D W MARKING DIODE Search Results

marking yw

Abstract: 9632 transistor 9632 transistor marking 6c 95060
Contextual Info: Part Marking Information Vishay High Power Products FlipKY 0.5 A/0.75 A Part number Lot number Ball 1 location mark Y L YW Workweek Year PART NUMBER MARKING FCSP0530TR D FCSP0530ETR C FCSP05H40TR F FCSP05H40ETR E FCSP0730TR Y FCSP07H40TR W TABLE 1 W = 1 TO 26 IF PRECEDED

Contextual Info: SIEM ENS S ilic o n S w itc h in g D io d e A rray B A W 100 ♦ • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAW 100 JSs Q62702-A376 Pin Configuration Package1) SOT-143 o- KJ- o

BAS28

Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

BAS28

Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

marking CODE JTS

Abstract: BAS28
Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

marking JTs

Abstract: BAS28 BAS28W
Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

SI5435BDC

Abstract: Si5435BDC-T1
Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code

Si5435BDC-T1

Abstract: SI5435BDC
Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code

SI5435BDC

Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code

SI5461EDC

Contextual Info: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 –20 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 1206-8 ChipFET S 1 D D D D D D G S Marking Code LA

Contextual Info: BAW56 Silicon Epitaxial Planar Diode F ast sw itc h in g d u al d io d e w ith c o m m o n anode. U.fl Top View Marking JD - - □ 1-N.I 1 Top View — + ; + S3 3.4 i 6 1 — a.45*0-1 SOT-23 Plastic Package W eig h t a p p ro x . 0 .0 0 8 g

Si5475DC

Abstract: S0233
Contextual Info: Si5475DC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.031 @ VGS = –4.5 V –7.6 0.041 @ VGS = –2.5 V –6.6 0.054 @ VGS = –1.8 V –5.8 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BF XX

Si5465EDC

Abstract: siliconix
Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code

Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW

Vishay DaTE CODE 1206-8

Abstract: 1206-8 1206 8 ChipFET Si5435DC
Contextual Info: Si5435DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V –5.6 0.080 @ VGS = –4.5 V –4.0 –30 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code

Si5402BDC

Contextual Info: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability

S0233

Abstract: Si5449DC S-02333
Contextual Info: Si5449DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –4.3 0.135 @ VGS = –2.5 V –3.4 –30 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BH XX Lot Traceability and Date Code

1206-8

Abstract: Si5402BDC
Contextual Info: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability

1206-8

Abstract: marking code AD Si5402BDC
Contextual Info: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability

Si5461EDC

Abstract: marking code LA
Contextual Info: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code

Si5433DC

Abstract: marking code BD
Contextual Info: Si5433DC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V –6.7 0.052 @ VGS = –2.5 V –5.9 0.072 @ VGS = –1.8 V –5.0 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code

Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW

Si5447DC

Abstract: 01563
Contextual Info: Si5447DC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.076 @ VGS = –4.5 V –4.8 0.110 @ VGS = –2.5 V –4.0 0.160 @ VGS = –1.8 V –3.3 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code

SI5402DC

Contextual Info: Si5402DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFET 1 D D D D D D G G Marking Code S AA XX Lot Traceability and Date Code S Part # Code