D04S Search Results

Contextual Info: HARRIS SEMICOND SECTOR 58E ]> fÜHARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM450 D, R, H • M3GES71 D04S741 737 H H A S 2N7297D, 2N7297R 2N7297H December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 10A, 500V, RDS(on) > 0.600Q

241FA

Contextual Info: üMnnM ^[]=ü January 29, 1998 D04 STUD HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY SET040203 SET040219 SET040212 SET040204 SET040211 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com HIGH CURRENT, HIGH DENSITY, ISOLATED, SILICON POWER RECTIFIER D04STUD

BFG96

Abstract: BFG32 MSB037 3H2 philips MBB352
Contextual Info: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in

Contextual Info: Preliminary specification Philips Semiconductors BFQ292 PNP HDTV video transistor PHILIPS INTERNATIONAL FEATURES SbE D VllGflEh D04SL.7S 3fc.T PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product

4.19MHz crystal

Abstract: KS57C2504 B4MS
Contextual Info: KS57C2504 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C2504 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With up to 320-dot LCD direct-drive capability, 8-bit timer/counter, serial I/O, and comparator, the KS57C2504 offers an

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

siemens ha 8000

Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Contextual Info: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper

Contextual Info: TOSHIBA THMY7280F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The T H M Y 7 2 8 0 F 1 B E G is a 8,3 8 8 ,6 0 8 -w o rd by 7 2 -b it synchronous dynam ic RAM module consisting of

2164 20 pin

Abstract: v 2164 m
Contextual Info: ANALOG ► DEVICES Low Cost Quad Voltage Controlled Amplifier SSM2164 FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trim m ing 120 dB Gain Range 0.07 dB Gain M atching U nity Gain Class A or AB Operation FUNCTIONAL BLOCK DIAGRAM

05S200

Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS64/TMP95C265 CMOS 16-Bit Microcontrollers TMP95CS64F and TMP95C265F 1. Outline and Features TMP95CS64/265 is a high-speed 16-bit microcontroller designed for the control of various mid- to large-scale equipm ent. TMP95CS64 incorporates m asked ROM, while

smd diode marking f4

Abstract: idd04
Contextual Info: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior

OG 72 DN 1024 R

Abstract: R30CI DP-42 HD404302R HD404302RP HD404302RS HD404304 HD4074308 HMCS400 RKM 40
Contextual Info: H D 4 0 4 3 0 4 S eries Description The HD404304 Series is a CMOS 4-bit single-chip microcomputer basically equivalent to the HMCS400 series, providing high programming productivity, high speed operation, and low power dissipation. It incorporates ROM, RAM, I/O, A/D

IR 505H

Abstract: S080C K1429 DCA 305 MB88503H SM07413-0022 TC 90114 KBS8501H MB88500H MB88501H
Contextual Info: s s s ¿T i e ' s d m |S 1 | n p s i i f r« °ls«E{i* ° 2 h* R ? •8 /-«n b» F * n pr » "a* * "?“ T S o , i | ° §tr # 5 arsT k* !t 09 n Sof.isSSS. H- r% is • cl o O k • Mtrt • rfi g ^ s 4*0 O H lip» *I0 ►O • : rs •»e-w-§ # J« I^ 5(t

E182481

Contextual Info: 2.54mm 0.100" Female Header E182481 Features: ' ¿ ^ P D F * 8 * Available in 02 through 43 Circuits JSSU ED /^ * Material: P.B.T UL 9 4 V -0 * Pin Material: Brass/Iln-Plated D .C Specifications: 2.50 o CO 3,20 Ordering information: * Pitch Between Poles 2.54mm

D04S60

Abstract: d04s6
Contextual Info: SDP04S60, D04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode Product Summary V VRRM 600
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark Qc 13 nC
No reverse recovery

Contextual Info: SDP04S60 D04S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF

philips bfq32

Abstract: BFQ32
Contextual Info: Product specification Philips Semiconductors 7 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 5bE » ^ 3 / - 2 . 3 BFQ32 711üfl5b G045420 41D H P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband

Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description

SB0061

Abstract: AP239 sick wl 33-01 F11YT1 DIODE E BUG C552 intel dg41 diode BUG C332 04D2R 1R32Z intel dg41 vw
Contextual Info: Twinhead Model : F11YT1 R:0 Intel Yonah ULV+Calistoga 945GM+ICH7-M Revision History A ORIGINAL RELEASE B 2006/01/12 Rev :B release. C 2006/03/17 Rev:C release. 2006/03/31 Rev :0 release. PCB STACK UP LAY1 LAY2 LAY3 LAY4 LAY5 LAY6 LAY7 LAY8 TOP GND IN1 VCC

A1 D036

Contextual Info: TO SH IB A THMY721661EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

transistor bfr96

Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor
Contextual Info: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as

du27

Abstract: AL3124 d04s DU32 1-23AL
Contextual Info: DENSE-PAC 1152 Megabit CMOS DRAM MI C R O S Y Ë T EM S DPD16MS72RW5 ADVANCED INFORMATION PIN-OUT DIAGRAM DESCRIPTION: The DPD16MS72RW5 is the 16 Meg x 72 Dynamic RAM module in the family of Super DIMM modules that utilize the new and innovative space saving TSOP

Lmb204

Abstract: 441L204
Contextual Info: Hitachi Single-Chip RISC Microcomputer SH7020, SH7021 HD6437020, HD6437021 Hardware Manual HITACHI 4 4TbE04 0 0 4 4 7 ^ 3 TEÔ ADE-602-074 fl Notice W hen using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.

S9157

Contextual Info: TOSH IBA THMY7232G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.