D3S 58 Search Results

BLX94C

Abstract: BLX94A BLX94
Contextual Info: L^E » N AMER PHILIPS/DISCRETE • bfc.53T31 D021b3E IAPX D3S BLX94A BLX94C J BLX94A IS MAINTENANCE TYPE U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable fo r transmitting applications in class-A, B or C in the u.h.f. range fo r a nominal supply voltage up to 28 V . The transistors are resistance stabilized and tested

HD63265

Abstract: 5.25 floppy interface HD63265P HD63265FP FLOPPY DISK Clk16MHZ
Contextual Info: H D63265 -Floppy Disk Controller FDC HD63265 is a floppy disk controller (FDC) VLSI cir­ cuit which is capable of controlling u p to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a microprocessor in a 68 or 80-series m icrocom puter

NJU6511

Abstract: JUG-51 HJU6501 HJU6511 HJU651IB JUB501 JUG511 KJU6511XC NJU6511D v3160
Contextual Info: v4, D Vi­ li O < < < < < < < < < • íi t -i i r S ü o d s j a % 0 \ T A O 'S mis.fi y mti t & æ ü & t s mizi s h * ¿ > . \ h » t * IÍ»S0IAI-0* mí» diHo/doi • • EE <1 I t ^ A » £ a - V ¡5¡¡f M » M i Ii 8 V- ^ Hl ¡ffi • * vi • I

HD63265P

Abstract: HD63265 765 fdc HD63265FP d2s 28 diode d3s diode 41ES ABE 802 PVDX FDD service
Contextual Info: H D63265-F lo p p y D isk C o n tro lle r FD C HD63265 is a floppy disk controller (FDC) VLSI cir­ cuit w hich is capable of controlling up to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a m icroprocessor in a 68 or 80-series microcomputer

d3s 58

Abstract: D3S 50
Contextual Info: Bi - Directional trigger - DIACS. T h e plastic m aterial carries U /L recognition 94 V-O. ELECTRICAL CHARACTERISTICS Tc B erak o v er V oltage = 25 °C B erakover V oltage Dynam ic B reakover Peak Pulse Symm etry B reakback C u rren t C urrent for lOjus

E-BA8

Abstract: ISOS refer STP2104
Contextual Info: S un M ic ro electro nics July 1997 SEC DATA SHEET SBus-to-EBus Controller D e s c r ip t io n The STP2014 SBus-to-EBus Controller SEC is an interface between the SBus and the EBus that is used for slow I/O devices such as TOD, EPROM, serial port, and keyboard/mouse. The STP2014 also houses the inter­

BYY 56

Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Contextual Info: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C

D3S 50

Abstract: D3S 57
Contextual Info: VG/CA-B Connector Dim ensions Wall Mounting Receptacle CA3100E-B-08 Flange with threaded holes CA3100E-B-09 (Flange with through holes) CA3100E-B-08, -09 designates a wall mounting receptacle, with 90° endbell, cable clam p and telescoping bushing. Modifications see page 10

MTO-3P

Abstract: 2SK2177 SK139 ITO-220 FTO-220
Contextual Info: N-Channel, Enhancement type Absolute Maximum Ratings Type No. Tch [“C] V d ss [V] Electrical Characteristics V gss Id Pt [V] [A] [W] ? S K 1 391 40 6 13&2 25 1393 10 Î3 0 4 250 1395 1396 13 9 7 ±30 150 2062 50 30 R d s on Ciss Crss ton toff (max) (typ)

T0220F

Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

2SK1217

Abstract: 2SK962 2SK1512 MOSFET Modules 2SK1008-01 2SK1010-01 2SK1012-01 2SK1082 2SK1511 2SK1171
Contextual Info: COLLHER SEMICONDUCTOR INC 22307^2 ODGISTT OTT « C O L MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

2SK1082

Abstract: T0220F 2SK1512 T0-220F 2SK1018-01 2SK1084 2SK1388 2SK1217 2SK1090 2SK1276
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss 0 0 900 900 900 900 1000 C h aracteristics (Tc=25°C)

Contextual Info: International IO R Rectifier • • • • • PD - 9.1435B PRELIMINARY IRF7311 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20 V ^DS on = 0.029Î2 Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier

HT1616C

Abstract: HT1617 SW1616M16A
Contextual Info: H T 1 6 1 6 / H T 1 6 1 6 C / H T 1 6 1 7 T im e r w ith D ia le r I n te r f a c e Patent Number: 84545 R.O.C. Patent Pending: 08/214, 079 (U.S.A.) Operating voltage: 1.2V-1.7V • Stop watch • Built-in dialer interface Low operating current: 4|_iA typ.

7975

Abstract: LA 7673 SW1616M16A IC la 7673
Contextual Info: H D L T E K n r Features • • • • • • HT1616/HT1616C/HT1617 Timer with Dialer Interface P a te n t N um ber: 84545 R.O.C. P a te n t P en d in g: 08/214, 079 (U.S.A.) • • • • O perating voltage: 1.2V-1.7V Low operating current: 4|_iA typ.

Contextual Info: Ordering number: EN 5839 M o n o lith ic L in e a r 1C L88M00T Series 3.3 to 12 V, 0.5 A Low Dropout Voltage Regulator Package Dimensions Overview unit : mm The L88MOOT Series are low dropout voltage regulator ICs with output current of 0.5 A. Because they can operate with a

PD916

Contextual Info: PD-9.1615A International TOR Rectifier FA38SA50LC HEXFET Power MOSFET • Fully Isolated Package • Easy to Use and Parallel • Low On-Resistance • Dynamic dv/dt Rating • Fully Avalanche Rated • Simple Drive Requirements • Low Drain to Case Capacitance

AFM02N5-00

Abstract: 2b25 gm 4511 4511 gm AD004T2-00 AD004T2-11 AE002M2-29 VP 16029 AK006R2-01 AK006R2-10
Contextual Info: Low Noise GaAs MESFET Chip AFM02N5-00 Dim ensions in Microns Thickness = 100 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 G H z 0.25 am Ti/Pt/Au Gates Passivated Surface Description Alpha’s AFM 02N 5-00 low noise G aAs M E S FE T Chip

74S590

Abstract: 74S59X
Contextual Info: PRELIMINARY CYM74A590 CYM74S590 CYM74S591 VLSI 82C590 Chip Set Level II Cache Module Family Features Functional Description • Pin-compatible secondary cache module family • Asynchronous CYM74Â590 or syn­ chronous (CYM74S590, CYM74S591) configurations with presence and con­

2D 1002 diode

Abstract: d3s marking DIODE D3S 90 MARKING tAN SOT-23 diode MARKING tAN SOT-23
Contextual Info: PD - 9 .1508C International IOR Rectifier IR L M S 1 5 0 3 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 3 0 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier

BFG96

Contextual Info: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in

434B

Abstract: 82430VX
Contextual Info: CYM74P430B/431B CYM74P434B/435B PRELIMINARY Intel 82430FX,HX,VX PCIset Pipelined L2 Cache Modules * 160-position connector is compatible with all four Keying Options defined in COAST 3.0. • 3.3V compatible inputs/data outputs Features • Secondary cache modules that are

DIODE D3S 90

Contextual Info: P D - 9 .1 6 4 4 Internationa lO R Rectifier IRL1004S/L PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount IRL1004S • Low-profile through-hole (IRL1004L) • Advanced Process Technology • Surface Mount • Ultra Low On-Resistance

DIODE d3s 57

Abstract: D3S 57 diode
Contextual Info: PD - 9.1362A International TOR Rectifier IRFI 520 N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description