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2SC5337 Datasheets (12)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC5337	NEC	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER	Original	PDF	61.83KB	8
2SC5337	NEC	Semiconductor Selection Guide	Original	PDF	3MB	399
2SC5337	NEC	NPN SILICON RF TRANSISTOR	Original	PDF	50.59KB	8
2SC5337-AZ	CEL	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-89	Original	PDF	1.55MB
2SC5337QQ	NEC	NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold	Original	PDF	50.59KB	8
2SC5337QQ-T1	NEC	NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold	Original	PDF	50.59KB	8
2SC5337QR	NEC	NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold	Original	PDF	50.59KB	8
2SC5337QR-T1	NEC	NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold	Original	PDF	50.59KB	8
2SC5337QS	NEC	NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold	Original	PDF	50.59KB	8
2SC5337QS-T1	NEC	NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold	Original	PDF	50.59KB	8
2SC5337-T1	NEC	NPN SILICON RF TRANSISTOR	Original	PDF	50.59KB	8
2SC5337-T1	NEC	New power mini(a product with gain improved of 2SC4536)	Original	PDF	61.84KB	8

2SC5337 Price and Stock

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Renesas Electronics Corporation


Renesas Electronics Corporation 2SC5337-T1 Trans RF BJT NPN 15V 0.25A 4-Pin(3+Tab) SOT-89 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SC5337-T1		146		1	1 $2.85 10 $1.85 100 $1.34 1000 $1.34 10000 $1.34	Buy Now
Quest Components	2SC5337-T1		116			1 $3.75 10 $3.75 100 $1.88 1000 $1.75 10000 $1.75	Buy Now
Renesas Electronics Corporation 2SC5337-AZ RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, NPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SC5337-AZ		8,101			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SC5337 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC4536 Abstract: 2SC5337 2SC5337-T1 105dBuV P1093 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz	Original	2sc5337 2sc4536 2sc5337-t1 105dbuv +1p1093	PDF
NEC 2561 Abstract: NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F 2561 a nec NEC semiconductor 2561 nec 2561 4 pin transistor NEC D 586 Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such.	OCR Scan	2sc5337 2sc3356 nec 2561 nec 2561 transistor +82561 nec transistor nec 2561 nec 2561 h nec d 809 f 2561 a nec nec semiconductor 2561 nec 2561 4 pin transistor nec d 586	PDF
nec 2561 Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356 Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to	Original	2sc5337 2sc3356 nec 2561 nec 2561 transistor +72561 nec 2561 a nec nec semiconductor 2561 transistor nec 2561 p1093 100mhz 200mhz	PDF
transistor s2p Abstract: 2SC4536 2SB804-AUT1-AZ Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5337 Data Sheet NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA	Original	2sc5337 r09ds0047ej0300 2sc4536 2sc5337-t1 +42sc5337-az 2sc5337-t1-az transistor s2p 2sb804-aut1-az	PDF
2SC4536 Contextual Info: Preliminary Data Sheet 2SC5337 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise	Original	2sc5337 2sc4536 r09ds0047ej0300 2sc5337-t1 +22sc5337-az 2sc5337-t1-az	PDF
Nec K 872 Abstract: 574 nec nec 4312 nec 8681 2sc3356 1685 transistor 2SC5337 2SC5337-T1 a 1232 nec TRANSISTOR 2sc3356 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 10 mA, f = 500 MHz	Original	2sc5337 2sc3356 2sc5337-t1 nec k 872 +6574 nec nec 4312 nec 8681 1685 transistor a 1232 nec transistor 2sc3356	PDF
NE461M02 Abstract: 2SC5337 NE461M02-T1 S21E npn 1349 Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz	Original	ot-89 ne461m02 24-hour 2sc5337 +3ne461m02-t1 s21e npn 1349	PDF
mobile phone basic block diagram Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	g0706 px10020ej41v0pf mobile phone basic block diagram pg2158t5k +82sc3357/ne85634 microwave duplexer ne5510279a upc8236 ne3517s03 upg2156 ne662m04 sw spdt	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	r09cl0001ej0100 px10727ej02v0pf fet marking code g5d pg2179tb +8marking code c3e sot-89 marking code c1e mmic marking code c1g mmic 2sc3357/ne85634 pg2163t5n sot-23 g6g pc8230tu marking code c1h mmic	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Contextual Info: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	g0706 px10727ej02v0pf nec mosfet marked v75 nec ga fet marking code t79 +8fet marking code g5d marking code c1g mmic lga 1155 pin diagram pb1507 marking code c1e mmic marking code c1h mmic pc8230tu mmic sot 363 marking code 77	PDF
2SK2396 Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××）品名 µPC8119T アプリケーション移動通信電源電圧電流周波数	Original	x13769xj2v0cd00 pc8119t pc8120t pc8130ta +16pc8131ta pg175ta pc2723t pc3206gr pc2748 pc2745 2sk2396 pc2763 pc1658 ne27283 2sc3545 2sc3357 2sc2757 ne93239 2sc2570a pc2711	PDF
uPD16305 Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.	Original	pd43256a x13769xj2v0cd00 pd750004 pd750006 +15pd750008 pd75p0016 pd750104 pd750106 pd750108 upd16305 upd63724a upc5024 upc5023 2sc1940 upc1237 upd65656 upc458 upc2710 upd65943	PDF
nf025 Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920	Original	x13769xj2v0cd00 950mhz 500mhz pc2794 +13pc1687 pc2744 pc2775/nf025 ne27283 upc27 x-band power transistor 100w ne42484 p147d 2sk2396 upg508 nf025db 2sc5408	PDF
2SC4536 Abstract: 2SC5337 2SC5337-T1 nec 4312 Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	2sc4536 2sc5337 2sc5337-t1 nec 4312	PDF

2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	2sk2500 2sk1543 upd16861gs nec 2sk2500 +6upa1559h transistor nec 2sk2500 2sc4496a mc10087f1 2sa733a upd16861	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4m smd m05 sot23 ne5531 ne352 +4a3 smd sot-343 transistor smd m05 smd transistor m05 transistor smd code 404	PDF
NE461M02 Abstract: NE461M02-T1-AZ 2SC5337 S21E Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz	Original	ot-89 ne461m02 ne461m02-t1-az 2sc5337 +1s21e	PDF
transistor marking T79 ghz Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority	Original	pu10015ej04v0pf transistor marking t79 ghz marking code c1h mmic marking code c3e sot-89 +7upb1507 marking code c1g mmic marking code c1e mmic data book transistors 2sa upc2712 pc3215 transistor 2sa data book	PDF
2SC4536 Abstract: 2SC5337 2SC5337-T1 ic 5209 Contextual Info: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	2sc5337 2sc4536 2sc5337-t1 p10939jj2v0ds +1ic 5209	PDF
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	p14740ee5v0pf00 marking code c1e smd transistor transistor smd marking code s01 fmcw radar +7transistor smd c1y ne92039 g2b 6-pin smd ne582m03 ne3210so1 smd transistor g1-l smd code marking nec 817	PDF
SOT89 Z100 Abstract: nec 8681 NPN transistor 1815 NE461M02 2sC5337 Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • • • NE461M02 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION:	OCR Scan	ot-89 ne461m02 sot89 z100 nec 8681 +2npn transistor 1815 2sc5337	PDF
2SC5743 Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC4091 2SC5937 2sc5747 2sc2570 Contextual Info: 高周波半導体デバイス Microwave Semiconductor Devices W-CDMA用IC（ICs for W-CDMA）・W-CDMA用にシリコン／GaAs MMICを開発中・小型ミニモールドやリードレスQFNなど実装面積の削減に有効なパッケージに搭載	Original	pc8190/8191krx-if pc8194/8195krx-if pg2124th 10tssop +1210-pin fax044435-9608 2sc5743 2sc5600 2sc5533 2sc5693 2sc5678 2sc5744 2sc4091 2sc5937 2sc5747 2sc2570	PDF
uPD72002-11 Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508 Contextual Info: 品名別検索検索ツール 1. ツールバーのアイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して，検索 F をクリックしてください。	Original	pd43256a x13769xj2v0cd00 pd750004 pd750006 +15pd750008 pd75p0016 pd750104 pd750106 pd750108 upd72002-11 upd16305 upc1237 upc1701 upd65656 2sd1392 2sb1099 upd65625 upd78f0841 upg508	PDF
ic isl 887 Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03 Contextual Info: RF & マイクロ波デバイスシステムブロック www.renesas.com 2010.04 目次 1. はじめに •··········································································································································· 3	Original	pa86x pg2158t5k pc3218t5y nes1823m-45 +16nes1823m-180 nes1823m-240 nes1823s-45 nes1823s-90 r09ca0001jj0100 px10020jj42v0pf ic isl 887 2sc5508 ne3514 sw spdt ne3515s02 ne5510279a nesg2031m05 pg2179 ne3509m04 ne3517s03	PDF

2SC5337 Search Results

2SC5337 Datasheets (12)

2SC5337 Price and Stock

Renesas Electronics Corporation 2SC5337-T1

Renesas Electronics Corporation 2SC5337-AZ

2SC5337 Datasheets Context Search

2SC4536

NEC 2561

nec 2561

transistor s2p

2SC4536

Nec K 872

NE461M02

mobile phone basic block diagram

FET marking code g5d

nec mosfet marked v75

2SK2396

uPD16305

nf025

2SC4536

2SK2500

SMD M05 sot23

NE461M02

transistor marking T79 ghz

2SC4536

marking code C1E SMD Transistor

SOT89 Z100

2SC5743

uPD72002-11

ic isl 887