D-111 TRANSISTOR Search Results

TMCM-111-56

Abstract: PD-111-56 TMCM-111-56 manual "Stepper Motors" for ATmega32 stepper motor interfacing circuits of atmega32 NEMA-23 microcontroller atmega32 stepper motor coil termination TMC428 TMCM-110-42
Contextual Info: PANdrive PD-111-56 and TMCM-111-56 56mm / NEMA-23 Stepper Motor Mechatronic Module TMCM-110-42 Electronics Manual Version: 1.22 October 30th, 2007 Trinamic Motion Control GmbH & Co. KG Sternstraße 67 D - 20357 Hamburg, Germany http://www.trinamic.com TMCM-111-56 Manual

245A-02

Contextual Info: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per

2N3820

Contextual Info: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS

Contextual Info: HTE VA RI -L CO INC D • TM37b2M QQQlGSb 4 ■ VR L T-50-15 VCO-111 Voltage Controlled Oscillator 1500-2750 MHz DESCRIPTION The VCO-111 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar

Contextual Info: LINEAR TECHNOLOGY CORP 43E D • SSlSMbfl 0D051A2 7 « L T C RH1011 ■— T -7 3 -5 3 Voltage C om parator DESCRIPTION ABSOLUTE M A X IM U M RATINGS The RH1011 is a general purpose comparator with significantly better input characteristics than the LM 111. Although pin compatible with the LM 111, it

2N3392 equivalent

Abstract: 2N3394 2N3394 equivalent 2N3391 2n3393 equivalent 92C3-426C3 2N3391A 2N3393 2N3392 3391A
Contextual Info: G E SOLID STATE 3875081 G E SOLID STATE 0 1 D E Ï 3Û7S0Û1 0017=111 01E 17911 D r- W ' t l Transistors 2N3390-94,2N3391A Silicon Transistors TO-98 The 6E/RCA 2N3390-94, 2N3391A are planar, passivated

transistor 800V 1A

Contextual Info: bOE D fll331fl? 000051b 111 • S N L B SEMELAB PLC SEMELAB 'T J 'S - v l? BUL54B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensionsin mm Designed for use in electronic ballast lighting applications

sil1364

Abstract: PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa
Contextual Info: 5 4 3 2 1 D D Inventec Corporation R&D Division C C Board name : Mother Board Schematic Project : M11D Santa Rosa Version : 0.1 Initial Date : March 22 , 2007 B B A A Inventec Corporation <OrgAddr4> Inventec Buliding,66 Hou-Kang Stree Shin-Lin District, Taipei 111, Taiwan

16 amp npn darlington power transistors

Abstract: MOTOROLA TIP115 transistor BTA 006
Contextual Info: MOTOROLA Order this document by TIP110/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic M edium -Pow er Com plem entary Silicon Transistors T IP 1 1 0 . . . designed for general-purpose amplifier and low -speed switching applications. • • • • • T IP 111*

Contextual Info: N AUER PHILIPS/DISCRETE ObE D • bb53T31 0 0 1 5 111 7 ■ PTB42001X PTB42002X J L T - 5 3 -/2 ? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz,

TIP NPN

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
Contextual Info: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51

Contextual Info: APX b7E D • 1^53=131 OOSSMbM 111 N AMER PHILIPS/DISCRETE BSP40 to 43 ; v SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.

Contextual Info: TOSHIBA R N 11 10F#R N 111 1F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1110F, RN1111F Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design

T1P112

Abstract: T1P111
Contextual Info: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51

TLP115A

Abstract: E67349
Contextual Info: TOSHIBA TLP115A TOSHIBA PHOTOCOUPLER G aA M s IRED & PHOTO-IC T LP1 1 5A HIGH SPEED, LONG DISTANCE ISOLATED LINE RECEIVER U n it in mm MICROPROCESSOR SYSTEM INTERFACES 6 DIGITAL ISOLATION FOR A/D, D /A CONVERSION 5 4 111 COMPUTER-PERIPHERAL INTERFACES GROUND LOOP ELIMINATION

TLP115

Abstract: E67349
Contextual Info: TOSHIBA TLP115 TOSHIBA PHOTOCOUPLER G aA M s IRED & PHOTO-IC TLP1 1 5 HIGH SPEED, LONG DISTANCE ISOLATED LINE RECEIVER U n it in mm MICROPROCESSOR SYSTEM INTERFACES 6 DIGITAL ISOLATION FOR A/D, D /A CONVERSION 5 4 111 COMPUTER-PERIPHERAL INTERFACES 't GROUND LOOP ELIMINATION

MCD206

Abstract: BLV13 PHHI philips Trimmer 60 pf sot123 ceramic capacitor 47 pf MC-02C
Contextual Info: 0020125 Philips Sem iconductors 75 B APX Product specification VHF power transistor ^ A U E P H ILIP S /D IS C R E TE b^E • Gold metallization ensures excellent reliability. MODE OF OPERATION c.w. class-B f MHz 175 111 O > Emitter-ballasting resistors for an

2N4115

Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
Contextual Info: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca|l T O LL FR EE 800-526-4581 PNP

AD149

Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3

irf113

Abstract: IRFF110 IRFF RFF-11
Contextual Info: SILI CON I X 1ÖE D INC ilicoont. C T ’S S ilic ix_ X M • 025*4735 001470 ^ 3 ■ IRFF110/111/112/113 in c o rp o r a t e d inci N-Channel Enhancement Mode Transistors T -^ o i -0 7 TO-205AF BOTTOM VIEW PRODUCT SUMMARY to PART NUMBER V BR|DSS IRFF11Q

54h00

Abstract: 54H32
Contextual Info: LANSDALE SEMICONDUCTOR 17E D • 53^003 3 GQ0D302 b T - 5 H 1 Ill 111 1£ MOTOROLA INTEGRATED CIRCUITS 3OOO/74HO0 Series 3100/54H00 Series TTL III integrated circuits com­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a

Contextual Info: Transistors with built-in Resistor UNRL110/111/113/114/115 Silicon PNP epitaxial planer type Unit: mm For digital circuit 0.020±0.010 2 0.80±0.05 3 M Di ain sc te on na tin nc ue e/ d • Features • UNRL110 • UNRL111 • UNRL113 • UNRL114 • UNRL115

sgs110

Abstract: SGS116
Contextual Info: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration

p504a

Abstract: LB-10 GA NANA TLP504A TA525 E67349 TLP504
Contextual Info: TRANSISTOR COUPLER GZ3 TLP504A INFRARED LE D +P H O TO TRANSISTOR TLP504A HAS TUO CHANNELS FOP. HIGH DENSITY APPLICATIONS. 8 7 a s m m m r ti THIS Ufi IT IS A 8-LEAO OtP PACKAGE. =a . OATA LINE ISOLATION . TELEPHONE SIGNAL COUPLING IP 111 Ili lili . LIME/CABLE RECEIVER