D0272 Search Results

CNY17 Harris

Abstract: CNY17 III
Contextual Info: 3875081 G E S O L ID STATE 01E 19822 Optoelectronic Specifications _ T HARRIS SEMICOND SECTOR 37E D I - m - S 4305271 D0272Û4 4 * H A S Photon Coupled Isolator CN Y17 Ga As Infrared Emitting Diode & npn Silicon Photo - Transistor T h e G E Solid S tate CN Y17 consists o f a gallium arsenide infrared

AmPAL16R8

Abstract: 16H8 AmPAL16R4 16R4Q 16R8 8103613RX 16L8 16R4 16R6 electrical bra
Contextual Info: ADV MICRO PLA/PLE/ARRAY sT Î dË | . 0257SSL, D0272M2 T-46-13-47 ' AmPAL16R8 Fam ily 20-Pin IMOX"* Programmable Array Logic PAL Elements Distinctive Characteristics ! i r • AMD's superior IMOX technology - Guarantees tp o “ 1S ns Max. " B " Versions

Contextual Info: 38 75 081 G E S O L I D ST A T E 0 1E 1 9 8 14 Optoelectronic Specifications_ HARRIS SEfllCOND SECTOR Light Detector 37E D • 430E271 D02727b S^IBHAS Planar Silicon Photo-Darlington Amplifier BPW38 T h e G E S o lid S ta te B PW 38 is a supersensitive N P N P la n a r S ilicon

Contextual Info: H A RR IS S E M I C O N D S E CT OR 37E D * 4 30 2 27 1 D0272D4 I HAS 2 Optoelectronic Specifications_ Photon Coupled Isolator H11K1, H11K2 G a As Infrared E m itting D iode & T w o N P N S ilicon P h o to -D a rlin g to n Amplifiers The OE Solid State H 11K series consists of a gallium arsenide, infrared emitting

Contextual Info: 3875081 G E SOLID 0 1 E 19746 STATE D Optoelectronic S pecifications_ HARRIS SEtllCOND SECTOR 37E D I 4 30 2 2 7 1 D0272GÔ T • HAS Photon Coupled Isolator H11L1,H11L2, H11L3 Ga As Infrared E m ittin g D iode & M icroprocessor C om patible S c h m itt Trigger

Contextual Info: sì GEC PLESSEY OCTOBER 1996 S E M I C O N D U C T O R S D S 4287 - 2.3 ACE9020 RECEIVER AND TRANSMITTER INTERFACE Supersedes DS4287 - 1.0 in Communications 1C Handbook. HB4235 - 1.0, February 1996 ACE9020 is a VHFoscillator, up-converter and prescaler.

HM514170CLJ8

Abstract: HM514170CLJ-8 HM514170CJ7
Contextual Info: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM 51 S 4170C are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 p.m CMOS process

Contextual Info: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers

LF 3.3vOLT

Contextual Info: PRELIMINARY IDT72V255 IDT72V265 3.3 VOLT CMOS SUPERSYN C FIFO 8,192x18,16,384x18 Integrated Device Technology, Inc. • Output enable puts data outputs into high impedance • High-performance submicron CMOS technology • Industrial temperature range -40°C to +85°C is avail­

Contextual Info: Bulletin 125175/B International S Rectifier ST223S SERIES Stud Version INVERTER GRADE THYRISTORS Features • All diffused design ■ Center amplifying gate ■ Guaranteed high dv/dt ■ Guaranteed high di/dt ■ High surge current capability ■ Low thermal impedance

RBS 2202

Abstract: BBS 2202 intel 80188 Lucent SLC 96 CI 4048 counter ami c21 SESCO MOTOROLA LSC SR12 SR14
Contextual Info: Preliminary Data Sheet June 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7230A Primary Access Framer/Controller Features • Framing formats — DS1 extended superframe ESF — DS1 superframe (SF): D4; SLC^-96; T1DM DDS; T 1DM DDS with FDL access

