D.331 TRANSISTOR Search Results

philips bfq

Abstract: BFQ263 BFQ263A RK 100
Contextual Info: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with

lt 332 diode

Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
Contextual Info: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350

sdt9303

Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
Contextual Info: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @

C 331 Transistor

Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
Contextual Info: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.

2N3773 equivalent

Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
Contextual Info: pia E>iy <mr /a u m ® C o n tr a n Devices. Inc MEDIUM VOLTAGE CHIP NUMBER NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 31) CONTACT METALLIZATION Base. Emitter and Collector Solder Coated 95/5% lead/tin. ASSEM BLY RECOMMENDATIONS It is advisable that:

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 1, 11/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

AFT21S230S

Abstract: aft21s232s C5750X7S2A106M
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 2, 3/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

transistor h 331

Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

transistor d-331

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

8060 transistor

Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

phototransistor 650 nm

Abstract: phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

6852 d TRANSISTOR

Abstract: lt 6224 7805m te 330 61m L6064 SS769 m 9583 transistor 54676 SD1338
Contextual Info: H f i r i. ! Ê W tË C n JS G n rÊ Ê « Comm erce Drive Montgomaryvills, PA T ôi ; 21S 631_9840 18936-1013 S D 1332 RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL * HIGH F T - 5 . 5 GHz * V L R Y LO W NOISfc: « ALL GOLD METALLiZED * HfcHMfc I IC PACKAUc

Contextual Info: Mbö2?ll 00DÖ535 0^7 H DDP3310B ADVANCE INFORMATION Contents Page Section Title 4 4 5 5 1. 1.1. 1.2. 1.3. Introduction Main Features System Architecture System Application 6 6 6 6 6 7 8 8 9 9 9 10 10 12 12 12 13 13 15 16 16 16 17 18 18 18 19 19 19 20 20 20

Contextual Info: B 32 9 -9 7 IF1331 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings at TA = 2 5'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

Contextual Info: warn P H O 'TO T R A N S IS T O R ?*, ¡-x PHI 04 PHOTO TRANSISTOR - N E P O C SERIES — The PH 104 is a photo transistor in a plastic molded package, and PACKAGE DIMENSIONS very suitable for a detector of a photo interrupter. in millimeters inches 5.0

2N5005 TO-59

Abstract: 2N5005
Contextual Info: Data Sheet No. 2N5005 Generic Part Number: 2N5005 Type 2N5005 Geometry 9702 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/512 Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case.

bd955

Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F
Contextual Info: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.

zo 103 ma

Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
Contextual Info: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband­

Tfk 880

Abstract: TFK 804 TFK 802 S45C tfk bfx89 BFX89 tfk 332 ir tfk case BFX89
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den GHz-Bereich Applications: General, up to the GHz ränge Besondere Merkmale: Features: • Leistungsverstärkung 7 dB • Power gain 7 dB

Contextual Info: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and line drivers.

Contextual Info: SAM SUN G SE MI C O N D U C T OR INC MJE172 D | 7^145 ÛÛQîtTB *f | PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cofector-Base Voltage | CoBector-Emitter Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC 1 14E D I 7 % ^ ^ 0007710 I : t - MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AN6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High C urrent Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (T«=25°C)

2SB133

Contextual Info: ROHM CO MOE LTD TASÓTE D ODGSbST I RHM S 2SB1335 h V > y X $ //Transistors 7=33-^ 9 2SB133; X fcf £ *r V 7 ¡ V f b - i~ M PNP y V □ > h ÿ > y X $ MJMÌ&WJjiMtymffì/Low Freq. Power Amp, Epitaxial Planar PNP Silicon Transistor 1 VcE sat) VcE(sat)=-0.5V (Typ.) Ic /I b = —