D3A TRANSISTOR Search Results
D3A TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
D3A TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MAX11855
Abstract: MAX11856
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10-Bit, 20Msps, MAX1185 10-bit 105mW 20Msps. MAX1185 MAX11855 MAX11856 | |
MAX11855
Abstract: MAX1185ECM MAX4108 MAX1180 MAX1181 MAX1182 MAX1183 MAX1184 MAX1185 bd-9a
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10-Bit, 20Msps, MAX1185 MAX11855 MAX1185ECM MAX4108 MAX1180 MAX1181 MAX1182 MAX1183 MAX1184 MAX1185 bd-9a | |
2-bit flash adcContextual Info: 19-2263; Rev 0; 12/01 Dual 10-Bit, 40Msps, 3V, Low-Power ADC with Internal Reference and Multiplexed Parallel Outputs MAX1186ECM -40°C to +85°C 48 TQFP-EP D3A/B D2A/B 38 37 D5A/B D4A/B 40 39 D7A/B D6A/B 42 41 D9A/B D8A/B 44 43 REFIN REFOUT 45 46 Pin Configuration |
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10-Bit, 40Msps, MAX1186 10-bit 105mW 20MHz 40Msps. 2-bit flash adc | |
DUAL DIODE
Abstract: g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE
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OCR Scan |
OT-23 C2/C20 50MHz FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 DUAL DIODE g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE | |
marking z7
Abstract: Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914
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OCR Scan |
OT-23 BAV70 BZX84-C43 BZX84-C47 BAV99 FMMD109 BAW56 FMMD914 BZX84 FMMD3102 marking z7 Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914 | |
D3A transistorContextual Info: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper |
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MC10E404, MC100E404 MC10E404/100E404 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 AN1568 D3A transistor | |
301 marking code PNP transistor
Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
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OCR Scan |
SC-74) DTA114EKA) DTC114EKA) SC-70) SC-59) 301 marking code PNP transistor Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74 | |
c2021 transistor
Abstract: transistor c2551 potentiometer 1k D9B diode VHC541 C2021 D9B TRANSISTOR OP209 NPN transistor 2n2222A C2551
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AN7852 10-Bit SPT7852 SPT7852 EB7852 1N5712 2N2222A OP291 LTC1152 c2021 transistor transistor c2551 potentiometer 1k D9B diode VHC541 C2021 D9B TRANSISTOR OP209 NPN transistor 2n2222A C2551 | |
marking CODE D2B
Abstract: MARKING CODE D3B EP105 MC10EP105 MC10EP105FA MC10EP105FAR2 D3A transistor D3A marking code
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MC10EP105 MC10EP105 LVEL05 EP105 190ps r14525 MC10EP105/D marking CODE D2B MARKING CODE D3B MC10EP105FA MC10EP105FAR2 D3A transistor D3A marking code | |
EP105
Abstract: MC100EP105 MC10EP105 QFN32 LQFP-32 footprint LQFP32 footprint
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MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 EP105 LQFP-32 MC10EP105/D MC100EP105 MC10EP105 QFN32 LQFP-32 footprint LQFP32 footprint | |
Contextual Info: MC10EP105, MC100EP105 3.3V / 5V ECL Quad 2−Input Differential AND/NAND Description The MC10/100EP105 is a quad 2−input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, |
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MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 EP105 MC10EP105/D | |
MC100E404
Abstract: MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2 ECL IC NAND
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MC10E404, MC100E404 MC10E404/100E404 r14525 MC10E404/D MC100E404 MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2 ECL IC NAND | |
LQFP-32 footprintContextual Info: MC10EP105, MC100EP105 3.3V / 5V ECL Quad 2−Input Differential AND/NAND Description The MC10/100EP105 is a quad 2−input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, |
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MC10EP105, MC100EP105 MC10/100EP105 LVEL05 EP105 MC10EP105/D LQFP-32 footprint | |
ECL IC NANDContextual Info: MC10E104, MC100E104 5V ECL Quint 2-Input AND/NAND Gate The MC10E/100E104 is a quint 2-input AND/NAND gate. The function output F is the OR of all five AND gate outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be |
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MC10E104, MC100E104 MC10E/100E104 MC10E104FN PLCC-28 AND8020 AN1404 AN1405 AN1406 AN1503 ECL IC NAND | |
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ECL IC NAND
Abstract: H 3355 MC10E404 MC10E404FN MC10E404FNR2 MC100E404 MC100E404FN MC100E404FNR2
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MC10E404, MC100E404 MC10E404/100E404 MC10E404/D ECL IC NAND H 3355 MC10E404 MC10E404FN MC10E404FNR2 MC100E404 MC100E404FN MC100E404FNR2 | |
marking CODE D2B
Abstract: MC100E404 MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2
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MC10E404, MC100E404 MC10E404/100E404 r14525 MC10E404/D marking CODE D2B MC100E404 MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2 | |
PART MARKING D0BContextual Info: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND Description The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design |
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MC10E404, MC100E404 MC10E404/100E404 MC10E404/D PART MARKING D0B | |
32 TQFP test socket
Abstract: marking CODE D2B EP105 MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2 MARKING CODE D3B
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MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 r14525 MC10EP105/D 32 TQFP test socket marking CODE D2B MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2 MARKING CODE D3B | |
tqfp 64 thermal resistance
Abstract: marking CODE D2B
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MC10EP105, MC100EP105 MC10/100EP105 LVEL05 EP105 r14525 MC10EP105/D tqfp 64 thermal resistance marking CODE D2B | |
EP105
Abstract: MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2
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MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 EP105 r14525 MC10EP105/D MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2 | |
Contextual Info: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, |
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MC10EP105, MC100EP105 MC10/100EP105 LVEL05 EP105 r14525 MC10EP105/D | |
Contextual Info: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, |
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MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 EP105 r14525 MC10EP105/D | |
EP105
Abstract: MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2 marking CODE D2B
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MC10EP105, MC100EP105 MC10/100EP105 LVEL05 LVEL05 EP105 EP105 r14525 MC10EP105/D MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2 marking CODE D2B | |
MC100E107
Abstract: MC100E107FN MC100E107FNR2 MC10E107 MC10E107FN MC10E107FNR2 marking CODE D2B
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MC10E107, MC100E107 MC10E/100E107 MC10E107FN EIA/JESD78 r14525 MC10E107/D MC100E107 MC100E107FN MC100E107FNR2 MC10E107 MC10E107FN MC10E107FNR2 marking CODE D2B |