SAP 16 PY

Abstract: chroma 175 ic 12k5 B541A NTSC CHROMA SIGNAL PROCESSOR Processing M51405AFP Capacitor 47 JFK DDS7570 color killer circuits block diagram Video Chroma Signal Processor
Contextual Info: MITSUBISHI ICs TV M51405AFP/VP NTSC VIDEO CHROMA SIGNAL PROCESSOR DESCRIPTION The M51405A are a semiconductor integrated circuit for processing video signals in an NTSC system color LCD TV. It contains ACC, color signal demodulator, picture quality control, APC, VCXO, RGB matrix amplifier, tint

AD8512

Abstract: ad8512arz AD8510ARM AD8513 AD8510
Contextual Info: Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers AD8510/AD8512/AD8513 –IN 2 AD8510 8 NC NULL 1 7 V+ –IN 2 TOP VIEW 6 OUT Not to Scale V– 4 5 NULL NC V+ TOP VIEW 6 OUT (Not to Scale) V– 4 5 NULL +IN 3 7

Contextual Info: 1 MHz to 2.7 GHz RF Gain Block AD8353 Data Sheet FUNCTIONAL BLOCK DIAGRAM Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 9 dBm Input/output internally matched to 50 Ω Temperature and power supply stable Noise figure: 5.3 dB

Contextual Info: B U R R -B R O W N « E IS0103 1 Low-Cost, Internally Powered ISOLATION AMPLIFIER FEATURES APPLICATIONS • SIGNAL AND POWER IN ONE DOUBLE-WIDE 0.6" SIDE-BRAZED PACKAGE • 5600Vpk TEST VOLTAGE • MULTICHANNEL ISOLATED DATA ACQUISITION • ISOLATED 4-20mA LOOP RECEIVER AND

V956ME03

Contextual Info: PLL Frequency Synthesizer ADF4106 Data Sheet FEATURES GENERAL DESCRIPTION 6.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65

Contextual Info: G F T PI FS^FY 5Ü X J SEPTEMBER 1996 t PRELIMINARY INFORMATION S E M I C O N D U C T O R S D.S. 44101.5 SL6679 DIRECT CONVERSION FSK DATA RECEIVER The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450MHz. The device integrates

Lucent dw025acl-m

Abstract: DW025ABK-M DW025
Contextual Info: Data Sheet June 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations DW025 Triple Output-Series Power Modules: 36 Vdc to 75 Vdc Input; 25 W Options • Short pins: 2.79 mm ± 0.25 mm 0.110 in.±0.010 in. ■ Negative logic remote on/off

Contextual Info: i i N AMER PHILIPS/DISCRETE b'lE D • bbS3^31 Q05723D 851 H A P X BT138F SERIES J V FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking

AmPAL23S8-30

Contextual Info: A DV MICRO PLA/PLE/ARRAYS , Tt. D e | 02S7S2t, 0 0 2 7 2 2 7 1 T -V 4 -/3 -V 7 AmPAL23S8 20-Pin IMOX PAL Device-Based Sequencer Distinctive C haracteristics • • • • • 14 Registers - 4 Output Logic Macrocells OLMs - 4 Output Registers - 6 Buried State Registers (BSRs)

TXXXXXXXXXX

Contextual Info: CMOS SUPERSYNC FIFO 16,384 x 9, 32,768 x 9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • The IDT72261/72271 are monolithic, CMOS, high capac­ ity, high speed, low power first-in, first-out FIFO memories

triac bt139

Abstract: 800H BT139 T0220AB RJ28
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbSSTSl 0D272fc>5 070 ■ APX Preliminaryspec Triac BT139 series H GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 16 A triacs intended for use in applications

memory cats

Abstract: HM5118160B HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ-8 HM5118160BLJ-6 HM5118160BLJ-7 HM5118160BLJ-8
Contextual Info: HM5118160B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-476 Z Preliminary Rev. 0.0 Dec. 6, 1995 Description The Hitachi HM5118160B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160B offers Fast Page

Contextual Info: MITSUBISHI M EM OR Y CARD F LA S H M E M O R Y CAR DS M F 8 4 M 1 -G 4 E A T X X 8/76-bit Data Bus Flash M e m o ry C ard Connector Type Two-piece 68-pin 7 D E S C R IP TIO N The M F 84M 1 - G4E A T X X is a flash m em o ry card • T T L interface level ■ P ro g ra m /e ra se operation by softw are com m and