-goldmos+71522-ptf702 p transistor702 z transistorg200ghz 100 watts amplifier circuit diagramcapacitor 0.1uf digikeyresistor 220ohm
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