DATASHEETS DIODE 1N5819 Search Results

1N5819CSM4

Contextual Info: SCHOTTKY RECTIFIER DIODE 1N5819CSM4 • Hermetic Ceramic Surface Mount Package MO-041BA • VRRM = 40V, IF = 1.0A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VRRM VRWM IF(AV)

q217

Contextual Info: SCHOTTKY RECTIFIER DIODE 1N5819CSM4 • Hermetic Ceramic Surface Mount Package MO-041BA • VRRM = 40V, IF = 1.0A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VRRM VRWM IF(AV)

Contextual Info: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*

1N5819UR-1

Abstract: 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1
Contextual Info: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.

1N5819 sensitron

Abstract: 1N5819UR-1 1N5819-1 DO-213AB
Contextual Info: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. C HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.

Contextual Info: SCHOTTKY RECTIFIER DIODE 1N5819D2A / 1N5819D2B • • • • • • High Surge Capability Extremely Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5A” / “B-MELF” Package† For Use in Low Voltage, High Frequency Inverters,

1N5819DLCC2

Abstract: B-MELF
Contextual Info: SCHOTTKY RECTIFIER DIODE 1N5819DLCC2 • • • • • • High Surge Capability Extremely Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5A” / “B-MELF” Package† For Use in Low Voltage, High Frequency Inverters,

1N5819* diode

Abstract: LE17 MIL-PRF19500 QR217 1n5819 melf
Contextual Info: SCHOTTKY RECTIFIER DIODE 1N5819D2A / 1N5819D2B • • • • • • High Surge Capability Extremely Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5A” / “B-MELF” Package† For Use in Low Voltage, High Frequency Inverters,

Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

1N5810 diode

Abstract: 1N5810 DIODE 1N5819 Dip 1N5817 1N5819 DO-204AL JESD22-B102 J-STD-002
Contextual Info: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL / DO-41 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop

1N5810 diode

Contextual Info: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL DO-41 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop

DIODE Schottky 1n5819 PACKAGE

Contextual Info: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL DO-41 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop

1N5810 diode

Contextual Info: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL DO-41 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop

MBR130P

Abstract: MBR120P
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.

1N5810 diode

Contextual Info: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL / DO-41 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop

Contextual Info: 1N5817, 1N5818, 1N5819 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation

VS-1N5819TR-M3

Abstract: VS-1N5819-M3 1n5819 vishay make
Contextual Info: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength

Contextual Info: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength

VS-1N5819TR-M3

Abstract: VS-1N5819-M3
Contextual Info: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength

1n5819

Contextual Info: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength

1.1N5819

Abstract: 1n5819 melf 1N5819UR-1 d 2038 datasheets diode 1n5819 1N5819-1 SS5819UR-1 DO-213AB SS5819-1 PIV RATING 14 V DIODE
Contextual Info: SS5819-1 SS5819UR-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. - HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.

5819-1

Abstract: SS5819UR-1 1N5819UR-1 1N5819-1 DO-213AB SS5819-1
Contextual Info: SS5819-1 SS5819UR-1 SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.

melf diode D-5A

Abstract: melf diode marking MELF pad layout marking diode D2B gold melf QR217 1N4460US 1N5806US 1N5819 LE17
Contextual Info: DIODE LEADLESS CHIP CARRIER DLCC2 • Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “MELF-5.1 D-5A ” / “A-MELF” packages† • Designed For High Reliability Military, Aerospace and Space Applications

Contextual Info: AP1603 STEP-UP DC/DC CONVERTER General Description Features • • • • • • • A Guaranteed Start-Up from less than 0.9 V High Efficiency Low Quiescent Current Less Number of External Components needed Low Ripple and Low Noise Space Saving Lead-Free Packages: SOT26