1N4459R Search Results

INI615

Abstract: 1Nu5 1N1614 Diodes IC 4011 4011 IC 1N4A NASA Group MC 4011 B 1N1614 1N1614R
Contextual Info: MIL SPECS I C | 0 D D G 1 E S D0011S1 T | 7^0/-¡7 NOTICE OF VALIDATION INCH-POUND MIL-S-19500/162B NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R

Contextual Info: 1N4459R+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)150Ï V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

1N1614 Diodes

Abstract: 1N1614 1N1616 1N4458 1N1615R 1N1614R 1N1615 1N1616R 1N4458R 1N4459
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/162 • Glass Passivated Die • VRRM 200 to 1000 Volts

MIL-PRF-195001

Abstract: 1N1614 Diodes 1N1614 1N1614R 1N1615 1N1615R 1N1616 1N1616R 1N4458 1N4458R
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 2 January 2008. MIL-PRF-19500/162D 2 October 2007 SUPERSEDING MIL-PRF-19500/162C 21 August 1997 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, POWER RECTIFIER,

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

1N1614

Abstract: 1N1614R 1N1615 1N1615R 1N1616 1N1616R 1N4458 1N4458R 1N4459
Contextual Info: Military Silicon Power Rectifier 1N1614-1N1616, 1N 4 4 5 8 —1N4459 Dim Inches M illim e te r M inim um M axim um M inim um M aximum N otes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ithin 2 1 /2 th re a d s 3. S ta n d a rd P olarity: Stud is

1N1614

Abstract: 1N1614R 1N1615 1N1615R 1N1616 1N1616R 1N4458 1N4458R 1N4459
Contextual Info: lita ry Silicon Power Rectifier N1614-1N1616. 1N4458—1N4459 D im In c h e s M in im u m N o te s : 1. 1 0 -3 2 2. Full t h r e a d s w ith in 2 1 / 2 th re a d s S t a n d a r d P o la rity : S tu d is C a th o d e R e v e rs e P o la rity : S tu d is Anode