D1009UK Search Results

UT85 coax

Abstract: D1009UK UT85-15 25swg FT50B-43 UT85 50 UT85 FT50B
Contextual Info: TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

D1009UK

Abstract: 064R UT85 UT85-15
Contextual Info: TetraFET D1009UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET D1009UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: Illl TetraFET E^E mi D1009UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1S O W -2 8 V -5 0 0 M H z PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS DR PIN 1 SOURCE COMMON

2597 h

Abstract: 064R D1009UK UT85 UT85-15 1j01
Contextual Info: TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

D1009UK

Abstract: UT85 UT85-15 25swg FT50B-43
Contextual Info: TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: nil Vrr r = mi TetraFET D1009UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 5 0 W -2 8 V -5 0 0 M H z PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DR

Contextual Info: bDE D • SEflELAB Ô1331Ô7 DDDDTEL 7 T 4 ■ S f l L B PLC - SEMELAB D1009UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 150W -28 V-500M H z PUSH-PULL MECHANICAL DATA Dim ensions FEATURES • EXTRA LOW PIN1 SOURCE COMMON

D1009UK

Abstract: UT85-15 064R UT85
Contextual Info: TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

D1009UK

Contextual Info: TetraFET M il = ^ E llll D1009UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA G c typ (2 pis) p •t - . - (2 pis) A GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 28V -500MHz PUSH-PULL (4 pis) FEATURES * 1 T . A £ • SIMPLIFIED AMPLIFIER DESIGN

D1009UK

Contextual Info: TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: D1009UK Transistors N-Channel UHF/Microwave MOSFET V BR DSS (V)70 V(BR)GSS (V)20.0 I(D) Max. (A)20 P(D) Max. (W)389 Maximum Operating Temp (øC)200õ I(DSS) Min. (A) I(DSS) Max. (A)4.0m @V(DS) (V) (Test Condition)28.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.3.2

BFM12

Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Contextual Info: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

UT85 50

Abstract: UT85 coax 064R D1009UK D1010UK UT85 UT85-15
Contextual Info: TetraFET D1010UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

D1009UK

Abstract: D1010UK UT85 UT85-15 UT85 coax
Contextual Info: TetraFET D1010UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

GNS430

Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Contextual Info: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon