DARLINGTON IB 0.1A Search Results

DARLINGTON IB 0.1A Result Highlights (5)

Part	Manufacturer	Description	Download
ULS2003H/R	Rochester Electronics LLC	ULS2003 - High Voltage High Current Darlington Array	PDF
ULS2022R/B	Rochester Electronics LLC	ULS2022 - High Voltage High Current Darlington Array	PDF
ULQ2003ADRG4	Texas Instruments	Darlington Transistor Arrays 16-SOIC
ULN2003ANS	Texas Instruments	High-Voltage, High-Current Darlington Transistor Arrays 16-SO
ULQ2003ADG4	Texas Instruments	Darlington Transistor Arrays 16-SOIC

DARLINGTON IB 0.1A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SDH02 Contextual Info: SDH02 NPN Darlington With built-in flywheel diode Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C Ratings Unit Symbol VCBO 120 V ICBO VCEO 100 V IEBO VEBO 6 V VCEO 100 IC 1.5 A hFE 2000 ICP 2.5 (PW≤1ms, Du≤10%) A IB	Original	SDH02 SDH02	PDF
Contextual Info: T O SH IB A MP4507 TOSHIBA PO W ER TRANSISTOR M OD ULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING	OCR Scan	MP4507	PDF
STA473A Contextual Info: STA473A NPN Darlington General purpose Absolute maximum ratings External dimensions D Unit Symbol VCBO 120 V ICBO VCEO 100 V IEBO VEBO 6 V VCEO 100 IC 2 A hFE 2000 ICP 4 PW≤1ms, Du≤25% A IB 0.5 A 4 (Ta=25°C) (Ta=25°C) Specification min typ max Ratings	Original	STA473A 10-pin) STA473A	PDF
SMA4036 Contextual Info: SMA4036 Absolute maximum ratings NPN Darlington With built-in flywheel diode Ratings Unit Symbol VCBO VCEO VEBO IC ICP IB IF IFSM VR 120 100 6 2 4 PW≤1ms, Du≤50% 0.2 2 (PW≤0.5ms, Du≤25%) 4 (PW≤10ms, Single pulse) 120 4 (Ta=25°C) 20 (Tc=25°C)	Original	SMA4036 PW10ms, 15-pin) SMA4036	PDF
TIP120 Abstract: TIP122 Darlington 30A tip120 darlington equivalent of TIP122 tip121 tip122v Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP120/121/122 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP125/126/127 APPLICATIONS	Original	TIP120/121/122 O-220C TIP125/126/127 TIP120 TIP121 TIP122 TIP120 TIP122 Darlington 30A tip120 darlington equivalent of TIP122 tip121 tip122v	PDF
equivalent of TIP122 Abstract: TIP120 TIP122 DARLINGTON 3A 100V npn tip122 data TIP121 Contextual Info: Inchange Semiconductor Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type TIP125/126/127 APPLICATIONS	Original	TIP120/121/122 O-220C TIP125/126/127 TIP120 TIP121 TIP122 equivalent of TIP122 TIP120 TIP122 DARLINGTON 3A 100V npn tip122 data TIP121	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF
TIP125 Abstract: TIP126 TIP127 Contextual Info: Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 DESCRIPTION ・With TO-220C package ・DARLNGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type TIP120/121/122 APPLICATIONS	Original	TIP125/126/127 O-220C TIP120/121/122 TIP125 TIP126 TIP127 TIP125 TIP126 TIP127	PDF
TIP125 Abstract: TIP127 TIP126 Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 DESCRIPTION •With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP120/121/122 APPLICATIONS ·Designed for general–purpose amplifier	Original	TIP125/126/127 O-220C TIP120/121/122 TIP125 TIP126 TIP127 -100V, TIP125 TIP127 TIP126	PDF
BU920 Abstract: Designed for automotive ignition applications NPN Transistor 1A 400V npn transistor 400V Saturation npn transistors 400V 1A Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS Ta=25℃	Original	140mA BU920 Designed for automotive ignition applications NPN Transistor 1A 400V npn transistor 400V Saturation npn transistors 400V 1A	PDF
npn transistors 400V 1A Abstract: Designed for automotive ignition applications Darlington NPN Silicon Diode darlington power transistor NPN Transistor 1A 400V npn transistor 400V BU920T Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS Ta=25℃	Original	140mA npn transistors 400V 1A Designed for automotive ignition applications Darlington NPN Silicon Diode darlington power transistor NPN Transistor 1A 400V npn transistor 400V BU920T	PDF
automotive ignition tip162 Abstract: TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16 Contextual Info: TIP162 Darlington Power Transistor NPN Silicon Power Darlington Transistors are designed for use in automotive ignition, switching and motor control applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 380V (Minimum). • Collector-Emitter Saturation Voltage	Original	TIP162 automotive ignition tip162 TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16	PDF
TIP127 Application Note Abstract: TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A	Original	-100V TIP122 -20mA -100V, TIP127 TIP127 Application Note TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF

TRANSISTOR MJ11029 Abstract: transistor mj11028 equivalent MJ11028 MJ11029 TRANSISTOR MJ11028 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11028	Original	MJ11028 -250mA 500mA -500mA TRANSISTOR MJ11029 transistor mj11028 equivalent MJ11028 MJ11029 TRANSISTOR MJ11028	PDF
transistor mj11032 Abstract: NPN transistor Ic 50A darlington complementary 120v MJ11032 MJ11033 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11033	Original	MJ11033 250mA 500mA transistor mj11032 NPN transistor Ic 50A darlington complementary 120v MJ11032 MJ11033	PDF
PNP TRANSISTOR 1k Abstract: transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A	Original	-120V MJ11016 -120V; PNP TRANSISTOR 1k transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016	PDF
mj11011 Abstract: transistor 20a MJ11012 20A pnp Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A	Original	MJ11012 mj11011 transistor 20a MJ11012 20A pnp	PDF
TRANSISTOR MJ11028 Abstract: transistor mj11028 equivalent SILICON COMPLEMENTARY transistors darlington MJ11028 MJ11029 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11029	Original	MJ11029 250mA 500mA TRANSISTOR MJ11028 transistor mj11028 equivalent SILICON COMPLEMENTARY transistors darlington MJ11028 MJ11029	PDF
darlington npn 90v Abstract: darlington transistor 90v transistor 20a MJ11013 MJ11014 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A	Original	MJ11013 darlington npn 90v darlington transistor 90v transistor 20a MJ11013 MJ11014	PDF
darlington transistor 90v Abstract: MJ11030 MJ11031 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11030	Original	MJ11030 -250mA 500mA -500mA darlington transistor 90v MJ11030 MJ11031	PDF
NPN transistor Ic 50A Abstract: darlington transistor 90v darlington npn 90v MJ11030 MJ11031 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11031	Original	MJ11031 250mA 500mA NPN transistor Ic 50A darlington transistor 90v darlington npn 90v MJ11030 MJ11031	PDF
MJ11032 Abstract: MJ11033 transistor MJ11032 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11032	Original	-120V MJ11032 -250mA 500mA -500mA -120V; MJ11032 MJ11033 transistor MJ11032	PDF
COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS Abstract: transistor 20a MJ11013 MJ11014 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A	Original	MJ11014 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS transistor 20a MJ11013 MJ11014	PDF

DARLINGTON IB 0.1A Search Results

DARLINGTON IB 0.1A Result Highlights (5)

DARLINGTON IB 0.1A Datasheets Context Search

SDH02

STA473A

SMA4036

TIP120

equivalent of TIP122

2SA1941 amp circuit

TIP125

TIP125

BU920

npn transistors 400V 1A

automotive ignition tip162

TIP127 Application Note

2sC5200, 2SA1943

TRANSISTOR MJ11029

transistor mj11032

PNP TRANSISTOR 1k

mj11011

TRANSISTOR MJ11028

darlington npn 90v

darlington transistor 90v

NPN transistor Ic 50A

MJ11032

COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS