la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492
|
PDF
|
TRANSISTOR GENERAL DIGITAL L6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
|
Original
|
bfg35ot223msb002r77/03/pp14+2771-bfg35-t/rtransistor general digital l6
|
PDF
|
BFG35
Abstract: TRANSISTOR GENERAL DIGITAL L6 BFG35 amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
|
Original
|
bfg35ot223msb002r77/03/pp14+2transistor general digital l6bfg35 amplifier
|
PDF
|
2sc1275
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that
|
OCR Scan
|
2sc19272sc1275 |
PDF
|
2SC3355
Abstract: transistor 2sc3355 and application PA33 marking PA33
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS
|
Original
|
2sc3355transistor 2sc3355 and applicationpa33marking pa33 |
PDF
|
nec 2561
Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to
|
Original
|
2sc53372sc3356nec 2561nec 2561 transistor+72561 nec2561 a necnec semiconductor 2561transistor nec 2561p1093100mhz200mhz
|
PDF
|
2SC3356
Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
|
Original
|
2sc3356ic nec 555transistor 1431 tmarking 544 low noise amplifier |
PDF
|
2SA1424
Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage
|
Original
|
2sa19782sc23512sa1424nec 2532+3276-137npn transistor mhz s-parameter2sc2351 equivalent
|
PDF
|
A 564 transistor
Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
|
OCR Scan
|
2sc4227sc-70a 564 transistor3181 r33+1transistor a 564
|
PDF
|
philips ferrite 4b1
Abstract: 12NC philips BDT91 BY239 LLE18300X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18300X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18300X FEATURES QUICK REFERENCE DATA
|
Original
|
m3d159lle18300xsca63125002/00/03/pp12+4philips ferrite 4b112nc philipsbdt91by239
|
PDF
|
equivalent of SL 100 NPN Transistor
Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA
|
Original
|
m3d159lle18040xsca63125002/00/02/pp12+9equivalent of sl 100 npn transistortransistor cq 817transistor 648sl 100 npn transistorbdt23905apiphilips ferrite material specificationsby2395344 transistor
|
PDF
|
transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
|
OCR Scan
|
2sc4227sc-702sc4227-t1transistor nec d 587+23181 r33transistor c 3181
|
PDF
|
2SC2945
Abstract: 2SC2954 tc1458a IC 4025
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for PACKAGE DIMENSIONS low noise wide band amplifier and buffer amplifier of OSC, for VHF
|
Original
|
2sc29542sc2945tc1458aic 4025 |
PDF
|
transistor NEC D 822 P
Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
|
OCR Scan
|
2sc4228transistor nec d 822 pnec d 986transistor nec b 617+3transistor nec d 587r44 markingtransistor d 2624
|
PDF
|
|
|
2SC4092
Abstract: of IC 4013 n NEC NF 932 marking R4
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.
|
Original
|
2sc4092s21e2of ic 4013 nnec nf 932+1marking r4
|
PDF
|
D1802
Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)
|
Original
|
2sb624a2sd596ad1802transistor bv3+1nec marking power amplifier
|
PDF
|
2SD596A
Abstract: transistor DV3 D1788 2SB624
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)
|
Original
|
2sd596a2sb624transistor dv3d1788 |
PDF
|
transistor D 2588
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- Units: mm noise amplifier at VHF, UHF band.
|
OCR Scan
|
2sc4092transistor d 2588 |
PDF
|
transistor c 6093
Abstract: NEC 2533 3059 npn transistor t72 marking 2SC4568 s-parameter s11 s12 s21 10000 IC Marking 812
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4568 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV receiver.
|
Original
|
2sc4568sc-59transistor c 6093nec 2533+43059 npn transistort72 markings-parameter s11 s12 s21 10000ic marking 812
|
PDF
|
MX0912B351Y
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A
|
Original
|
mx0912b351yot439asca53127147/00/02/pp12 |
PDF
|
MX0912B251Y
Abstract: capacitor 470 uF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A
|
Original
|
mx0912b251yot439asca53127147/00/02/pp12+1capacitor 470 uf
|
PDF
|
RX1214B300Y
Abstract: RX1214B300 L-Band
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A
|
Original
|
rx1214b300yot439asca53127147/00/02/pp12+2rx1214b300l-band
|
PDF
|
SC19a
Abstract: SC19 LTE21009R BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A
|
Original
|
lte21009rot440asca53127147/00/02/pp8+3sc19asc19bp317
|
PDF
|
NPN transistor mhz s-parameter
Abstract: T62 marking transistor 1047 2SC3841 LEN-160
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3841 is an NPN silicon epitaxial transistor intended for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver.
|
Original
|
2sc3841npn transistor mhz s-parametert62 markingtransistor 1047+1len-160
|
PDF
|
