D17S Search Results

AEG T 51 N 1200

Abstract: X103 D639S Leistungsdiode aeg tt 46 n 1200 X10378 D44SR D211 AEG tt 45 F 800 D52SR
Contextual Info: A E G CORP 17E D • 002=1421, 000T333 T ■ -7 - - 03~0l Schnelle Leistungsdioden Fast power diodes Diodes de puissance rapides Typ Type If r m s m V rhm t=10n ni A V D 17 S D17SR 0 21 S D21 SR D 30 S D30SR D44S D44SR D 52 S D52SR D 67 S D67SR D 100 S D 100 SR

8051 microcontroller LED dot matrix

Abstract: REL316 bdl 39 jb ds8qc T2D8 microcontroller 8051 application of alarm clock countdown timer using 8051 microcontroller tft interface with 8051 8051 based 20 pin Ic Digital countdown timer DS82CH
Contextual Info: DS80CH10/DS82CH10/DS80CL10/DS82CL10 P R E L IM IN A R Y n . | . A O DS80CH10/DS82CH10 DS80CL10/DS82CL10 Green Energy Manager UALLAO s e m ic o n d u c to r PRODUCT SPECIFICATION V2.2 PRELIMINARY Copyright 1995 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding

82441fx

Contextual Info: PRELIMINARY intel INTEL 440FX PCISET 82441FX PCI AND MEMORY CONTROLLER PMC AND 82442FX DATA BUS ACCELERATOR (DBX) Supports the Pentium Pro Processors at Bus Frequencies Up To 66 Mhz — Supports 32-Bit Addressing — Optimized in-Order and Request Queue

G175

Abstract: 234T0 82439HX CH340
Contextual Info: INTEL 430HX PCISET 82439HX SYSTEM CONTROLLER TXC • ■ ■ ■ ■ Optional Error Checking and Correction (ECC) Supports All 3V Pentium Processors Dual Processor Support PCI 2.1 Compliant Integrated Second-Level Cache Controller — — — — — —

SA1381

Abstract: SS823 RDATA13 3RA61 AC21T n25h VSS1490 bwd9 HAD44 HAD48
Contextual Info: A B C D REVISIONS ZONE LTR CN8237/CX29704 PCB:BT01-D255-011 A DESCRIPTION INITIAL APPROVED DATE RELEASE 1 1 DL1 DELAYLINE 2.5NS 1 2 U7 3 CN8237 SEGMENTATION SCLK0 R124 18 DL2 B3SCLK0 A3SCLK1 R116 18 DELAYLINE 2.5NS POWER VDD PINS E7, E8, E11, E12, E15, E16

MARK RKU

Abstract: fl192 hobbits R6500 R65C00 R65C552 TTL catalog
Contextual Info: m 7Ö11D73 DDITS'iE 4^0 HRK il R65C52 Rockwell R65C52 Dual Asynchronous Communications Interface Adapter (DACIA DESCRIPTION FEATURES The Rockwell CMOS R65C52 Dual Asynchronous Communica­ tions Interface Adapter (DACIA) provides an easily implemented, program controlled two-channel interface between 8 -bit

D86S

Abstract: 68b1 6.2B2 56B2 5.6B2 D158S 54B2 62b1 D33SH 62B2
Contextual Info: A B C D REVISIONS ENGINEERING NOTES 1. Device is dead bug laid out 2. Pin 1 is pointing south 3. A 0.01uf chip capacitor in parallel 4. Use an odd channel, also reserve an 5. Use an odd and even chan. Tie them 6. DUT Analog star GND pin 51, 54 7. Supertex Inc.

