D056 Search Results

ideall crystal oscillator in microcontroller

Contextual Info: DE | 25Mb324 DDDDSbl 1 • ~D0561 CRYSTAL SEM IC ON DU CT OR DI , i r — bm*b& I'rir tm m m a m sra m D CSZ5116 tm m àm& m mm m r , Semiconductor Corporation 16-Bit 50kHz Sampling A/D Converter Features General Description • . • Monolithic CMOS A/D Converter

Contextual Info: • TqgqSB? D056M57 5 ■ " T '3 3>-Z.°\ f Z T SGS-THOMSON BDX33/33A/33B/33C ^ 7 # MÛi [i[Li©ir[B ô [MQ©S BDX34/34A/34B/34C 3GE D S G S-THOMSON HIGH GAIN GENERAL PURPOSE DESC RIPTIO N The BDX33, BDX33A, BDX33B and BDX33C are silicon epitaxial-base NPN transistors in monolithic

Rod 436

Abstract: push to on switch V3-1001 push to on data switch of push to on switch Honeywell v3-1001 4AC54 122H
Contextual Info: CATALOG m ic r o sw rrcH a Honeywell Division FED. MFG. CODE LIS TIN G 4AC54 ASSEMBLY-SWITCH KC-D0561 91929 MILITARY STDS PART NO. MS 1 6 1 0 6 -2 PUSH TO OPERATE - RETURNS AUTOM ATICALLY TO POSITION SHOWN PULL TO OPERATE - REMAINS IN OPERATED POSITION UNTIL

On semiconductor date Code sot-143

Abstract: 846AB SOT23 A1 TSSOP-8 footprint and soldering sot-23 d056 sot23 8X SOT23-5 318 SOT23 marking L2 sot23 MARKING CODE SOT23-5 HE marking L2 SOT23 6
Contextual Info: PACDN042 Transient Voltage Suppressors and ESD Protectors Product Description The PACDN042/43/44/45/46 family of transient voltage suppressor arrays provide a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge ESD .

18f24k22

Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •

pin diagram of PIC18f45k22

Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •

Contextual Info: TOSHIBA THMY6480D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480D1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.

D018

Abstract: D019 D032
Contextual Info: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.

Intel 1103 DRAM

Abstract: D03B intel 1103 ram D018 D019 D032
Contextual Info: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

D018

Abstract: D019 D032 D051 THMY51E10B70
Contextual Info: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

OQ45

Abstract: D018 D019 D032
Contextual Info: TOSHIBA THMY7216D0CEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216D0CEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404CFT DRAMs and PLL/Registers on a printed circuit board.

ra2b

Contextual Info: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.

ADM241L

Abstract: ADM560 ADM561 EIA-232 MO-150-AH
Contextual Info: Ultralow Power +3.3 V, RS-232 Notebook PC Serial Port Drivers/Receivers ADM560/ADM561 FUNCTIONAL BLOCK DIAGRAM FEATURES +3.3V INPUT CMOS INPUTS CMOS OUTPUTS 12 C1+ 14 C1– 15 C2+ 16 C2– +3.3V TO +6.6V VOLTAGE DOUBLER VCC 11 +6.6V TO –6.6V VOLTAGE INVERTER

Contextual Info: CAT-5 Receiver with Adjustable Line Equalization AD8128 FUNCTIONAL BLOCK DIAGRAM FEATURES AD8128 HPF VIN+ VOUT HPF VIN– LPF VPEAK VGAIN VOFFSET 05699-001 Tuned to compensate for Category-5 CAT-5 cable losses Up to 100 meters @ 120 MHz 2 voltage-controlled frequency response adjustment pins

Contextual Info: Precision Wide Range 3 nA to 3 mA High-Side Current Mirror ADL5315 FEATURES Accurately mirrors input current (1:1 ratio) over 6 decades Linearity 1% from 3 nA to 3 mA Stable mirror input voltage Voltage held 1 V below supply using internal reference or can be set externally

5-phase driver

Abstract: ADP3189
Contextual Info: 8-Bit Programmable 2- to 5-Phase Synchronous Buck Controller ADP3189 FEATURES FUNCTIONAL BLOCK DIAGRAM Selectable 2-, 3-, 4-, or 5-phase operation at up to 1 MHz per phase ±7.7 mV worst-case differential sensing error over temperature Logic-level PWM outputs for interface to external high

Contextual Info: 8-Channel CMOS Logic to High Voltage Level Translator ADG3123 FEATURES FUNCTIONAL BLOCK DIAGRAM 2.3 V to 5.5 V input voltage range Output voltage levels of up to −10 V to +30 V Rise/fall time: 12 ns/19.5 ns typical Propagation delay: 80 ns typical Operating frequency: 100 kHz typical

Contextual Info: High Performance, 12-Bit, 12-Channel Decimating, LCD DecDriver AD8387 FEATURES FUNCTIONAL BLOCK DIAGRAM 12 DBA 0:11 12 DBB(0:11) 12 TWO-STAGE 12 LATCH DAC VID0 TWO-STAGE 12 LATCH DAC VID1 12 TWO-STAGE 12 LATCH DAC VID10 TWO-STAGE 12 LATCH DAC VID11 12 BYP

Contextual Info: PRELIMINARY MICRON I 2 MEG -PCHNOIOGV IJiC. DRAM MODULE X MT8D264 X 64 DRAM MODULE 2 MEG x 64 16 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM)

Contextual Info: ADVANCE |U |IC R O N 4 MEG X MT24D T 472 72 DRAM MODULE 4 MEG X 72 DRAM DRAM MODULE 5.0V FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-perform ance CM O S silicon-gate process

253795

Abstract: D094 intel schematics
Contextual Info: DP Optimized Intel Itanium® 2 Processor Datasheet Intel® Itanium® 2 Processor 1.40 GHz with 1.5 MB L3 Cache Low Voltage Intel® Itanium® 2 Processor Product Features • ■ ■ Optimized for dual processor-based platforms and clusters: — Low Voltage Itanium® 2 processor