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SI5465EDC Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
Si5465EDC		Vishay Intertechnology	P-Channel 12-V (D-S) MOSFET	Original	PDF	51.52KB	5
SI5465EDC		Vishay Siliconix	MOSFETs	Original	PDF	110.12KB	5

SI5465EDC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
73005 Abstract: Si5465EDC Contextual Info: SPICE Device Model Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si5465edc 18-jul-08 73005	PDF
Si5465EDC Abstract: siliconix Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code	Original	si5465edc s-03912--rev 21-may-01 siliconix	PDF
Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW	Original	si5465edc s-03191--rev 12-mar-01	PDF
Si5465EDC Contextual Info: Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (Ω) ID (A) 0.037 @ VGS = -4.5 V -7.0 0.048 @ VGS = -2.5 V -6.1 0.065 @ VGS = -1.8 V -5.2 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LC XX Lot Traceability	Original	si5465edc si5465edc-t1 s-21251--rev 05-aug-02	PDF
Si5465EDC Abstract: 54kd Contextual Info: Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (Ω) ID (A) 0.037 @ VGS = -4.5 V -7.0 0.048 @ VGS = -2.5 V -6.1 0.065 @ VGS = -1.8 V -5.2 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LC XX Lot Traceability	Original	si5465edc si5465edc-t1 18-jul-08 54kd	PDF
1.6562 Abstract: 16562 4717 AN609 Si5465EDC Contextual Info: Si5465EDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si5465edc an609 20-jun-07 1.6562 +216562 4717	PDF
Contextual Info: Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (Ω) ID (A) 0.037 @ VGS = -4.5 V -7.0 0.048 @ VGS = -2.5 V -6.1 0.065 @ VGS = -1.8 V -5.2 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LC XX Lot Traceability	Original	si5465edc si5465edc-t1 08-apr-05	PDF
Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW	Original	si5465edc s-02662--rev 04-dec-00	PDF
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	si9165 si9169 600-ma tssop-20 +12msop-10 sip1759 gs 069 si5902dc spice device model tsop6 marking 312 sc89-6 si7705dn si7100dn si3865bdv si5947du si3861bdv 1212-8	PDF