D001 Search Results

Contextual Info: MTEL INC 47E D • HbSlSbl D001735 27^ *]>TL roMUEo: DIP Series Miniature 1 Watt DC-DC Converters -T'01-ll FEATURES • • • • • Compact 24-Pin DIP Package Low noise, regulated outputs Pi Input Filter 300V dc isolation Short Circuit Protection GENERAL DESCRIPTION

telephone hybrid 2wire to 4wire

Abstract: RJ11C PSTN DAA hybrid CH1816 2wire 4wire telephone 4-wire to 2-wire hybrid DS6112 DAA 244 XE0002 1E20
Contextual Info: CER M ET EK M I C R O E L E C T R O N I C S 3ÖE D • 2005Ö03 D00152Q 5 BICER CH1816 Data Access Arrangement DAA Direct Connect Telephone Line Interface _ INTRODUCTION The Cermetek CH1816 DAA module provides complete DAA (Data Access Arrangement) for direct connection to telephone lines. This

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D • b35337T D001B3fl 525 « M O C 256K x 8 CMOS SRAM molaic M S M 8 2 5 6 -4 5 /5 5 /7 0 Issue 2.1 :August 1992 M osaic PRELIMINARY Sem iconductor Inc. r 262,144 x 8 CMOS High Speed Static RAM A Pin Definition Package Type ‘S \V

Contextual Info: ITEM <5 PART NUMBER BODY ITEM <£> CONTACT 142 -4 40 7 -1 01 BRASS GOLD PL .00001 MIN OVER NICKEL PL .0 0 0 0 5 MIN OVER COPPER PL .0 0 0 0 5 MIN BRASS NICKEL PL .D001 MIN OVER COPPER PL .0 0 0 0 5 MIN I4 2 -4 -4 0 7 -I0 6 ITEM <3> INSULATOR ITEM <g> HEX NUT

K1834

Abstract: 185-C
Contextual Info: 74 7294621 POWEREX INC ! -Oi~ 13 DE I 7ET4bSl D0014D5 S | ~ Silicon A540 RECTIFIER 2400 Volts 1000 Amps Avg. The A 540 Series o f high power rectifier diodes feature the newly developed, multi-diffusion technology in a new General Electric pressure-mounted

Contextual Info: SANKEN ELECTRIC CO LTD 5SE J> • SLA4030 7 ^ 0 7 4 1 D001204 04b « S A K J Silicon NPN Triple Diffused Planar Darlington IMaximum Ratings Hem Ta = 25°C IÍWSÍ Symbol Collector-to-B ase Voltage V CBO 120 V Collector-to-E m itter Voltage VC E O 100 V Em itter-to-Base Voltage

VK248

Abstract: VK1048 VK448 VK048 VK447 VK148 VK848 VK247 VK647 Epoxy Bridge Rectifiers
Contextual Info: M ICRO SEM I CORP/ MICRO SbE 5 • b l l S 'ìG ? M IC R 0 Q U A L IT Y / SEMICONDUCTOR. INC 30 Amp Epoxy Bridge Rectifiers D001311 « ìlb ■ ^ ^ 3- MÛL 7 VK Series 30 Amps DC Forward Current at Tc = 80°C 300 Amps Peak One Half Cycle Surge Current Externally Exposed Copper Mounting Pad

1N914 ITT

Abstract: s0103a 1k4148 S0103 SB101B 1N4154 1N444 1N914 K150 1N444A
Contextual Info: I T T CORP/ I T T CMPNTS 41E T> Bi 4b ô 2b û 4 D0014D4 Ö H IT O T* o 3 - o q SILICON DIODES General P urpose and S w itc h in g D iode s in DO-35 Package & DO-34 Package Tjs* Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­

transistor WT5

Abstract: wT5 diode Westinghouse diode WT5 transistor westinghouse capacitor westinghouse westinghouse transistors WT5603 WT5606 WESTINGHOUSE transistor
Contextual Info: 9 7 0 9 9 5 5 W ESTCnPF UJESTCODE V B M 3 4C S F M I f .O N D lJ C T Q R S SEMICONDUCTORS 34 D001743 B a M H B n M B H a B B a B B B n a M H B H n WT5603/06 Issue 1 w a n v k February 1981 100kW Switched Power 200 Am peres Continuous 500 Volts Sustaining Voltage

VTE-C15AL

Contextual Info: SbE D 3G30bDT D001214 GaAIAs Infrared Emitting Diodes 42=1 B i V C T V T E -C 1 5 A L 15 mil Chip — 880 nm E G & G VACTEC D E SC R IP T IO N P A C K A G E D IM E N S IO N S inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase

photodiode ge

Abstract: VTB8443 VTB8444 photodiode 516
Contextual Info: SbE » m aDBGtOT D0010S2 470 VTB Process Photodiodes VCT V T B 8 4 4 3 , 8444 E G & G VACTE C T-41-51 PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. Chip is

