D33 TRANSISTOR Search Results

Contextual Info: A Product Line of Diodes Incorporated ZXTD720MC DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • BVCEO > -40V IC = -3A Continuous Collector Current Low Saturation Voltage -220mV @ -1A

DFN3020B-8

Abstract: ZXTD720MC ZXTD720MCTA marking D33
Contextual Info: A Product Line of Diodes Incorporated ZXTD720MC DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • BVCEO > -40V IC = -3A Continuous Collector Current Low Saturation Voltage -220mV @ -1A

DFN3020B-8

Abstract: ZXTD720MC ZXTD720MCTA marking D33
Contextual Info: A Product Line of Diodes Incorporated ZXTD720MC DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • • VCEO = -40V RSAT = 104 mΩ IC = -3A Continuous Collector Current Low Equivalent On Resistance

transistor dk

Abstract: dk transistor
Contextual Info: SKM 111AR MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions P, Q DK R%+ 8 * 55 /.&)3L45) 5;),4=4)0 Values Units ABB DBB @AKBC IBB X DB 9 ZB GGG [ AKB @ADKC S 1 1 S R% DKBB S <¥ Q 9 <6 DBB 1 <¥V Q 9 <6V IBB 1 SM6 <M <MV SW6 P2Y+ @P5.:C S45/* P5 Q DK @UBC R%

3K45

Contextual Info: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions O, P JI Q%+ < * 55 /.&)3K45) 58),4:4)0 Values Units JAA @TA ?@CIB IVA X JA Z VA FFF [ @IA ?@JIB R 1 1 R Q% JIAA R 7¥ P Z 76 @TA 1 7¥U P Z 76U IVA 1 RL6 7L 7LU RW6 O2Y+ ?O5.=B O5 P JI ?TAB Q%

transistor 3005

Abstract: motorola 2963 IC 7585
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Power Transistor MRW53601 . . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1.0 to 3.0 GHz frequency range. • Designed for Class A or AB, Common-Emitter Linear Power Amplifiers

d35 transistor

Abstract: KD224575HB D-35
Contextual Info: mNEREX KD224575HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 High-Beta Dual Darlington Transistor Module 75 Amperes/600 Volts Outline Drawing Dimensions A B inches 3.701 Max. 3.150 ±0.010 Millimeters Dimensions Inches

Contextual Info: m/VEREX KD224575HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Hi(jhm Bet3 Dual Darlington Transistor Module 75 Amperes/600 Volts O U T L I N E DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are

50S20

Abstract: BH6455GUL
Contextual Info: System Lens Driver Series for Mobile Phone Cameras 2 wire serial interface Lens Driver for Voice Coil Motor I2C BUS compatible No.12015EAT04 BH6455GUL ●General Description The BH6455GUL motor driver provide 1 Constant -Current Driver 0.25ch bridge. This lens driver is offered in an ultra-small functional lens

b0724

Abstract: B0719 BD722 transistor bu 311 B0720 BD724 BD440 BD719 BD720 BD726
Contextual Info: BD720 BD722 BD724 BD726 PHILIPS INTERNATIONAL SLE D • 7110fl2ti 0043004 Ô3T M P H I N T - 3 J - 11 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and

ZXMC3AM832EV

Abstract: ZXTD1M832EV ZXTDA1M832EV ZXTDB2M832EV ZXTD2M832EV ZXTD3M832EV ZXTDAM832EV ZXTDBM832EV ZXTDC3M832EV ZXTDCM832EV
Contextual Info: ZXTD*M832EV ZXM*M832EV MPPS Miniature Package Power Solutions COMBINATION DUAL DIE MLP EVALUATION BOARD THERMAL SPECIFICATION SHEET EVALUATION BOARD DIAGRAM DEVICE PIN CONNECTIONS 1 PD = 1.4W 3 4 5 6 Dual Transistor C1 B1 2 E1 B2 E2 C2 Dual MOSFET D1 S1 G1

S9925

Contextual Info: N J u ly 199 6 N D S9925A Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

ci5 5t

Contextual Info: P H IL IP S I N T E R N A T I O N A L st,E ]> Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package

log sheet air conditioning

Abstract: MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC
Contextual Info: ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer

Contextual Info: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents

ZXTD720MC

Contextual Info: OBSOLETE - PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer

c185 transistor

Abstract: 2SK293 3e tRANSISTOR K293A 8115, transistor C14A k293 2SK293A T108 TS33
Contextual Info: NEC j m + T / Y t x $ s i j u > s < r7 — Y 7 .9 S ilico n P o w e r T ra n s is to r A 2SK293,293A FET ¡S liJE iM J S ^ f S a f e X 'r N-channel M O S Field Effect Pow er Transistor High Voltage, High Speed, High Current Switching High Reliavility Industrial Use

160 BA04NSF1

Abstract: 160-DM-PS1 Allen-Bradley 160-dm-sf1 c Allen-Bradley 160-ba02 ALLEN BRADLEY 160 BA04NSF1 160-AA02NSF1 160-BA04 160 ba04nps1 series c AA02NSF1 160-DM-SF1
Contextual Info: Technical Data Bulletin 160 “Series C” Smart Speed Controllers A Step Above the Rest… Bulletin 160 Smart Speed Controller SSC with Sensorless Vector Performance The Bulletin 160 Smart Speed Controller is available in models rated between 0.37 to 4 kW (0.5 to 5 horsepower) with voltage

D128 transistor

Abstract: transistor D128 PT16580-LQ transistor D113 D114 TRANSISTOR transistor D195 TRANSISTOR D114 PT16580 transistor D132 transistor d155
Contextual Info: PT16580 General Purpose LCD Driver IC DESCRIPTION PT16580 is an LCD Driver IC which can drive up to 200 segments. It can be used for frequency display in microprocessor-controlled radio receiver and in other display applications. PT16580 supports both 1/3 duty,

AT41511

Contextual Info: HEWLETT- PAC KARD/ CMPNTS blE T> • 4447584 QOCHaiS 77b H H P A W hp% H EW LETT mL'KM PACKARD Low Cost General Purpose Transistors Technical Data AT-41511 AT-41586 Features D escription • L ow N oise F ig u re 1.4 dB Typical a t 1 GHz 1.7 dB Typical a t 2 GHz

Contextual Info: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor