DBW1 Search Results

Contextual Info: no; C -D O m 2 1 e> Q> contact T-DBIT20-Ì00102 BAOK INSULATOR i-D c m -B v m FRONT INSULATOR l-D C m -FA2K00 S-DBW10-B15102 a> BACfC SHELL S-DBW20-F15202 Q> FRONT SHELL S-DBW2D—F15I0Z 9 1 5 1 1 1 1 1 GOLD FLASH TIN PLATED NICKEL PLATED TIN PLATED 2 3 4

Contextual Info: 2 1 _ tì □ □ □ □ □ ö - 1-, 1-1- 1 .— 1— ^ 1— 1— 1 27.50 *- @ S«CK INSULATOR front insulator BACK SHELL FRONT SHELL 1 l-DCWt0-BAÌG00 I-DPWIO-FAIOXI S-DBW10-B15102 S-DBWI0-FI52Q2 S-DBWI0-FI5102 1 1 1

2 pin ir led receiver

Abstract: RC-6 receiver PC87108 Nec Infrared protocol decoder
Contextual Info: August 1998 PC87108AVHG/PC87108AVJE Advanced UART and Infrared Controller General Description Features The PC87108A is a serial communications device with infrared capability. It supports 6 modes of operation and is backward compatible with the 16550 and 16450. The operational

CMP14

Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM71-10134-1E FR 60 32-BIT MICROCONTROLLER MB91470/480 Series HARDWARE MANUAL FR 60 32-BIT MICROCONTROLLER MB91470/480 Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

inverter circuit diagram toshiba a100

Abstract: str 6856 "spindle motor" DP8473 IEEE1284 N82077 PC87338 PC97 PC97338 PD765A
Contextual Info: PC87338/PC97338 ACPI 1.0 and PC97 Compliant SuperI/O General Description Differences between the PC87338 and PC97338 are indicated in italics. These differences are summarized in Appendix A. The PC97338 is a fully ACPI 1.0 and PC97 compliant, ISA based Super I/O. It is functionally compatible with

MB86860

Abstract: 0x80000410 bit3113 SCSN1 sparclite hypersparc BIT3115 S200 SS200 SAD-100
Contextual Info: MB86860 SPARClite SPARClite MB86860 Series Data Sheet Rev.1.2 July 27, 1999 Fujitsu This material is preliminary and is subject to change without notice.  SPARC is a registered trademark of SPARC International, Inc. in the United States and is based on technology developed by Sun

dax6

Abstract: Mobile SDRAM
Contextual Info: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page

EM63A165TS-5G

Abstract: EM63A165TS-6G EM63A165TS-7G EM63A165TS cke 2009 EM63A165
Contextual Info: EtronTech EM63A165TS 16M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • Fast access time from clock: 4.5/5.4/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation Internal pipelined architecture

V54C3128164VAT

Contextual Info: V54C3128164VAT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 7PC 7 8PC System Frequency fCK 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

V54C3128

Contextual Info: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

Contextual Info: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns

Contextual Info: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2

V54C3128

Contextual Info: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

V54C3128

Contextual Info: V54C3128 16/80/40 4VC 128Mbit SDRAM 3.3 VOLT, TSOP II / BGA PACKAGE 8M X 16, 16M X 8, 32M X 4 5 6 7PC 7 10 System Frequency (fCK) 200 MHz 166 MHz 143 MHz 143 MHz 100 MHz Clock Cycle Time (tCK3) 5 ns 6 ns 7 ns 7 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

P-TSOPII-54

Abstract: caz smd PC133 registered reference design
Contextual Info: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10

54BALL

Abstract: V54C3128
Contextual Info: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

SMD MARKING T20

Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
Contextual Info: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge

STR t 6153

Abstract: OR-2185 LBGD nec upd765 application note "Barium Ferrite"
Contextual Info: To all our customers We are pleased to inform you that National Semiconductor Corporation's Advanced PC APC Division joined Winbond Electronics Corporation on May 5th 2005. As a result, in this document “National Semiconductor Corporation” and “National” should be understood as