D471N Search Results

D428N

Abstract: D471N D2201N D1049N D2228N D4457N D448N D5807N D5809N D660N
Contextual Info: Overview Rectifier in Disc Housings VRRM – Concept 9000 V D471N D2601N 6500 V D711N D1481N D749N D1800N D3001N 5800 V 4800 V 1500 VRMS 4600 V D1809N Ceramic disc D2201N 4500 V D1069N 4400 V Epoxy disc 4000 V D3501N D849N D269N 3600 V 1000 VRMS High Power - Discs

eupec igbt

Abstract: kuka-2003-inhalt.qxd Eupec Power Semiconductors igbt eupec D1049N D2228N D428N D4457N D448N D5807N
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 45 Overview Rectifier in Disc Housings VRRM – Concept 9000 V D471N 6500 V D711N D1481N D749N D1800N D2601NH D2601N D3001N 5800 V 4800 V 1500 VRMS 4600 V D1809N Ceramic Disc D2201N 4500 V D1069N 4400 V Epoxy Disc

Contextual Info: Technische Information / technical information Netz-Gleichrichterdiode Rectifier Diode D471N Key Parameters VRRM 9000 V IFAVM 550 A TC=100 °C IFSM 3570A (TC=55°C) 11000 A VT0 1,04 V rT 1,8 mΩ RthJC 28 K/kW Clamping Force 10 … 16 kN Max. Diameter 58,5 mm

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

D711N

Abstract: D1481N D2601N D3001N D471N Dioden eupec igbt 150kV thyristor gct thyristor
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company Dioden zu IGBT- und GCT-Umrichtern 1. Anwendungen Moderne Frequenzumrichter hoher Leistungen > ca. 1 MW werden in zunehmenden Maße mit IGBT- oder GCT- (Gate Controlled Thyristor) Bauelementen realisiert.

RECTIFIER DIODE D100

Abstract: IFM D100 T75 TYPE 2000 106 35K 721 106 35K 106 35K 045 D748N-2800 DSW27 AL 2450 dv GTO MODULE
Contextual Info: IGBT and GCT – Freewheeling Diodes Type V DRM V D 911 SH D 1031 SH D 1331 SH • D 1641 SX ■ D 1181 SX ■ D 1441 SX D 931 SH D 1131 SH D 1951 SH V(D)D *) kV Tc = 25 typ. I(FSM) kA sin, 10 ms Tvj max ∫i2dt A2s • 103 sin, 10 ms Tvj max V(F)/I(FM) V/2,5 kA

HIGH VOLTAGE DIODE kv

Abstract: freewheeling diodes 12-pulse medium frequency inverter series connection igbt eupec igbt EUPEC Thyristor gct thyristor D1481N D2601N D3001N
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company Diodes for IGBT and GCT converters 1. Applications Modern high power frequency converters > approx. 1 MW are increasingly realised with IGBT or GCT (Gate Controlled Thyristor) devices. Here, the line side power converter is

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

EUPEC Thyristor

Abstract: Eupec Power Semiconductors rectifire diode rectifire D2601N T4301N d911sh design sine wave power inverter T1601 D1481N
Contextual Info: Application Note Date: 11.04.2005 AN-Number: AN2004-04 Page 1 Department:SM PHP Case non rupture current High power Semiconductors DIN IEC 60 747 – 2 Diodes and DIN IEC 747 – 6 (Thyristors) The case non rupture current is the current value by which the housing neither

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

D1331SH45T

Abstract: D1131SH65T D931SH65T D1481N D2601N D3001N D471N D711N 150kV thyristor d471
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company Dioden zu IGBT- und GCT-Umrichtern 1. Anwendungen Moderne Frequenzumrichter hoher Leistungen > ca. 1 MW werden in zunehmenden Maße mit IGBT- oder GCT- (Gate Controlled Thyristor) Bauelementen realisiert.

GT 1081

Abstract: T75 TYPE 2000 106 35K 10 35L DIODE RECTIFIER DIODE D100 kuka-2003-inhalt.qxd T75 550 106 35K 045 Eupec Power Semiconductors 588 n 250 f 101
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 35 Pulsed Power Applications Type T 4003 NH T 1503 NH T 2563 NH D 2601 NH VBO kV VRRM kV VTM/ITM V/kA ITSM kA di/dtcr on A/µs 5,2 7,5 … 8 7,5 … 8 9 1,8/6 3,0/4 2,95/6 4,9/4 100 40 56 45 5000 5000 5000 VDRM