686LCD

Abstract: lq10dh011 p612
Contextual Info: INTERFACE SPECIFICATION INSIDE Technology Document no. D00112-0 Display type: Cable no.: System: Display driver: Status: Sharp LQ10DH011 for 686LCD/S Date: 1997-04-28 Sharp LQ10DH011 Not available 686LCD with + FPUM-1 640x480 TFT18 Not verified Display 22-pole conn.

ta022

Abstract: CR 0090 RD006 Zhongshan
Contextual Info: 1500±50 0 6 . 7±0.1 TST 0 6 . 7±0.1 Home Cinema • High Resolution • Audio-Video Interconnect CabletsInterconnect Cable-* /, Black / Cable Print: T S T ™ Home Cinema • High Resolution • Blue Symbol: Audio-Video Interconnect Cable r Colour ring red/black, 1PC each),No:G/D001.

radiation tolerant ethernet phy

Abstract: MAC layer sequence number
Contextual Info: Network-99-D001 Feb 1999 DATASHEET for KS8910 100/10 Mbit/s Ethernet Transceiver Short Form Preliminary Specification Version 1.3 1 SYSTEM LSI NETWORK GROUP KS8910 100/10 Mbit/s ETHERNET TRANSCEIVER Data Sheet OVERVIEW The KS8910 10Base-T/100Base-TX Ethernet transceiver is fully compliant with the IEEE 802.3u specification,

LT3973-3.3

Abstract: LT3971-3.3
Contextual Info: broadband, low distortion Frequency Mixers Model flQbflfill D001BS1 371 M S C C D /I o , LEVEL 13 +13dBm LO, up to +9dBm RF x I i-\ /I-I T ~~7 4 ~ 0 9 - 0 TFM-12MH i SCIENTIFIC/ MINI-CIRCUITS computer-automated performance data typical production unit / for data of other models consult factory

Contextual Info: 40E D B 3455738 D001DLS 7 B SE N I FASCO INDS/ SENISYS CLM8500 CLM8500/2 T_ _ LED- CLM 8500 Photoconductor Isolators This new PHOTOMOD5 Series combines solid state lamps with Clairex* photoconductive cells in small, rugged axial-lead isolators. The CLM 8500 combines a CdS hermetically sealed

Contextual Info: blE D EUPEC • 34032^7 D0010S0 TM2 « U P E C TT 31 N, TD 31 N, DT 31 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: C E RM E T E K M I C R O E L E C T R O N I C S 3ÔE D • 20DSÔ03 D001105 S * C E R ~ T -7 S -3 CH1775 Modem Module INTRODUCTION FEATURES The Cermetek CH1775 Modem Module offers the design engi­ neer a quick and easy way of integrating a high performance

VTM7125

Contextual Info: 5 bE J> 3 D3DbGT D001531 SDÛ GaAs LED/Silicon Photodarlington Matched Pairs - Lateral Package IVCT VTM7125 E 6 & G VACTEC P A C K A G E D IM EN SIO N S inch mm .0 5 5 {1 .4 0 ) .7 0 (1 7 8 ) .0 4 5 ( 1 .1 4 ) MINIMUM .0 2 8 ( 0 . 7 1 ) MAX Ì - £

Contextual Info: il DE 1 7ET4tiSl D00174S D | ~ 7294621 POWEREX INC 91D 01745 D T-Ö/W? Standard Rectifiers I f av Te =100° C 50% Duty Cycle, Half Sine 60 Hz (Amps) l*t I fsm (Amps) 50 Hz 60 Hz for Fusing 8.3 ms (A2sec) @ .8 45 50 10 3 180 200 165 6 360 400 12 228 12 Vfm

IC 7476

Abstract: 14120 81 210 W 20 81 210 w 54 EUPEC TD 25 th34032 dt250n DT18N td18n
Contextual Info: b l E T> EUPEC 3 4 0 32 *1 7 I D0013Q1 0Tb M U P E C Thyristor-Dioden-Module für l-Umrichter Thyristor-diode-modules for current source inverters Typ Type V drm V rrm It r m s m I tsm / ¡ 2dt I t avm ^ c V TO rj (dv/dt)cr R th jc DIN ty p . IEC 747-6 □ IN

INI615

Abstract: 1Nu5 1N1614 Diodes IC 4011 4011 IC 1N4A NASA Group MC 4011 B 1N1614 1N1614R
Contextual Info: MIL SPECS I C | 0 D D G 1 E S D0011S1 T | 7^0/-¡7 NOTICE OF VALIDATION INCH-POUND MIL-S-19500/162B NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R

DS1410E-GSI

Abstract: DS1410E-001 DS1410E DS1410D ds1410e-001#
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: April 11, 2000 Subject: PRODUCT CHANGE NOTICE – D001401 Description: DS1410 Printed Circuit Board ReDesign

Contextual Info: BENCHMARÛ MICROELEC BENCHMARQ bôE D Preliminary • 137 ô fln D001433 70S M B E N bq3287E/bq3287EA Real-Time Clock RTC Module Features >• System wake-up capability— alarm interrupt active in battery-backup mode >- 242 bytes of general nonvolatile