DARLINGTON AMPLIFIERS Search Results

Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

2SD1843

Abstract: diode dumper
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD336 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS

Contextual Info: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS 2 DESCRIPTION The BDX87C is a silicon Epitaxial-Base NPN

MJ11021

Abstract: mj11011 MJ11017 MJ11018 MJ11019 MJ11020 MJ11022 transistor revers characteristic transistor MJ11020
Contextual Info: ÆàMOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS PNP NPN MJ11017 MJ11018 MJ11019 MJ11020 MJ11021 MJ11022 .designed for use as general purpose amplifiers,low frequency switching and motor control applications. FEATURES: * High Gain Darlington Performance

D39C2

Abstract: D39C3 D38L3 D38L1 D39C1 lBX1000 D38L1-6 D38L2 D39C1-6 complementary npn-pnp power transistors
Contextual Info: Silicon Transistors Complementary Darlington 123 D38L1-6 The General Electric D38L1-6 and D39C1-6 are Silicon Planar, Epi­ taxial, NPN-PNP complimentary Darlington amplifiers. These devices are designed for medium current-amplifier and switching applications.

diode SOT-82 package

Abstract: BD336
Contextual Info: BD336 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The BD336 is a silicon epitaxial-base PNP

MPSA25

Abstract: BC517 CBE 2N6426 2N6427 BC372 BC373 BC617 BC618 MPSA12 MPSA13
Contextual Info: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Darlington Transistors (TO-92) Darlington amplifiers are cascade transistors used in applications requiring very high gain and input impedance. These devices have monolithic construction. Absolute M ax. Rating at 2 5 °C

monolithic amplifier MAR

Abstract: ADS2001 ERA-5-ED9351 current amplifier note darlington HP54835A monolithic amplifiers
Contextual Info: APPLICATION NOTE Transient Protection of Darlington gain block amplifiers AN-60-034 1. Introduction Monolithic wideband amplifiers are widely used in the RF and microwave systems. Many of these amplifiers use Darlington configuration. Mini-Circuits monolithic amplifiers with model

bd648

Abstract: bd650 bd649 BD652 BD644 BD65 BD643 BD645 BD646 BD647 BD649
Contextual Info: BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.

2SB601

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High-DC current gain due to Darlington connection • Low collector saturation voltage

BD651

Contextual Info: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching

NEC RELAY

Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct

NEC diode

Abstract: transistor marking 7D 2SD1695 C11531E
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and

Contextual Info: SCS-THOMSON [IDÜMiLiCTIM « SGSD100 SGSD200 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: . GENERAL PURPOSE SWITCHING APPLICATION

mj4032

Abstract: MJ4035 SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier general purpose of SILICON diode
Contextual Info: MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING

Contextual Info: BDT61F; 61AF BDT61BF; 61CF _/ V SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.

2SD2161

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and

2N5307

Contextual Info: 2N 5307 & 2N 5308 NPN DARLINGTON GENERAL DESCRIPTION : A M P IFIER MECHANICAL OUTLINE TO-92B The 2N 5307 & 2N 5308 are NPN silicon planar epitaxial Darlington amplifiers. The devices are suitable for preamplifier input stages requir­ ing high input impedance or very high

D1486

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATION driven from the output of an IC. This transistor is ideal for OA and FA

D44E3

Abstract: MJD44E3
Contextual Info: ON Semiconductort MJD44E3 * Darlington Power Transistor *ON Semiconductor Preferred Device DPAK For Surface Mount Application NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS . . . for general purpose power and switching output or driver stages

Contextual Info: SGS-THOMSON MJ4032 MJ4035 RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

A004R

Abstract: ADA-4543 ADA-4543-BLK ADA-4543-TR1 ADA-4543-TR2 ID 80 C 1541 ada-4543-blkg
Contextual Info: Agilent ADA-4543 Silicon Bipolar Darlington Amplifier Data Sheet Features • Small Signal gain amplifier • Operating frequency DC – 2.5 GHz The Darlington feedback structure provides inherent broad bandwidth performance, resulting in useful operating frequency