D2005 Search Results

D2005UK

Contextual Info: TetraFET D2005UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2005UK

Contextual Info: TetraFET D2005UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED C N ty p  A B ! D ( 2 p ls ) F ( 2 p ls ) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil Vrr r = mi TetraFET D2005UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 28V - 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1

Contextual Info: Illl i ^ Illl TetraFET i D2005UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 28V - 1GHz SINGLE ENDED N typ D (2 pis) *v«(2 pis) FEATURES ’ f f t M I E TI - j K • SIMPLIFIED AMPLIFIER DESIGN

lcd12232

Abstract: jtag con3 104p capacitor DB9RA LED sip2 1N4148 D0805 D0805 DB9RA/f LC6 user DK3400
Contextual Info: Bill of Materials for DK3400 Mother Board Comment +6V Pattern DB9RA/F POWER SIP20 Qty 1 1 4 0.33uF 104P 1N4004 220uF 4.7K CON20 805 805 D2005 C320M 805 SIP20 1 2 4 1 2 8 CON3 GND L7806 LCD_GXM12232SL PS2_DIN6_F SW2-SPDT SIP3-POWER SIP20 DPAK LCD12232 DIN6/F

D2005UK

Contextual Info: TetraFET D2005UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2005UK

Contextual Info: TetraFET D2005UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

SBJ200-04J

Contextual Info: SBJ200-04J Ordering number : EN8969 SBJ200-04J Schottky Barrier Diode Twin Type • Cathode Common 40V, 20A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure.

4MN10CH

Abstract: MARKING GL
Contextual Info: 4MN10CH Ordering number : ENA0268 NPN Epitaxial Planar Silicon Transistor 4MN10CH High-Frequency General-Purpose Amplifier Applications Features • • • High fT : fT=400MHz typ . High breakdown voltage : VCEO≥200V. Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=1.4pF.

sim reader

Abstract: sim card chips 292405-1 ASHL-0004-ES
Contextual Info: Qualification Test Report 501-5476 Rev. O1 Product Specification : 108-5826 Reference Test Report No. : TR100395 Date : 26Mar2003 Classification : Unrestricted Prepared by C.OHASHI PE Reviewed by PE Manager Approved by QA Manager NO Tyco Electronics AMP Shanghai Ltd.

Contextual Info: 2SK2618LS Ordering number : EN8614 N-Channel Silicon MOSFET 2SK2618LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C

2SC6016

Contextual Info: 2SC6016 Ordering number : EN8559 2SC6016 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. Large current capacitance.

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

kbc1070

Abstract: fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2
Contextual Info: DDD UMA SI Build Final 2007.03.30 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : DDD UMA SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX1 48 TABLE OF CONTENTS

EMC4000

Abstract: MEC5004 MEC5004 ECE5018 ATMel 118 24c04 isl6260 dell LVDS 30-pin layout C1348-1 dell inverter pinout OZ77C6LN oz2522
Contextual Info: A B C D E COMPAL CONFIDENTIAL MODEL NAME : HAL00 PCB NO : LA-2791 COMPAL P/N : 45135631L01 1 1 Travis UMA Schematics Document 2 2 uFCPGA Mobile Yonah Intel Calistoga + ICH7M 2005-10-06 REV : 0.5 (DELL: X02) 3 3 4 4 DELL CONFIDENTIAL/PROPRIETARY MB PCB Part Number

TA-2054

Abstract: 5C22 NTE 2054 D2005 FTD2005
Contextual Info: Ordering number:ENN6429 N-Channel Silicon MOSFET D2005 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [D2005]

EC4A01TF

Contextual Info: EC4A01TF 注文コード No. N 8 7 1 5 三洋半導体データシート N EC4A01TF N チャネル接合型シリコン電界効果トランジスタ コンデンサマイクロホン用 特長 ・超小型 （1006 サイズ） 薄型 （0.35mm） リードレスパッケージ。

235SU1

Abstract: LA1235M LA1235 3035B D2005
Contextual Info: 注文コード No. N A 0 2 0 3 モノリシックリニア集積回路ファンモータ用 LA1235M FM IF システム用 IC 概要 LA1235Mは高S/N,低ひずみ率FM IFシステム用として開発したものでS/N=88dB,ひずみ率=0.015% を特長とし、FMチューナのIF段に関係したほとんどの機能を内蔵した高集積度ICである。IFアンプ

Contextual Info: D2005 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage

d5023

Abstract: C5027 R d3000 mosfet C5027 r transistor mosfet c5027 equivalent transistor D5023 C6017 Transformer ei33 equivalent of transistor c5027 NEC2501
Contextual Info: Design of an ACIM Vector Control Drive using the 56F8013 Device Designer Reference Manual 56800E 16-bit Digital Signal Controllers DRM075 Rev 1 11/2005 freescale.com Design of an ACIM Vector Control Drive using the 56F8013 Device Designer Reference Manual

equivalent of transistor c5027

Abstract: equivalent transistor D5023 D5023 C5027 d3000 mosfet C5027 r r2003 TRANSISTOR IN4007 diode documentation. free equivalent of transistor c6017 d3002 transistor
Contextual Info: PMSM and BLDC Sensorless Motor Control using the 56F8013 Device Designer Reference Manual 56800E 16-bit Digital Signal Controllers DRM077 Rev 0 11/2005 freescale.com PMSM and BLDC Demonstration using the 56F8013 Device Designer Reference Manual To provide the most up-to-date information, the revision of our documents on the World Wide Web will be

5816B

Abstract: SVC347 TA-1905
Contextual Info: SVC347 注文コード No. N 5 8 1 6 C 三洋半導体データシート 半導体ニューズ No.5816B とさしかえてください。 SVC347 シリコン超階段接合型複合可変容量ダイオード AM 低電圧電子同調用 特長 ・デュアルタイプの AM 電子同調用可変容量ダイオードである。

05S2

Abstract: 05S3
Contextual Info: WDD20 SERIES DC - DC C O N VERTER 15 ~ 20W SIN G LE & D U A L O U T P U T INPUT Pi FILTER SHORT CIRCUIT PROTECTION HIGH PERFORMANCE 2 YEARS WARRANTY MODEL LIST M O D EL NO. IN PU T IN P U T C U RREN T O U T PU T VOLTAGE W ATTAG E typ- EFF. EFF. CAPACITOR

4MP10CH

Abstract: D2005 ITR03479 ITR03481 ITR03483 ITR03485 ITR03487
Contextual Info: 4MP10CH 注文コード No. N 8 4 0 0 A 三洋半導体データシート 半導体ニューズ No.N8400 とさしかえてください。 4MP10CH PNP エピタキシァルプレーナ型シリコントランジスタ 高周波一般増幅用 特長 ・高 fT である：fT typ=400MHz。