D2601N Search Results

D428N

Abstract: D471N D2201N D1049N D2228N D4457N D448N D5807N D5809N D660N
Contextual Info: Overview Rectifier in Disc Housings VRRM – Concept 9000 V D471N D2601N 6500 V D711N D1481N D749N D1800N D3001N 5800 V 4800 V 1500 VRMS 4600 V D1809N Ceramic disc D2201N 4500 V D1069N 4400 V Epoxy disc 4000 V D3501N D849N D269N 3600 V 1000 VRMS High Power - Discs

eupec igbt

Abstract: kuka-2003-inhalt.qxd Eupec Power Semiconductors igbt eupec D1049N D2228N D428N D4457N D448N D5807N
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 45 Overview Rectifier in Disc Housings VRRM – Concept 9000 V D471N 6500 V D711N D1481N D749N D1800N D2601NH D2601N D3001N 5800 V 4800 V 1500 VRMS 4600 V D1809N Ceramic Disc D2201N 4500 V D1069N 4400 V Epoxy Disc

D2601N90T

Abstract: D2601NH D2601NH90T 3xD2601NH90T crowbar 4094V D2601NH90
Contextual Info: Pulse Generator with Diodes D2601NH 90T at company Phoenix Contact C.Schneider, Hr.Schöneberger Phoenix Contact , J.Przybilla eupec GmbH Max-Plank-Straße 5 D-59581 Warstein, Germany Telephone number +2902 764-1762 / Fax number –1610 Carsten.Schneider@eupec.com

Contextual Info: Technische Information / technical information Netz-Gleichrichterdiode Rectifier Diode D2601N Key Parameters VRRM enndaten 9000 V IFAVM 2200 A TC=100 °C IFSM VT0 52000 3570A A (TC=55°C) 0,944 V rT 0,414 mΩ RthJC 7,5 K/kW Clamping Force 36 … 52 kN Max. Diameter

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

LFTD18

Abstract: T1503NH75TS02 T553N70TOH thyristor dc controller schematic T2563N75 T553N70 Thyristor 6kV 13-kV fence light HFBR2815
Contextual Info: Abstract Number #10067 Direct Light-Triggered Solid-State Switches For Pulsed Power Applications J. Przybilla1 , R. Keller1), U. Kellner1), H.-J. Schulze2), F.-J. Niedernostheide2), T. Peppel3) 1) eupec GmbH, Max-Plank-Str. 5, 59581 Warstein, Germany 2 )Infineon AG, Balanstr. 59, D-81541 Munich, Germany

1N1183A

Abstract: 1N1184A 1N1186A 1N1187A 1N1195A 1N1196A 1N1197A 1N1198A 1N248C 1N249C
Contextual Info: RECTIFIERS continued A v. RCA TYPE Forward C urrent Surge T em p.-T c °C •fsm A (o A Package Voltage Tem p. Range Voltage D rop (See Operating V RRM «F lo V V A p. 28) °C S TA N D A R D R E C T IF IE R S with Stud-Type Packages $ (continued) D 15 types (continued)

MAA 723

Abstract: D3202y rca diac D3202y diac diac D3202U D3202U DIACs D2103S LA 6520 1N3879 1N3899
Contextual Info: Rectifier Product Matrix continued Fast-Recovery Types V T 'o 50 100 200 300 400 500 600 800 1000 m DO-15 DO-26 A «FSM V RRM<V > Î if Î RCA Rectifiers b. DO-4 35A D 2601F D 26 01 _! D2601B 1A 50A D2201 F D 22 01A D 2201B D2601 D D 2201D D2601M D2601 N

D711N

Abstract: D1481N D2601N D3001N D471N Dioden eupec igbt 150kV thyristor gct thyristor
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company Dioden zu IGBT- und GCT-Umrichtern 1. Anwendungen Moderne Frequenzumrichter hoher Leistungen > ca. 1 MW werden in zunehmenden Maße mit IGBT- oder GCT- (Gate Controlled Thyristor) Bauelementen realisiert.

RECTIFIER DIODE D100

Abstract: IFM D100 T75 TYPE 2000 106 35K 721 106 35K 106 35K 045 D748N-2800 DSW27 AL 2450 dv GTO MODULE
Contextual Info: IGBT and GCT – Freewheeling Diodes Type V DRM V D 911 SH D 1031 SH D 1331 SH • D 1641 SX ■ D 1181 SX ■ D 1441 SX D 931 SH D 1131 SH D 1951 SH V(D)D *) kV Tc = 25 typ. I(FSM) kA sin, 10 ms Tvj max ∫i2dt A2s • 103 sin, 10 ms Tvj max V(F)/I(FM) V/2,5 kA

HIGH VOLTAGE DIODE kv

Abstract: freewheeling diodes 12-pulse medium frequency inverter series connection igbt eupec igbt EUPEC Thyristor gct thyristor D1481N D2601N D3001N
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company Diodes for IGBT and GCT converters 1. Applications Modern high power frequency converters > approx. 1 MW are increasingly realised with IGBT or GCT (Gate Controlled Thyristor) devices. Here, the line side power converter is

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

4021N

Abstract: D 471 ft408 SD1121 D 3001 N 60 T D2601NH NT2401 D798 T 1709 D438
Contextual Info: kuka-2006-de-inhalt.qxd IGBT 07.02.2006 12:17 Uhr Seite 124 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 124 Clamping Force kN and Disc Diameter (mm) Typ T 178 N T 201 N T 218 N T 298 N T 308 N T 348 N T 358 N T 378 N T 379 N T 380 N

EUPEC Thyristor

Abstract: Eupec Power Semiconductors rectifire diode rectifire D2601N T4301N d911sh design sine wave power inverter T1601 D1481N
Contextual Info: Application Note Date: 11.04.2005 AN-Number: AN2004-04 Page 1 Department:SM PHP Case non rupture current High power Semiconductors DIN IEC 60 747 – 2 Diodes and DIN IEC 747 – 6 (Thyristors) The case non rupture current is the current value by which the housing neither

S3901S

Abstract: D1201P 1N538 150a gto 1N539 S3900E 1N5214 S3900S S3900SF S3901M
Contextual Info: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

D1331SH45T

Abstract: D1131SH65T D931SH65T D1481N D2601N D3001N D471N D711N 150kV thyristor d471
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company Dioden zu IGBT- und GCT-Umrichtern 1. Anwendungen Moderne Frequenzumrichter hoher Leistungen > ca. 1 MW werden in zunehmenden Maße mit IGBT- oder GCT- (Gate Controlled Thyristor) Bauelementen realisiert.

GT 1081

Abstract: T75 TYPE 2000 106 35K 10 35L DIODE RECTIFIER DIODE D100 kuka-2003-inhalt.qxd T75 550 106 35K 045 Eupec Power Semiconductors 588 n 250 f 101
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 35 Pulsed Power Applications Type T 4003 NH T 1503 NH T 2563 NH D 2601 NH VBO kV VRRM kV VTM/ITM V/kA ITSM kA di/dtcr on A/µs 5,2 7,5 … 8 7,5 … 8 9 1,8/6 3,0/4 2,95/6 4,9/4 100 40 56 45 5000 5000 5000 VDRM