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

Contextual Info: irrigl, PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput

weir smm 200

Abstract: 430MX 82437 D2396
Contextual Info: PRELIMINARY in te i INTEL 430MX PCISET 82437MX MOBILE SYSTEM CONTROLLER MTSC AND 82438MX MOBILE DATA PATH (MTDP) • Supports the Pentium Processor at ¡COMP® Index 815\100 MHz, iCOMP Index 735/90 MHz, iCOMP Index 1000/120, and the 75 MHz Pentium Processor

D22-S

Abstract: SBH31-NBPB-D D23-S NBP6
Contextual Info: PART NUMBER CODING SBH31 - NBPB - D - SP - NUMBER OF P O S m O N S CONTACTS PER ROW TERMINATION -SURFACE MOUNT W/ PEGS COLOR BK = BLACK YE = YELLOW RE = RED BL = BLUE GR = GREEN GY = GREY WH = WHITE OR = ORANGE - B -— 4X .059 [1.50]

OA741

Abstract: 430VX D175B OTI-068 82438VX OTI077 Intel 82437 m026 TI07 82437VX
Contextual Info: PRELIMINARY INTEL 430VX PCISET 82437VX SYSTEM CONTROLLER TVX AND 82438VX DATA PATH UNIT (TDX) Supports All 3V Pentium Processors - Back-to-Back Read/Write Cycles at 3-1-1-1-1-1-1-1 - Supports Write-Back PCI 2.1 Compliant Integrated DRAM Controller - 64-Bit Path to Memory

RCA6340

Abstract: 30367 sat 1205 180C 2N6340 2N6341 RCA6341
Contextual Info: 3875081 G E SOLID STA lfÔ Ï High-Voltage Power Transistors DE l 3 a 7 S D f l l D DÏ7E1E fi JT _ 5 _ 5 _ I_ RCA6340, RCA6341 File Number 1205 25-A Silicon N-P-N Power Transistors

Contextual Info: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V VPP ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rate ■ 0.48 MB/sec Sustainable Write Transfer Rate ■ Configurable x8 or x16 Operation

Contextual Info: PRELIMINARY in te i INTEL 430MX PCISET 82371 MX MOBILE PCI I/O IDE XCELERATOR MPIIX • Provides a Bridge Between the PCI Bus and Extended I/O Bus — PCI Bus; 25-33 MHz — Extended I/O Bus; 7.5-8.33 MHz ■ System Power Management (Intel SMM Support) — Programmable System Management

BOX34B

Abstract: BDX34 equivalent 92G9-2274 BDX33 BDX33A BDX33B BDX33C BDX33D 337505 BDX34A
Contextual Info: D l D l F | 3875081 G E SOLID STATE B Û 7 S D Ô 1 0 0 1 7 5 0 1 3 01E 17286 4 | ~ D Y ~ 3 f ~ l7 Darlington Power Transistors_ BDX34, BDX34A, BDX34B, BDX34C, BDX34D File Number

BK 1068

Abstract: SBH31-NBPB-D 540h
Contextual Info: REVISIONS PART NUMBER CODING SBH31 - NBPB - D - SM - NUMBER OF POSITIONS CONTACTS PER ROW TERMINATION -SURFACE MOUNT NO PEGS t_ REV. ECO. NO DESCRIPTION DATE A 1682 INITIAL RELEASE 6/2/2008 VJ B 1852 ADD RS DIM .050[1.27], UPDATE NOTE 3 & TOLERANCE BLOCK

82371SB

Contextual Info: intei PRELIMINARY 82371FB PIIX AND 82371 SB (PIIX3) PCI ISA IDE XCELERATOR — Independently Programmable for Edge/Level Sensitivity Bridge Between the PCI Bus and ISA Bus PCI and ISA Master/Slave Interface — PCI from 25-33 MHz — ISA from 7.5-8.33 MHz

Contextual Info: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time ■ Extended Cycling Capability — 100,000 Block Erase Cycles ■ Automated Byte Write and Block Erase ■ Low Power Consumption

Contextual Info: SAMSUNG ELECTRONICS INC b 7E » • 7 c b m 4 E KM64B258A GG175BQ IT T BiCMOS SRAM 65,536 WORD x 4 Bit With OE) High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)

DU9 308

Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.