D25V Search Results

D25VB60

Abstract: D25VB 8002A SHINDENGEN DIODE diode rm D25VB20
Contextual Info: 7 U K SQ.I.PÆ Square In-line Package Bridge Diode OUTLINE DIMENSIONS D25VB 200V 25A • S Q IP A 'v ir - v •S W Œ . Bl HSM m it •S R B S •I?D7 •F A , • Æ tè f? RATINGS Absolute Maximum Ratings m h Item IV i’/ i i i « Storage Temperature Operating Junction Temperature

D25VB60

Abstract: D25VB
Contextual Info: 7 SQ.I.P.S! Square In-line Package Bridge Diode I O U T L I N E DIMENSIONS D25VBD 200V 25A • S Q IP K - j/'t— ÿ •xmmyuyv •BMŒ . SI FSM •S F W S • X 7 = l> •FA , -y • Ê fê ü RATINGS Absolute Maximum Ratings m b Item f5^/i£n fiE Storage Temperature

Contextual Info: fax id: 5213 C Y 7 C 0 2 4 V /0 2 5 V /0 2 6 V CYPRESS PRELIMINARY C Y 7 C 0 2 4 1 V /0 2 5 1 V /0 3 6 V 3.3V 4K/8K/16KX 16/18 Dual-Port Static RAM Featu res • Automatic power-down • Expandable data bus to 32/36 bits or more using Mas­ ter/Slave chip select when using m ore than one device

Contextual Info: u r m LT1513/LT1513-2 TECHNOLOGY SEPIC Constant- or Programmable-Current/ Constant-Voltage Battery Charger F€flTUR€S D C S C R IP TIO n • Charger Input Voltage M a y Be Higher, Equal to or Low er Than Battery Voltage The LT 1513 is a 500kHz current mode switching regula­

STR450

Abstract: BUK444
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

ic 5247

Abstract: vg40t 2 channel 100w audio amplifier circuit diagram T20 02 MG-200 STK400-490 50W TRANSISTOR AUDIO AMPLIFIER
Contextual Info: Ordering number: EN 5247 Thick Film Hybrid 1C No. 5247 S A \Y O STK400-490 3ch A F Power Amplifier Split Power Supply 25W + 50W + 25W, THD = 0.4% I Overview Package Dimensions The STK400-490 is an audio power amplifier IC for multi­ channel speaker applications. It comprises two 25W chan­

d25V

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t Speci f i cat i on P o w e r M O S transistor G E N E R A L DE SCRIPTION N -channel enhancem ent m ode fie ld -e ffe d pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies

HB 100B

Abstract: 1S93 BUK545 BUK545-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711082b OObMSDl Philips Semiconductors bfib H P H I N Product Specification PowerMOS transistor BUK545-100A/B Logic level FET_ _ GEN ER AL DESCRIPTION N-channei enhancement mode logic level field-effeet power

SHINDENGEN TR 222

Abstract: D2S860 D25VB60 F10LC20U S1WBA60B D15VBA d15vba60 D4SBA80 DF25SC6M d3sb60 86
Contextual Info: 1. • -« g a ff* * lo A V V rm (y \ ^ < 4 ^ 0.4 0.8 1 a» S1YB60 S1NB20 S1NB60 S1WBA60 S1WBA60B S1WBA20 S1VB20 S1NB80 1 1.4 S1WBA80Z 1.7 600 800 SHINDENGEN D2SBA20 D2SBA60 LN2SB60 D3B20 D3SBA20 U4SB20 D3SB60 D4SB80 D3SBA60 D4SBA80 D4SB80Z U4SB60 1.1 5

SN30SC4

Abstract: D15VBA60 sivb s4vb bridge rectifier rectifier s1wb smd 1f SIVBA20 SMD 741 4 terminal bridge rectifier S4VB D25VB20
Contextual Info: RECTIFIER DIODES Low frequency rectifying Single Diodes M1F 1F Absolute Maximum Ratings Type No. Color Code VRM M1F60 80 D1F20 60 60A D1N20 60 DINF60 D2F20 60 D3F60 D4F60 S2V20 60 S3V20 60 — — — — — — — — — — — — Red Blue Red Blue Tj

s4vb bridge rectifier

Abstract: D15VBA60 S4VB rectifier 4 terminal bridge rectifier S4VB S5VB S5VB rectifier s4vb 10 38 D5FB20 s4vb 10 15 s4vb
Contextual Info: RECTIFIER DIODES Low-frequency rectifying SQIP Bridge Diodes S15WB S10WB S3WB S20WB Input/Output in-line terminal Absolute Maximum Ratings VRM IO Type No. [V] S3WB20 60 S10WB20 60 S15WB20 60 S20WB20 60 200 600 200 600 200 600 200 600 Electrical Characteristics

cms 12530

Abstract: MA320B MA320 4.7-16 pj 899 diode MA291 MA57 MA320G1-N
Contextual Info: PANASONIC INDL/ELEKiSEMI} 7EC D | t.'iBEflSM □□□ci?3D 3 | * 5 / U D ^ “f7 T — MA 57 MA57 T-b"? IS^ '>|J =] y i fcf^r "j ^ • ^ ■i'JK/'Si Epitaxial Planar -f i — K /B a n d Switching Diode